1N3891R Search Results

Contextual Info: 1N3891/R asi SILICON POWER RECTIFIER- SWITCHING DESCRIPTION: The 1N3891/R is Designed for General Purpose Fast Switching Power Supply Applications. • 1N3891 = Cathode to Stud • 1N3891R = Anode to Stud MAXIMUM RATINGS 12 A @ T C= 100 °C lo 200 A Ifsm ONE CYCLE

Contextual Info: 1N3891/R SILICON POWER RECTIFIER- SWITCHING DESCRIPTION: PACKAGE STYLE DO- 4 The 1N3891/R is Designed for General Purpose Fast Switching Power Supply Applications. s Y M B L • 1N3891 = Cathode to Stud • 1N3891R = Anode to Stud 12 A @ Te = 100 0C 200 A

Westinghouse diode

Abstract: 1N3891 1N3891R SN16 VRM-50V
Contextual Info: WESTCÔDE S EMI CONDUCT ORS •ïTCmSS GGDSQbb b Technical Publication WESTCODE SEMICONDUCTORS 1N3889-93 Issue 1 February 1981 Fast Recovery Stud-Base Diode Type 1N3889-93 12 amperes average: up to 400 volts R A T IN G S Maximum values at Tj 150° C unless stated otherwise

tt 3043

Abstract: cp clare relay hg 1002 sol 4011 be 1N3888 clare mercury-wetted relay 1n3884 1N3890 clare mercury relay z037 1N3885
Contextual Info: MIL SPECS I C J Q C m a i H S OODBTOS 1 | MIL-S-19500/304B AMENDMENT 3 11 Auqust 1987 WOTSTDTfre-AMENDMENT 2 8 July 1985 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST-RECOVERY TYPES 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893,

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

CP CLARE hg 1004

Abstract: 1N3888 UNF-2B 01903 1N3886 clare mercury-wetted relay hgp1004 1n3880r 1N3884 diode 1n3893
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 November 1999. INCH-POUND MIL-PRF-19500/304D 15 August 1999 SUPERSEDING MIL-S-19500/304C 6 June 1989 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

FED-STD-H28

Abstract: 1N3890 1n3890 jan 1N3891 1N3893 1N3891A JANTX microsemi 1N3891R 1n3890a datasheet 1N3891/A 1N3890A
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY FAST RECOVERY RECTIFIER Qualified per MIL-PRF-19500/304 • 175°C Junction Temperature • 20 Amps Current Rating

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

W4DC105

Abstract: LP 8029 TR C458 w4dc162 W4DC132 NCT200 Thyristor w4dc162 w4dc162 pm W4DA250 w4da105
Contextual Info: Note: The data supplied in the enclosed tables is for general reference only. As data was collected from a number of sources, Richardson Electronics, Ltd. and its affiliates are not liable for its accuracy. Richardson Electronics, Ltd. and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Richardson Electronics makes no warranty, representation or guarantee regarding

1N3888

Abstract: 1N3886 1N3886 JANTX 1n3890 datasheet 1N3885 1N3890 1N3890R 1N3891 1N3891R 1N3893
Contextual Info: This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly different in format due to electronic conversion processes. Actual technical content will be the same. The documentation and process conversion measures

bd7995

Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Contextual Info: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154