1N483 Search Results

1N4830

Abstract: mpd200
Contextual Info: DIGITRON SEMICONDUCTORS 1N4156, 1N4157, 1N4453, 1N4829, 1N4830, 1N5179 MPD100 – MPD400A STABISTORS TIGHT TOLERANCE Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

1N483BUR

Abstract: CDLL483B LL483B
Contextual Info: FEATURES 1N483BUR • • • • • • 1N483BUR SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL483B, CDLL483B MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, sine, 8.3mS:

MT3018

Abstract: MT3013 MT3017 MT3019
Contextual Info: Stabistor Diodes Part Number MZ2360 MZ2361 1N4156 1N4157 1N4453 1N4829 1N4830 1N5179 MPD400 MPD400A MPD100 MPD200 MPD300 MPD100A MPD200A MPD300A MT3010 MT3011 MT3012 MT3013 MT3014 MT3015 MT3016 MT3017 MT3018 MT3019 MT3020 MT3021 Microsemi Division Scottsdale

MPD400

Abstract: MPD200
Contextual Info: 1N4156 1N4157 1N4453 1N4829 1N4830 1N5179 MPD200 MPD300 MPD400 STABISTOR DIODES High Speed, Multi-Pellet Computer and General Purpose DESCRIPTION Offering one to four d io d es in series, these devices are useful as signal lim iters, level shifters in transistor logic, m eter

1N483B

Abstract: 1N486B JANTX 1N486B D0204MB
Contextual Info: GENL IN S TR / 3ÖE POWER D • 3ÔT0137 QQOMMÔS ^ 1N483B THRU 1N486B LOW POWER MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Voltage - 70 to 225 Volts Current - 200 Milliamperes FEATURES D 0-204M B .023 0.61. .018(9.» LO (25.4 KIR. C7.6) ITS) HO(25.4)

1n4948 Silicon Instrument

Abstract: byw76 diodes RG3A General instrument 1n4948 byw76
Contextual Info: FAMILIES OF GENERAL INSTRUMENT GLASS PASSIVATED RECTIFIERS Glass Passivated Silicon Diodes 0.2 to 0.4 AMPERES Types: Features: 1N483B thru 1N486B 1N645 thru 1N649 ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Temperature Metallurgically Bonded High Efficiency and Rectification Radio

IC 7447 A

Abstract: 7447 spec sheet JAN1N486B JAN-TX1N486B JANTX1N486B
Contextual Info: Standard Recovery Rectifiers Part Number 1N662 JAN1N662 1N663 JAN1N663 MT5102 MT5103 MT5100 MT5101 MT5139 1N483 1N483A MT5140 1N485 1N3595-1 1N3595US 1N3595US-1 JAN1N3595-1 JAN1N3595US-1 JANS1N3595-1 JANTX1N3595-1 JANTX1N3595U JANTXV1N3595JANTXV1N3595 1N5194

1n485b

Contextual Info: DIODE 1N483B; JAN, JANTX 1N483B 1N485B; JAN, JANTX 1N485B General Purpose Low Current FEATURES DESCRIPTION • • • • This Series is useful in low current rectify­ ing applications for military, industrial and commercial equipment. Metallurgical Bond

Contextual Info: MICROSEMI CORP/ UATERTOIilN 5GE ]> ninnF • =1347^3 DD1S3S1 E lfl ■ UNIT 1N483B; JAN, JANTX 1N483B 1N485B; JAN, JANTX 1N485B l-r| v / L / t General Purpose Low Current FEATU RES • M e ta llu rg ica l Bond • Q u alified to MIL-S-19500/118 • P la n a r P assivated C h ip

1N483A Diode

Abstract: 1n483 diode 1N483 1N483A 1N483B
Contextual Info: FEATURES 1N483B • • • • • • 1N483B AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS 1N483 & 1N483A MAXIMUM RATINGS AT 25 °C Operating Temperature:

JAN1N486B

Abstract: JANTX 1N483B JAN-TX1N483B
Contextual Info: POWER SEMICONDUCTOR DIVISION iNstim JAN AND JANTX 1N483B THRU 1N486B LOW POWER MINIATURE GLASS PASSIVATED SILICON DIODES VOLTAGE 70 to 225 Volts CURRENT 200 Milliamperes - - T FEATURES 1.50 38.1 1 .0 0(25.4) Î .300 (7.6) .125(3.18) DIft .085 (2.1G) 1.50

IN483

Abstract: IN485 IN483B 1N483B 1N485B 1N486B IN485B IN486B
Contextual Info: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

1N435B

Abstract: 1N4838 1N4858 1N483B 1N485B 180VDC JANTX 1N483B
Contextual Info: DIODE JAN & JANTX 1N483B JAN &JANTX 1N435B General Purpose Low Current FEATURES • Metallurgical Bond • Qualified to MIL-S-19500/118 • Planar Passivated Chip • DO-7 Package DESCRIPTION T h is S e rie s is u seful in low current rectify­ ing a p p lic a tio n s for military, industrial and

GEX66

Abstract: OA71 OA81 D223A d223b OA73 OA79 OA85 ba153 OA70
Contextual Info: 'JaiïuX 45 Electronic V alves Z & I Aero Services Ltd London England 1972-73 Semi C o n d u c to rs Low Power Rectifiers and Detectors Type C V N a P.I.V. 1N34A 1N47 1N69 3934 1N81 2928 2923 1N198 ÌN 2 5 Ì 1N483 _ 1N914 60 115 60 155 Rect. Current mA 50

IN485B

Abstract: IN486B IN485 IN483B 1N483B 1N485B 1N486B
Contextual Info: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

1n4830

Abstract: LM390
Contextual Info: 1N4830 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N4830 Availability Online Store

n5195

Abstract: JAN1N486B
Contextual Info: 1N483B thru 1N486B and 1N5194 thru 1N5196 M ierosemi Corp. 1 The óiode experts , 71 SMISTA A N A CA F o r m o re in fo rm a tio n cali: 714 979-8220 GENERAL PURPOSE SILICON DIODES FEATURES • • • • • V oidless h e rm e tic a lly s ea led glass p a c k ag e (DO-35).

Contextual Info: 1N483B Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 80 V IF AV Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current

Contextual Info: 1N483B THRU 1N486B LOW POWER MINIATURE GLASS PASSIVATED SILICON RECTIFIER Voltage - 70 to 225 Volts Current 200 Milliamperes - FEATURES High temperature metallurgically bonded con­ structed rectifiers 0.2 Ampere oper^ ation at Ta = 25*C with no thermal runaway

1N4868

Abstract: lt 8220 1N483B1 1N4858 1N5194 JAN1N486B N5194 1N483B 1N485B 1N486B
Contextual Info: 1N483B-1N486B 1N51I94-1N5196 «¡erosemi Corp. GENERAL PURPOSE SILICON DIODES FEATURES • • • • Voidless hermetically sealed glass package. Triple layer passivation. Metallurgically bonded. TX types available per MIL-S-19500/118C. ABSOLUTE M A XIM U M RATING S

Contextual Info: 1N483B Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 80 V IF AV Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current

BZX75C2V1

Abstract: BZX75C1V4 1N3896 BZ102 BZX75-C3V6 BZX75C2V8 BZX75C 1N816 bzx75c3v6 STB568
Contextual Info: STABISTORS Part# 1N 8 16 1N3896 1N3897 1N3898 1N4829 1N4830 BZ102/0V7 BZ102/1V4 BZ102/2V1 BZ102/2V8 BZ102/3V4 BZX75C1V4 BZX75C2V1 BZX75C2V8 BZX75C3V6 Voltage Tolerance M a x . Leakage Current Test Current v„W 5% ±V l„«10V(m A) Mm») .704 .775 1.500

kpbc10

Abstract: diode 1N645 EFR135 DIODE 1N649 gp20 diode JTX1N4942 SMD zener diode 203 rectifier diode GP20 RGP10E D041
Contextual Info: 6ENL INSTR/ POüJER 2SE D • 7^9/~éC> 30^0137 G G Q 3 3 m T ■ Standard Silicon Rectifiers t II A PKG TYPE 0.2 0.4 D0204MB D0204MB 0041 n Îl II 0.5 0.5 0.8 1.0 MINI M ELF GL-34 MINI M ELF GL-34 D041 MPG06 I I I VRRM (volts) 50 1N483B GL34A BYM05-50 GP08A

RG3G

Abstract: D0204AP 1N647 RG3A D0-204AP 1N5559
Contextual Info: QUICK GUIDE TO GLASS PASSIVATED RECTIFIERS TYPE 1N483B thru 1N486B 1N645 thru 1N649 1N4245 thru 1N4249 1N4942* thru 1N4948' 1N5059 thru 1N5062 1N5614 thru 1N5622 CASE D0204MB DO204MB D0204AP D0204AP D0204AP D0204AP le A 02 04 1.0 10 1.0 1.0 1.0 1.0 1.0 I» (A)