BZ102 diode
Abstract: TRANSISTOR C 6090 BZX75C1V4 BZ102 BZX75C2V1 DIODE BZX75c3v6 BZX75C3V6 1N816 BZX75C-1V4 BZX75-C1V4
Contextual Info: AMERICAN POWER DEVICES SRE ». • 1N816 ,1 N3896, AP3897 - AP3898 AP4829 - AP4830, BZ102/0V7 - BZ102/3V4 BZX75C1V4 - BZX75C3V6, G129 - G130 STB-567 - STB-569, AP2360 - AP2361 american SEM ICO N D U C TO R S D73713S QQODOb? SSS ■ APD power devices, inc.
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d73713s1n8161n3896ap3897+14ap3898ap4829ap4830bz102/0v7bz102/3v4bzx75c1v4bz102 diodetransistor c 6090bz102bzx75c2v1diode bzx75c3v6bzx75c3v6bzx75c-1v4bzx75-c1v4
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BZX75C2V1
Abstract: BZX75C1V4 1N3896 BZ102 BZX75-C3V6 BZX75C2V8 BZX75C 1N816 bzx75c3v6 STB568
Contextual Info: STABISTORS Part# 1N 8 16 1N3896 1N3897 1N3898 1N4829 1N4830 BZ102/0V7 BZ102/1V4 BZ102/2V1 BZ102/2V8 BZ102/3V4 BZX75C1V4 BZX75C2V1 BZX75C2V8 BZX75C3V6 Voltage Tolerance M a x . Leakage Current Test Current v„W 5% ±V l„«10V(m A) Mm») .704 .775 1.500
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1n8161n38961n38971n3898+141n48291n4830bz102/0v7bz102/1v4bz102/2v1bz102/2v8bzx75c2v1bzx75c1v4bz102bzx75-c3v6bzx75c2v8bzx75cbzx75c3v6stb568
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BZX75C2V8
Abstract: 1N816 BZX75C2V1 bzx75c1v4 AP4157 BZX75-C2V1 STB568 AP4830 BZX75-C2V8 G129 stabistor
Contextual Info: ÖB FENUAL ELECTRONICS/APD 3Ef 3 S m S t B I ' r- ODD DT 2-1 1 il- * 1 STABISTORS DO-35 Case DO-35 Case Type 1N816 1N3896 AP3897 AP3898 AP4829 Stabistors are diffused silicon diodes with controlled forward voltage charac teristics. They are offered with reference
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do-35currentstb-569apd200apd300+12apd400ap4156bzx75c2v81n816bzx75c2v1bzx75c1v4ap4157bzx75-c2v1stb568ap4830bzx75-c2v8g129 stabistor
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bzx75c2v8
Abstract: BZX75C3V6
Contextual Info: 2SE D N AMER PHILIPS/DISCRETE • bb53T31 OOlbTbl =| ■ BZX75 SERIES STABISTORS Diodes with controlled conductance in a a ll-g la ss DO-7 regulation in circuits for clipping, coupling, clamping, and in many applications which require tight tolerances The se r ie s consists of 4 types with nominal voltages
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1N48 diode
Abstract: 1N4156 BZX75C1V4 BZX75C3V6 BZX75-C2V1 BZX75C-1V4 BZ102 diode 1N48 MPD200 1N816
Contextual Info: AMERICAN POWER 0737135 D DEVICES american SEMICONDUCTORS p o w e r devices, 4 .T «APD 1N4156,1N4157 1N4829,1N4830 1N5179 MPD200, MPD300, MPD400 inc. Stabistor diodes — high speed, multi-pellet, ultra low leakage FEATURES MAXIMUM RATINGS • • • •
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1n41561n41571n48291n4830+141n5179mpd200mpd300mpd400do-35400mw1n48 diodebzx75c1v4bzx75c3v6bzx75-c2v1bzx75c-1v4bz102 diode1n481n816
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PA0016
Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Contextual Info: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30
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14-dagarpa0016str11006so41p+7pioneer pa00167 segment to bcd converter 74c915saj14174hc145tms1122ic pa0016kor 2310 transistor
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BZX75C
Abstract: BZ102 diode 1n816 diode BZX75C1V4 G129 stabistor 1N816 BZX75-C2V1 AP2361 BZX75C-1V4 BZ102 1V4
Contextual Info: AMERICAN POWER DEVICES •73713S DODODSM S 23E D STABISTORS DO-35 Case DO-35 Case Type LEAD DIA NOT CONTROLLED THIS ZONE Voltage VR V 3d Stabistors are diffused silicon diodes with controlled forward voltage characteristics. They are offered with reference
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73713sdo-35800nsecbzx75c+9bz102 diode1n816 diodebzx75c1v4g129 stabistor1n816bzx75-c2v1ap2361bzx75c-1v4bz102 1v4
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BZX75C1V4
Abstract: BZX75-C2V1 BZX75-C1V4 BZX75C BZX75-G3V6 c2v1 BZX75/C1V4 BZX75-C2V8 BZX75-C3V6 BZX75C2V1
Contextual Info: 2SE D N AMER PHILIPS/DISCRETE • bbS3T31 GDlbTbl ^ ■ BZX75 S E R IE S r-u-za ST A B IST O R S Diodes with controlled conductance in a a ll-g lass DO-7 regulation in circuits for clipping, coupling, clamping, and in many applications which require tight tolerances
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bzx75bzx75c1v4bzx75-c2v1bzx75-c1v4+7bzx75cbzx75-g3v6c2v1bzx75/c1v4bzx75-c2v8bzx75-c3v6bzx75c2v1
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367
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