BZX75C2V1 Search Results

Contextual Info: BZX75C2V1 Diodes Forward Reference Diode If Max A I(FSM) Max.(A) Pk.Fwd.Sur.Cur.250m V(FM) Max.(V) Forward Voltage2.05 @I(FM) (A) (Test Condition)1.0m I(RM) Max.(A) Reverse Current500n @V(R) (V)(Test Condition)5.0 Semiconductor MaterialSilicon Package StyleDO-7

TDA8178FS

Abstract: BZX75C2V1 circuit integre resistencia zener 0.25W BZX75-C2V1 STV9379F Alla STV9379 BZX75C
Contextual Info: REPLACEMENT OF IC TDA8178FS CHASSIS : ICC7/ICC8 Eng. * remove IF01 and replace it with a STV9379F integrated ciruit. * Solder a 3.9KΩ 0.25W 5% Resistor between pins 2 and 7 of IF01. * Solder a Zener Diode BZX75C2V1 with anode at pin 7 of IF01 and cathode at the ground.

BZX75C2V1

Abstract: BZX75C1V4 1N3896 BZ102 BZX75-C3V6 BZX75C2V8 BZX75C 1N816 bzx75c3v6 STB568
Contextual Info: STABISTORS Part# 1N 8 16 1N3896 1N3897 1N3898 1N4829 1N4830 BZ102/0V7 BZ102/1V4 BZ102/2V1 BZ102/2V8 BZ102/3V4 BZX75C1V4 BZX75C2V1 BZX75C2V8 BZX75C3V6 Voltage Tolerance M a x . Leakage Current Test Current v„W 5% ±V l„«10V(m A) Mm») .704 .775 1.500

BZ102 diode

Abstract: TRANSISTOR C 6090 BZX75C1V4 BZ102 BZX75C2V1 DIODE BZX75c3v6 BZX75C3V6 1N816 BZX75C-1V4 BZX75-C1V4
Contextual Info: AMERICAN POWER DEVICES SRE ». • 1N816 ,1 N3896, AP3897 - AP3898 AP4829 - AP4830, BZ102/0V7 - BZ102/3V4 BZX75C1V4 - BZX75C3V6, G129 - G130 STB-567 - STB-569, AP2360 - AP2361 american SEM ICO N D U C TO R S D73713S QQODOb? SSS ■ APD power devices, inc.

BZX75C2V8

Abstract: 1N816 BZX75C2V1 bzx75c1v4 AP4157 BZX75-C2V1 STB568 AP4830 BZX75-C2V8 G129 stabistor
Contextual Info: ÖB FENUAL ELECTRONICS/APD 3Ef 3 S m S t B I ' r- ODD DT 2-1 1 il- * 1 STABISTORS DO-35 Case DO-35 Case Type 1N816 1N3896 AP3897 AP3898 AP4829 Stabistors are diffused silicon diodes with controlled forward voltage charac­ teristics. They are offered with reference

bzx75c2v8

Abstract: BZX75C3V6
Contextual Info: 2SE D N AMER PHILIPS/DISCRETE • bb53T31 OOlbTbl =| ■ BZX75 SERIES STABISTORS Diodes with controlled conductance in a a ll-g la ss DO-7 regulation in circuits for clipping, coupling, clamping, and in many applications which require tight tolerances The se r ie s consists of 4 types with nominal voltages

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

1N48 diode

Abstract: 1N4156 BZX75C1V4 BZX75C3V6 BZX75-C2V1 BZX75C-1V4 BZ102 diode 1N48 MPD200 1N816
Contextual Info: AMERICAN POWER 0737135 D DEVICES american SEMICONDUCTORS p o w e r devices, 4 .T «APD 1N4156,1N4157 1N4829,1N4830 1N5179 MPD200, MPD300, MPD400 inc. Stabistor diodes — high speed, multi-pellet, ultra low leakage FEATURES MAXIMUM RATINGS • • • •

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

BZX75C

Abstract: BZ102 diode 1n816 diode BZX75C1V4 G129 stabistor 1N816 BZX75-C2V1 AP2361 BZX75C-1V4 BZ102 1V4
Contextual Info: AMERICAN POWER DEVICES •73713S DODODSM S 23E D STABISTORS DO-35 Case DO-35 Case Type LEAD DIA NOT CONTROLLED THIS ZONE Voltage VR V 3d Stabistors are diffused silicon diodes with controlled forward voltage characteristics. They are offered with reference

BZX75C1V4

Abstract: BZX75-C2V1 BZX75-C1V4 BZX75C BZX75-G3V6 c2v1 BZX75/C1V4 BZX75-C2V8 BZX75-C3V6 BZX75C2V1
Contextual Info: 2SE D N AMER PHILIPS/DISCRETE • bbS3T31 GDlbTbl ^ ■ BZX75 S E R IE S r-u-za ST A B IST O R S Diodes with controlled conductance in a a ll-g lass DO-7 regulation in circuits for clipping, coupling, clamping, and in many applications which require tight tolerances

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154