1N4453 Search Results

1N4830

Abstract: mpd200
Contextual Info: DIGITRON SEMICONDUCTORS 1N4156, 1N4157, 1N4453, 1N4829, 1N4830, 1N5179 MPD100 – MPD400A STABISTORS TIGHT TOLERANCE Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MT3018

Abstract: MT3013 MT3017 MT3019
Contextual Info: Stabistor Diodes Part Number MZ2360 MZ2361 1N4156 1N4157 1N4453 1N4829 1N4830 1N5179 MPD400 MPD400A MPD100 MPD200 MPD300 MPD100A MPD200A MPD300A MT3010 MT3011 MT3012 MT3013 MT3014 MT3015 MT3016 MT3017 MT3018 MT3019 MT3020 MT3021 Microsemi Division Scottsdale

Contextual Info: MICROSEtll CORP/ WATERTOWN SDE D • cJ347cîb3 ODläata 511 ■ U N I T COMPUTER DIODE 1N4450J.N4451, 1N4453 Switching T -e J -a l FEATURES • Metallurgical Bond • Planar Passivated • DO-35 Package ABSOLUTE MAXIMUM RATINGS, AT 25'C 1N4450 1N4451 1N4453

Contextual Info: 1N4450, 1N4451, 1N4453 COMPUTER DIODE Switching ABSOLUTE MAXIMUM RATINGS, AT 25 °C FEATURES 1N4450 1N4451 1N4453 Peak Reverse Voltage. 4 0 V . 4 0 V . 3 0 V . Reverse Working Voltage. 3 0 V . 3 0 V . 2 0 V .

MPD400

Abstract: MPD200
Contextual Info: 1N4156 1N4157 1N4453 1N4829 1N4830 1N5179 MPD200 MPD300 MPD400 STABISTOR DIODES High Speed, Multi-Pellet Computer and General Purpose DESCRIPTION Offering one to four d io d es in series, these devices are useful as signal lim iters, level shifters in transistor logic, m eter

1N4453

Abstract: 1N4450 1N4451
Contextual Info: COMPUTER DIODE 1N4450, 1N4451, 1N4453 Switching FEATURES DESCRIPTION • M etallurgical Bond • Planar Passivated • DO-35 Package T his series offers M etallurgical Bonding and is very popular for general purpose sw itching applications. ABSO LUTE MAXIMUM RATINGS, AT 25 °C

C6042 transistor

Abstract: 1X4150 C6042 1N4829 lN4830 1N4156 1N4157 1N4453 1N4830 1N5179
Contextual Info: C O D I SE MI CO ND UC TOR INC ~TD 1775470 0D00S4L, 1 | l l i j _ CODI Semiconductor, Inc. Ml Silicon 1N4156,7 1N4453 1N4829,3Q 1N5179 C6042 C6043 C6044 Multi-pellet Diodes T hese CODI high speed m ulti-pellet diodes are fur use in com puter circuits and general purpose applications.

75V 150mA Diode

Contextual Info: COMPUTER DIODE 1c i r 150mA Switching Diode vy i" 1N4153, JAN, JANTX & JANTXV I N 4153 1N4534, JAN, JANTX & JANTXV 1N4534 FEATURES • • • • DESCRIPTION This device is particularly suited to applications where tightly controlled forward characteristics and fast recovery

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N4149

Abstract: 1N4150 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: CE 1N914 THRU 1N4454 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end

SS321

Abstract: SE708 D07 15 SS322 SS337 DT230A HPIXP2350ADT DZ800 MA1703 MA1704
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec) Package

SS321 equivalent

Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4

1N913

Abstract: 1N4156 1N4157 1N4453 1N4819 1N4829 1N5179 1N912A 1N913A C6044
Contextual Info: FORWARD REGULATOR Multi-Pellet DIODES ELECTRICAL CHARACTERISTICS @ 25 °C, unless otherwise stated Forward Voltage Minimum Breakdown Voltage at 5.0 uA at 25 'C Vt (Volte} V8* (Volts) I. (nA) s P il ï l ll Tabl e 10 10 1.0 5.0 1N912A Tabl e 11 10 1.0 5.0

Contextual Info: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature

bav20 itt

Abstract: BAV21 ITT WG713 1n4148 ITT 1N914 ITT BA201 BAV17 BAV18 BAV19 BAV20
Contextual Info: SILICON DIODES I T T Û7 SEMICONDUCTORS dË T | 4kf lHTSS 0a0S3Ht, 4 | ' G eneral Purpose and Sw itching Diodes in DO -35 Package Type Peak Inv. Voltage PIV Max. Aver. Rectified Current l0 Power Junction Dissipation Tempera­at25°C ture Tf Forward Voltage

WG713

Abstract: 1n4148 ITT ITT3002 1N914 ITT BA170 BA201 BAV17 BAV18 BAV19 BAV20
Contextual Info: SILICON DIODES I T T Û7 SEMICONDU CTORS dË T | 4^04^55 000232b 4 | ' General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver, Power Junction Rectified Dissipation Tempera­ Current l0 at25°C ture Tj Forward Voltage Drop Vf

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

1n4149

Abstract: 1N4153 silicon diodes 1N4151 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature

A114D

Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
Contextual Info: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)

1n829 noise

Abstract: 1N4828 codi C6301 1N5476B 1N457 JANTXV 1N5530B DO35 1N4830 diode ZENER A21 1N457
Contextual Info: C O U SEMICONDUCTOR INC SSE D • 1775M7Ü OODObS4 4 mCOVI it; ill * J Hi CODI Semiconductor, Inc. Serving the industry for over 2 5 years. CODI was born in 1959 as Computer Diode Corporation it's name was changed in 1973 to CODI CORPORATION . CODI Semiconductor, Inc. is CODI's operating arm. For

CECC 50001

Abstract: BAV21 CECC WG713 1N45BA 1N483A Diode BA170 BA201 BAV17 BAV18 BAV19
Contextual Info: General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Junction Forward Max. Aver, Power Rectified Dissipation Tempera­• Voltage ture Tf Current l0 at25°C Drop Vf Reverse Current lR at lF Reverse RecoveryTime atv„ Volts mA max.mW max.°C

1N4149

Abstract: 1N4151 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature

1N4149

Abstract: 1N4151 1N4152 1N4154 1N4447 1N4449 1N4450 1N4454
Contextual Info: 1N4149.1N4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching Max. 0.5 Max. 0.45 Min. 27.5 Max. 1.9 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand Black Cathode Band XXX Black Part No. Max. 3.9 ST XXX Max. 2.9 Min. 27.5

Contextual Info: •zSe.mi-Conducto'i tPioduati, fine. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 1N914THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features DO-35 Silicon Epitaxial Planar Diodes for general purpose and switching