197A02 Search Results

BUT35

Abstract: transistors but35 CM4050
Contextual Info: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS

2N6377

Abstract: 2N6378 2N6379 2N637
Contextual Info: MOTOROLA xstrs/ r sc 12E 0 § f b3b?2S4 Q0fi4b3fc. T | • f- 3 0 '2 3 2N6377 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N6379 HIGH-POWER PNP SILICON TRANSISTORS . . . designed for use in industrial-military power amplifier and switching circuit applications.

BUT35

Abstract: THT bsc 25 transistors but35 ASX 12 D transistor CM4050
Contextual Info: MO T O R O L A SC XST RS /R 12E D I b3b75S4 DDaMflbfl T | F MOTOROLA SEM ICON DUCTOR TECHNICAL DATA 40 AMPERES NPN SILICON POW ER DARLINGTON TRAN SISTO RS SW ITCHM ODE SER IES NPN SILICON POW ER DARLINGTON TRAN SISTO RS WITH BASE-EM ITTER SPEEDU P DIODE 1000 VOLTS

MTM45N15

Abstract: 05gw tj3b
Contextual Info: MOTORGLA SC X S T R S /R IM E D I F b 3 t>7 2 SM O C H O U l M1 1 T -3 7 -/S MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTM45N15 P o w e r Field E ffe c t T ra n s isto r N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FET 45 AMPERES

IR 92 0151

Abstract: MM5680 to204ae
Contextual Info: HOTOROLA SC XSTRS/R F ML E ^ 7 2 5 4 D 00*52507 b • MOTt,* p £ ? - Z t MOTOROLA SEMICONDUCTOR ■ TECHNICAL DATA Discrete Military Products PNP Silicon Sm all-Signal Transistor DM0 /I///// . . . designed for general-purpose switching and am plifier applications

NS 8002 1151

Abstract: TO-66 CASE
Contextual Info: M O T O R O L A SC XST RS/ R F EbE D b 3b 7E 5 4 G G m 4 3 4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M JM 3792 DM0 Discrete Military Products Suffixes: HX, H X V m in t PIMP Silicon Pow er Transistor Processed per MIL-S-19500/379 . designed for medium-speed switching and amplifier applications

245A-02

Contextual Info: MOTOROLA SC XSTRS/R F 2bE D h3b7254 O Q m M S Ö MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products PNP/NPN Silicon Complementary Power Darlington Transistors mo M JM 6052 111/111 (NPN) (PNP) M JM 6059 Suffixes: HX, H X V Processed per

Contextual Info: MOTORCLA SC XSTRS/R F MOTOROLA 12E O | t.3b7BSt OOttlfllS 1 | r.3i./s _ SEMICONDUCTOR TECHNICAL DATA 40 A M P E R E S SWITCHMODE* S E R IE S NPN SILICON POWER TRAN SISTOR NPN SILICON POWER M ETA L TRANSISTOR . designed for high speed, high current, high power and'low cost

1RFZ40

Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Contextual Info: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained

20N15

Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

MM3497

Abstract: AA146
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72S4 GD'iSM'î'i Q ■ MOTb 7^27-01 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MM3497 DM0 Discrete Military Products P N P S ilic o n Sm all-Sign al T ra n sisto r Suffixes: HX, HXV /////// Processed per MIL-S-19500/xxx . . . designed for general-purpose switching and amplifier applications

MD2484

Contextual Info: MOTOROLA SC XSTRS/R F HbE D • b3b?25M 00*12421, b ■ M O T b T ^ -iS MOTOROLA ■i SEMICONDUCTOR wmmÊÊmmmm TECHNICAL DATA ( MD2484F DM0 Discrete Military Products lllllll NPIM S ilic o n Dual/Q uad S m a ll-S ig n a l T ra n sisto rs (Duals) MHQ2484

Contextual Info: MOTOROLA SC XSTRS/R F 4bE D MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M D2905AF DM0 Discrete Military Products PIMP S ilic o n D u a l S m a ll-S ig n a l T ra n sisto r ) Suffixes: HX, H X V /////// Processed per MIL-S-19500/290 . designed for general-purpose switching and amplifier applications

mt 1389 de

Abstract: mt 1389 de ic NS 8002 1151 mt 1389 de motorola 2N3737 2N3735 TO-206AB
Contextual Info: MOTOROLA SC XSTRS/R F 5 ti E D L>3b72S4 QGTObSb 5 MOTOROLA S E M IC O N D U C T O R n TECHNICAL DATA T Suffixes: Ulflll IMPN Silicon Sm all-Sign al Transistors s -0 7 MM3735 MM3737 DM0 Discrete Military Products - ^ H, HX, H X V Processed per MIL-S-19500/395B

mjM6052

Contextual Info: M O T OR O L A SC XSTRS/R F 4bE » fe.3fc.72S4 O C H ^ T O MOTOROLA 4 • f 1 0 T b / z3 ? - 3 3 SEM ICONDUCTOR TECHNICAL DATA M JM 6052 Discrete Military Products (PNP) DM0 M JM 6059 (NPN) m an P N P /N P N S ilic o n C o m p le m e n ta ry P o w e r D a rlin g to n T ra n sisto rs

DIODE MOTOROLA 633

Abstract: NS 8002 1151 MQ6002I
Contextual Info: MOTOROLA SC XSTRS/R F *4bE D b3b?2S4 OO T E Mb B 1 I MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Discrete Military Products Power Field-Effect Transistor DM0 mini N-Channel Enhancement-Mode Silicon Gate TM OS, with Current Sensing Capability MHR35N06M Suffixes:

MD3799

Contextual Info: MOTOROLA SC X S T R S / R F b3fc>725M QG*i2M3a 2 • n O T b 'F H V Z S MOTOROLA SEMICONDUCTOR i TECHNICAL DATA ( Discrete Military Products DM0 lUfllf PNP Silicon Dual/Quad Sm all-Signal Transistors M D 3799 (Duals) M HQ 3799 M Q 3799 (Quads) Suffixes:

MTH15N20

Abstract: MTM15N20 H15N
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M T H 1 5N 2 0 M TM 15N 20 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS T These TM O S Pow er FETs are desig n ed fo r h ig h vo ltag e , high speed p o w e r sw itch in g a p p lica tio n s such as sw itch in g regulators,

MM2896

Abstract: To206AF bo140
Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b75S4 00^24^4 ^ 1 ■nOTb SEM ICONDUCTOR TECHNICAL DATA Discrete M ilitary Products MM2896 DM0 Suffixes: HX, HXV lllllll NPN Silicon Small-Signal Transistor Processed per MIL-S-19500/xxx . . . desig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap plications

MTM15N35

Abstract: 15N 50 mosfet 15N45
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N -C h ann el Enh an cem en t-M ode S ilic o n G ate T M O S T M O S P O W E R FETs 15 A M P E R E S These TM O S Pow er FETs are designed fo r high v o lta g e , high

mosfet IRF240

Abstract: IRF241 irf240 IRF243 power MOSFET IRF240
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF240 IRF241 IRF243 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S Power FETs are designed for low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid

NS 8002 1151

Contextual Info: MOTOROLA SC XSTRS/R F M OTOROLA _ 4bE J> • b 3 b ? 2 S l4 00=12471, T ■ r i 0 T b 7 r5 ^ / / S E M IC O N D U C T O R TECHNICAL DATA M H T 12N 10 Suffixes: Discrete M ilitary Products HX, HXV m in t P o w e r F ie ld -E ffe c t T r a n s is t o r Processed per

mrf544

Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • ( b3b?2SM QGR2S1S S ■MOTb MOTOROLA h SEMICONDUCTOR ■h h h h h h ih h TECHNICAL DATA Discrete M ilitary Products MRF544,A DM0 (NPN) MRF545,A (PNP) NPN/PNP Silicon /////I/ RF Com plem entry Transistors Suffixes: HX, HXV