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Amatom Electronic Hardware 8218-52-N-0440-0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bisco Industries	8218-52-N-0440-0		183			1 - 10 - 100 - 1000 - 10000 -	Buy Now
YAGEO Corporation CC0603KRX7R9BB271 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50 V 270pF X7R 0603 10%
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TTI	CC0603KRX7R9BB271	Reel	596,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.00	Buy Now
Vishay Intertechnologies CRCW120649R9FKEAC Thick Film Resistors - SMD 1/4Watt 49.9ohms 1% Commercial Use
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TTI	CRCW120649R9FKEAC	Reel	500,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
TAIYO YUDEN UMK325BJ106KM-P Multilayer Ceramic Capacitors MLCC - SMD/SMT 963-MSASU32MSB5106KP RPLCMT PN 50V 10uF X5R 1210 10%
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TTI	UMK325BJ106KM-P	Reel	371,000		1,000	1 - 10 - 100 - 1000 $0.13 10000 $0.12	Buy Now
Murata Manufacturing Co Ltd GRM1555C1H151FA01D Multilayer Ceramic Capacitors MLCC - SMD/SMT 150 pF 50 VDC 1% 0402 C0G (NP0)
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TTI	GRM1555C1H151FA01D	Reel	70,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now

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1852N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
VDAC-1850 Abstract: black 6 pin chip VDAC1850 VDAC1852 side braze ceramic dip analog device vdac1852n VDAC1850N 37552 Contextual Info: ç c ADVANCED ANALOG A Division of intech VDAC1850/1852 8-BIT, 80MHz VIDEO DAC DESCRIPTION T h e V D A C 1 8 5 0 and V D A C 1 85 2 are m o n o lith ic v id e o speed d ig ita l-to -a n a lo g c o n v e rte rs w ith 8 -b it re s o lu tio n . T h e y c o n ta in la tc h e s fo r in p u t d ata and	OCR Scan	VDAC1850 VDAC1852 VDAC1852J/B VDAC-1850 black 6 pin chip side braze ceramic dip analog device vdac1852n VDAC1850N 37552	PDF
cxa1851n Abstract: 1744R 20PIN Contextual Info: CXA1851N Up/Down Converter for 900 MHz-Band Mobile Communications For the availability of this product, please contact the sales office. Description 20 pin SSOP Plastic The CXA1851N is an up/down converter IC for 900 MHz-band mobile communications. This is suitable for 900 MHz-band digital cordless	Original	CXA1851N CXA1851N 20-pin 20PIN SSOP-20P-L072 SSOP020-P-0225-BN 1744R	PDF
HXNV0100 Contextual Info: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109	Original	HXNV0100 1x106 1x109 1x1012 1x10-10 1x1014 1x1015 N61-0995-000-000	PDF
Contextual Info: PRELIMINARY HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On n 150 nm Process Leff = 130 nm n Total Dose Hardness n Dose Rate Upset Hardness ≥ 1x109 rad(Si)/s Dose Rate Survivability ≥ 1x1012 rad(Si)/s	Original	HXNV01600 1x106 1x109 1x1012 1x10-10 1x1014 1x1015	PDF
1852N Abstract: 1852J Contextual Info: <T6 ADVANCED ANALOG A Division of intech VDAC1850/1852 8-BIT, 80MHz VIDEO DAC DESCRIPTION T h e V D A C 1 8 5 0 a nd V D A C 1 85 2 are m o n o lith ic v id e o speed d ig ita l-to -a n a lo g c o n v e rte rs w ith 8 -b it re s o lu tio n . T h e y c o n ta in la tc h e s fo r in p u t d a ta and	OCR Scan	VDAC1850/1852 MIL-STD-1772 1852N 1852J	PDF
CXA1852N Abstract: cxa pll 1744R 20PIN L072 1852N Contextual Info: 1852N Quadrature Modulator for 900 MHz-Band Mobile Communications For the availability of this product, please contact the sales office. Description The 1852N is an IC package that combines a π/2 phase shifter with a quadrature modulator. This is suitable for 900 MHz digital cordless	Original	CXA1852N CXA1852N 20-pin 20PIN SSOP-20P-L072 SSOP020-P-0225-BN cxa pll 1744R L072 1852N	PDF
VDAC1850 Abstract: VDAC-1850 VDAC1852 Contextual Info: cs ADVANCED ANALOG A Division of intech VDAC1850/1852 8-BIT, 80MHz VIDEO DAC DESCRIPTION The VDAC1850 and VDAC1852 are m o n o lith ic video speed d ig ita l-to -a n a lo g converters w ith 8-bit resolutio n. They co n ta in latches fo r in p u t data and	OCR Scan	VDAC1850 VDAC1852 VDAC1852J/B VDAC-1850	PDF
HXNV0100 Abstract: Tunneling Magnetoresistance mram HXVN0100 MIL-PRF38535 S150 Department of Defense honeywell mram Contextual Info: HXVN0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109	Original	HXVN0100 HXNV0100 1x106 1x109 1x1012 1x10-10 1x1014 1x1015 N61-0995-000-000 Tunneling Magnetoresistance mram HXVN0100 MIL-PRF38535 S150 Department of Defense honeywell mram	PDF