180N06 Search Results
180N06 Price and Stock
Infineon Technologies AG IPB180N06S4H1ATMA2MOSFET N-CH 60V 180A TO263-7 |
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IPB180N06S4H1ATMA2 | Digi-Reel | 5,567 | 1 |
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IPB180N06S4H1ATMA2 | Reel | 53 Weeks, 1 Days | 1,000 |
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IPB180N06S4H1ATMA2 | 3,277 |
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IPB180N06S4H1ATMA2 | 14 | 1 |
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IPB180N06S4H1ATMA2 | Cut Tape | 1,000 | 0 Weeks, 1 Days | 1 |
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IPB180N06S4H1ATMA2 | 10 Weeks | 1,000 |
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IPB180N06S4H1ATMA2 | 3,680 |
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Goford Semiconductor G180N06S2MOSFET 2N-CH 60V 8A 8SOP |
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G180N06S2 | Digi-Reel | 3,988 | 1 |
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IXYS Corporation IXFR180N06MOSFET N-CH 60V 180A ISOPLUS247 |
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IXFR180N06 | Tube | 30 |
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IXFR180N06 |
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Infineon Technologies AG IPB180N06S4H1ATMA1MOSFET N-CH 60V 180A TO263-7 |
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IPB180N06S4H1ATMA1 | Reel |
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IPB180N06S4H1ATMA1 | 14 | 1 |
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IPB180N06S4H1ATMA1 | 1,657 |
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Infineon Technologies AG IPB180N06S4H1ATMA2 (OPTIMOS T2)Mosfet, N-Ch, Aec-Q101, 60V, 180A, To263; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0013Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPB180N06S4H1ATMA2 |
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IPB180N06S4H1ATMA2 (OPTIMOS T2) | Cut Tape | 333 | 1 |
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180N06 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N06 IXFX 180N06 VDSS ID25 RDS on Single Die MOSFET = 60 V = 180 A = 5 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS |
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180N06 180N06 247TM O-264 | |
180N06Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N06 IXFX 180N06 VDSS ID25 RDS on Single Die MOSFET = 60 V = 180 A = 5 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS |
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180N06 180N06 247TM O-264 | |
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 180N06 Electrically Isolated Backside VDSS = 60 V ID25 = 180 A Ω RDS(on) = 5 mΩ têê ≤ 200ns kJ`Ü~ååÉä=båÜ~åÅÉãÉåí=jçÇÉ ^î~ä~åÅÜÉ=o~íÉÇI=eáÖÜ=ÇîLÇíI=içï=íêê mêÉäáãáå~êó=Ç~í~=ëÜÉÉí |
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ISOPLUS247TM 180N06 200ns | |
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 180N06 Electrically Isolated Backside VDSS = 60 V ID25 = 180 A Ω 5 mΩ RDS(on) = têê ≤ 200ns kJ`Ü~ååÉä=båÜ~åÅÉãÉåí=jçÇÉ ^î~ä~åÅÜÉ=o~íÉÇI=eáÖÜ=ÇîLÇíI=içï=íêê mêÉäáãáå~êó=Ç~í~=ëÜÉÉí |
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ISOPLUS247TM 180N06 200ns | |
isotop mosfet 180A 100V
Abstract: "Level Shifter" mosfet STPS80100TV ST62xx mosfet 600v power mosfet 600v MOSFET TO-220 2x60 600v
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12/24/48V L6353 STE250/180N06/10 STWxxNE10 STPS80100TV STTA6006TV 12006TV 60/100V, 250/180A O-247 isotop mosfet 180A 100V "Level Shifter" mosfet STPS80100TV ST62xx mosfet 600v power mosfet 600v MOSFET TO-220 2x60 600v | |
C1162
Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
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O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158 | |
C1146
Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
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O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 |