17APR01 Search Results

Si4927DY

Contextual Info: SPICE Device Model Si4927DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4450DY

Contextual Info: SPICE Device Model Si4450DY Vishay Siliconix N-Channel Enhancement-Mode MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si3434DV New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 2.5-V Rating for 30-V N-Channel D Low rDS(on) for Footprint Area PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.034 @ VGS = 4.5 V 6.1 APPLICATIONS 0.050 @ VGS = 2.5 V

cds photocell

Abstract: NORPS-12 QF-84
Contextual Info: Revision 1 2 Date 19-Oct-00 17-Apl-01 22-Sept-02 3 4 08-Feb-05 10-Sep-08 ECN 690 Revisions Description First release Color Temperature added Spectral response and R-on vs Ftc. Were added. Ftc to Lux conversion was added to output resistance curve Cap & Base changed

Si3434DV

Contextual Info: Si3434DV New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 2.5-V Rating for 30-V N-Channel D Low rDS(on) for Footprint Area PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.034 @ VGS = 4.5 V 6.1 APPLICATIONS 0.050 @ VGS = 2.5 V

Si4466DY

Contextual Info: SPICE Device Model Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3441DV

Abstract: 15nc15
Contextual Info: SPICE Device Model Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3443DV

Contextual Info: SPICE Device Model Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI2301DS

Abstract: si2301 Si2301DS SPICE Device Model SI2301DS* equivalent
Contextual Info: SPICE Device Model Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V Rated MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6925DQ

Contextual Info: SPICE Device Model Si6925DQ Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4412ADY

Contextual Info: SPICE Device Model Si4412ADY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4890DY

Contextual Info: SPICE Device Model Si4890DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4884DY

Contextual Info: SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3850DV

Abstract: Si3850DV SPICE Device Model
Contextual Info: SPICE Device Model Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4874DY

Abstract: 71469
Contextual Info: SPICE Device Model Si4874DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3443DV

Contextual Info: SPICE Device Model Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4416DY

Contextual Info: SPICE Device Model Si4416DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

OZ 9907

Abstract: 34146 MLAP 414586-4 GP-719
Contextual Info: — THIS DRAWING Is UNPUBLISHED.-RELEASED MR PUBLICATION-~ IC J COPYRIGHT - !- BY TYCO ELECTRONICS CORPORATION. REVISIONS LOC D is r HM 00 ALL RIGHTS RESERVED. P LTR L M

Si2308DS

Contextual Info: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4425DY

Abstract: v382
Contextual Info: SPICE Device Model Si4425DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3454ADV

Contextual Info: SPICE Device Model Si3454ADV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6965DQ

Abstract: 70919
Contextual Info: SPICE Device Model Si6965DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET, Common Drain CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si2315DS

Contextual Info: SPICE Device Model Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4880DY

Contextual Info: SPICE Device Model Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range