16APR01 Search Results

DG2002

Abstract: DG2002DL HP4192A SC70-6
Contextual Info: DG2002 New Product Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D Low Voltage Operation 1.8 V to 5.5 V Low On-Resistance - rDS(on): 7 W Fast Switching - tON : 8 ns, tOFF: 6 ns Low Charge Injection - QINJ: 5 pC

Si4810DY

Abstract: 70-911
Contextual Info: SPICE Device Model Si4810DY Vishay Siliconix N-Channel 30-V D-S MOSFET + Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5433DC

Contextual Info: SPICE Device Model Si5433DC Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6820DQ

Abstract: 16-Apr
Contextual Info: SPICE Device Model Si6820DQ Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET + Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6967DQ

Contextual Info: SPICE Device Model Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3430DV

Abstract: Si3430DV SPICE Device Model
Contextual Info: SPICE Device Model Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4840DY

Contextual Info: SPICE Device Model Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4430DY

Contextual Info: SPICE Device Model Si4430DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5853DC

Contextual Info: SPICE Device Model Si5853DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: 7 DRAWING MADE THIS DRAWING 6 5 15 UNPUBLI 5HED COPYRIGHT 19 R E LE A SE D BY AMP FOR P U B L I C A T I O N INCORPORATED. 2 3 4 77 IN THIRD ANGLE P RO J EC TI O N DI ST LOC 19 AJ ALL INTERNATIONAL RIGHTS RESERVED. REV I 5 I0N5 16 LTR ZO N E DE5 C R [ R T IO N

Si4864DY

Contextual Info: Si4864DY New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D Low 3.5-mW rDS(on) D PWM (Qgd and RG) Optimized PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0035 @ VGS = 4.5 V 25 0.0047 @ VGS = 2.5 V

Si7450DP

Contextual Info: Si7450DP New Product Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V 5.3 0.090 @ VGS = 6 V 5.0 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile

Contextual Info: 4 DRAWING THIS MADE IN THIRD DRAWING A NG L E IS 3 PROJECTION UNPUBLISHED COPYRIGHT 19 RELEASED BY ANP FOR 2 PUBLICATION INCORPORATED. ALL INTERNATIONAL LOC 19 RIGHTS AJ RESERVED. DI S T REV I 5 IONS 16 P F Z ONE LTR c DESCRIPTION 0B5 -2 PER 0 U 2 0 - 0 0 7 2 - 0 1

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR DESCRIPTION REV PER 0G 3H — 0 0 1 2 — 0 4 DATE DWN APVD 20JAN04 JR MS D D 1 30 1 ” C= • m ■ □

SUD35N05-26L

Contextual Info: SUD35N05-26L New Product Vishay Siliconix N-Channel 55-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 55 ID D TrenchFETr Power MOSFETS D 175_C Rated Maximum Junction Temperature D Low Input Capacitance (A)a 0.020 @ VGS = 10 V 35 APPLICATIONS

DG2002

Abstract: DG2002DL HP4192A SC70-6
Contextual Info: DG2002 New Product Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D Low Voltage Operation 1.8 V to 5.5 V Low On-Resistance - rDS(on): 7 W Fast Switching - tON : 8 ns, tOFF: 6 ns Low Charge Injection - QINJ: 5 pC

Si4812DY

Contextual Info: SPICE Device Model Si4812DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4484EY

Contextual Info: SPICE Device Model Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4896DY

Contextual Info: SPICE Device Model Si4896DY Vishay Siliconix N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4894DY

Contextual Info: SPICE Device Model Si4894DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6404DQ

Contextual Info: Si6404DQ New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 2.5-V Rated D 30-V VDS VDS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 11 APPLICATIONS 30 0.010 @ VGS = 4.5 V 10 0.014 @ VGS = 2.5 V 8.8 D Battery Switch

Si4854DY

Abstract: diode G1
Contextual Info: Si4854DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.026 @ VGS = 10 V 6.9 0.030 @ VGS = 4.5 V 6.4 0.041 @ VGS = 2.5 V 5.5 FEATURES D LITTLE FOOT Plust—Dual TrenchFETr Power MOSFET Plus Integrated Schottky

26 awg peak current

Abstract: 552967-2
Contextual Info: 501-140 Qualification Test Report 05Jan04 Rev A All Para Revised EC 0990-1788-03 AMP-BARREL* Terminals 1. INTRODUCTION 1.1. Purpose Testing was performed on AMP-BARREL* Terminals to determine their conformance to the requirements of Product Specification 108-6025, Revision F.

aj 312

Abstract: c246
Contextual Info: 4 DRAWING THIS MA D E IN THIRD DRAWING 2 ANGLE IS 3 UNP0BDI5HED. COPYRIGHT RE D E AS E D 19 BY AMP FOR PÜBDICATION INCORPORATED. ALL 2 <3> PROJECTION INTERNATIONAL RIGHTS DI ST L OC ,19 AJ RESERVED. 16 REV I 5 I 0 N5 P F Z O NE LTR DESCRIPTION E 0B5 - 1 3