SI7450DP Search Results

Contextual Info: Si7450DP Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.080 at VGS = 10 V 5.3 0.090 at VGS = 6 V 5 • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile

Contextual Info: Si7450DP Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.080 at VGS = 10 V 5.3 0.090 at VGS = 6 V 5 • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile

Si7450DP

Contextual Info: Si7450DP New Product Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V 5.3 0.090 @ VGS = 6 V 5.0 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile

Si7450DP-T1

Abstract: Si7450DP
Contextual Info: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V 5.3 0.090 @ VGS = 6 V 5.0 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching

Contextual Info: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 5.3 0.090 at VGS = 6 V 5.0 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®

Si7450DP

Abstract: Si7450DP-T1-E3 Si7450DP-T1-GE3
Contextual Info: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 5.3 0.090 at VGS = 6 V 5.0 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®

Si7450DP

Abstract: Si7450DP-T1 Si7450DP-T1-E3
Contextual Info: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.080 @ VGS = 10 V 5.3 0.090 @ VGS = 6 V 5.0 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile

Si7450DP

Contextual Info: \\\ SPICE Device Model Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

AN609

Abstract: Si7450DP
Contextual Info: Si7450DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V 5.3 0.090 @ VGS = 6 V 5.0 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching

Contextual Info: SPICE Device Model Si7450DP www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 5.3 0.090 at VGS = 6 V 5.0 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®

Si7450DP

Contextual Info: SPICE Device Model Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7450DP

Contextual Info: SPICE Device Model Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7450DP

Abstract: Si7450DP-T1-E3 Si7450DP-T1-GE3
Contextual Info: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 5.3 0.090 at VGS = 6 V 5.0 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®

Contextual Info: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.080 @ VGS = 10 V 5.3 0.090 @ VGS = 6 V 5.0 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile

SI7450DP

Contextual Info: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.080 @ VGS = 10 V 5.3 0.090 @ VGS = 6 V 5.0 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile

Contextual Info: LTC3706 Secondary-Side Synchronous Forward Controller with PolyPhase Capability DESCRIPTION FEATURES n n n n n n n n n n n n The LTC 3706 is a PolyPhase capable secondary-side controller for synchronous forward converters. When used in conjunction with the LTC3705 gate driver and primaryside controller, the part creates a complete isolated power

25CTQ45

Abstract: FET Drivers MAX5068 MAX5069
Contextual Info: 19-3175; Rev 1; 7/04 High-Frequency, Current-Mode PWM Controller with Accurate Oscillator and Dual FET Drivers The MAX5069 is a high-frequency, current-mode, pulse-width modulation PWM controller (with dual MOSFET drivers) that integrates all the building blocks

Contextual Info: LTC3810-5 60V Current Mode Synchronous Switching Regulator Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n High Voltage Operation: Up to 60V Large 1Ω Gate Drivers No Current Sense Resistor Required Dual N-Channel MOSFET Synchronous Drive Extremely Fast Transient Response

PA0815

Abstract: UPS Telecom IT HAT2165H FCX491A FDC2512 LTC3706 LTC3725 PA1294 Si7450DP ltc3705 transformer
Contextual Info: advertisement Isolated Converters Have Buck Simplicity and Performance Design Note 377 Kurk Mathews timing and optoisolator feedback to control the output secondary . The circuit shown in Figure 1 offers a more direct approach using fewer components. The LTC3706

LTC3810H-5

Abstract: gate drivers ic LTC3810-5 LTC3810E-5 LTC3810I-5 MBR1100 Si7450DP ZXMN10A07F LTC3810HUH-5 LTC3810
Contextual Info: LTC3810-5 60V Current Mode Synchronous Switching Regulator Controller Description Features High Voltage Operation: Up to 60V n Large 1Ω Gate Drivers n No Current Sense Resistor Required n Dual N-Channel MOSFET Synchronous Drive n Extremely Fast Transient Response

DRV_B

Abstract: LTC3723-2 opto coupler 817 LTC3723-1 pa1294.650 marking d26 diode SCHOTTKY half bridge self oscillating transformer LTC3722-2 voltage marking c32 push-pull zvs
Contextual Info: Final Electrical Specifications LTC3723-1/LTC3723-2 Synchronous Push-Pull PWM Controllers October 2003 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 3723-1/LTC3723-2 synchronous push-pull PWM controllers provide all of the control and protection functions necessary for compact and highly efficient, isolated

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller