Si5853DC |
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Vishay Intertechnology
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P-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
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PDF
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SI5853DC |
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Vishay Siliconix
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P-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
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Original |
PDF
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Si5853DC SPICE Device Model |
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Vishay
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P-Channel 1.8-V (G-S) MOSFET with Schottky Diode |
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Original |
PDF
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SI5853DC-T1 |
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Vishay Intertechnology
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P-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
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Original |
PDF
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SI5853DC-T1 |
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Vishay Siliconix
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MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.7A; On-Resistance, Rds(on):0.11ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-1206; Leaded Process Compatible:No |
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Original |
PDF
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SI5853DC-T1 |
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Vishay Siliconix
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P-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
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Original |
PDF
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SI5853DC-T1-E3 |
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Vishay Siliconix
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FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.7A 1206-8 |
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