SI2315DS Search Results

c5 marking code

Abstract: Si2315DS Si2315DS-T1
Contextual Info: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2315DS-T1 Top View

Si2315DS

Abstract: Si2315DS-T1
Contextual Info: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2315DS-T1 Top View

Si2315BDS-T1-E3

Abstract: Si2315BDS-T1 Si2315BDS Si2315DS Si2315DS-T1
Contextual Info: Specification Comparison Vishay Siliconix Si2315BDS vs. Si2315DS Description: P-Channel, 1.8 V G-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2315BDS-T1 Replaces Si2315DS-T1 Si2315BDS-T1-E3 (Lead (Pb)-free version) Replaces Si2315DS-T1

Contextual Info: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "3.5 0.075 @ VGS = –2.5 V "3 0.118 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2315DS (C5)* *Marking Code

Si2315DS

Contextual Info: SPICE Device Model Si2315DS P-Channel 1.25-W, 1.8-V G-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

vishay siliconix code marking

Abstract: C5 MARKING
Contextual Info: SÌ2315DS VISHAY Siliconix T P-Channel 1.25-W, 1.8-V G-S MOSFET New Product PRODUCT SUM M ARY r DS(on) (-2) I d (A) 0.055 @ VGS = —4.5 V ±3 .5 0.075 @ VGS = -2 .5 V ±3 0.118 @ VGS = —1.8 V ±2 V ds (V) -1 2 TO-236 (SOT-23) :-£ÿ Top View Si2315DS (C5)*

Contextual Info: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2315DS (C5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si2315DS

Contextual Info: Si2315DS Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET New Product PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "3.5 0.075 @ VGS = –2.5 V "3 0.118 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2315DS (C5)* *Marking Code

Si2315DS

Abstract: Si2315DS-T1
Contextual Info: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2315DS-T1 Top View

Si2315DS

Contextual Info: SPICE Device Model Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

LTN150XG-L05

Abstract: ZD600 c828* npn W316 bag c836 BA59-01664A 1608 F 100nF cpu fan sepa LTN150XG R756
Contextual Info: Main System Option SESC code Location 0902-001841 1105-001609 3903-000055 BA31-00025A BA31-00026A BA39-00527A BA39-00528A BA39-00533A BA39-00540A BA41-00568A BA41-00569A BA42-00161A BA42-00162A BA43-00155A BA44-00132A BA44-00162A BA44-00205A BA44-00209A BA44-00211A

DIODE 22B4

Abstract: BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4
Contextual Info: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision APPROVAL AQUILA MAIN BA92-01774A BA41-#####A SR 1.0 CHECK : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams

LEXAN 121r - 21051

Abstract: lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A
Contextual Info: 10. Electrical Partlist Option SEC Code Location Name Spec. Unit , PC -,-,0to+95C,560mA,-, HYS64T64020HDL,PC , DT,KR,CP3,IEC320 C5,250/250V,7/3A,BLK,1830mm,-,H05VV-F

AR5212

Abstract: ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516
Contextual Info: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X05 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)

ST T4 D560

Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom

LTN150XG-L05

Abstract: Al w29 LTN150XG LTN150XG-L05-V RC410M RC410MB HY60 BA41-00569a BA61-01045A BA39-00527A
Contextual Info: - This Document can not be used without Samsung's authorization - 6 6-1 78 MECHANICAL EXPLODED VIEW AND PARTLIST System Overall Exploded View SAMSUNG R45 - This Document can not be used without Samsung's authorization - 6 MECHANICAL EXPLODED VIEW AND PARTLIST

54B2

Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS

K0301

Abstract: b154ew02 BA81-01824A BA92-04308A BA68 BA59-01557A TM61 BA96-02838A BA44-00211A DAC-09N014
Contextual Info: This Document can not be used without Samsung’s authorization. 6. MECHANICAL EXPLODED VIEW AND PARTLIST 6-1 System Overall Exploded View K0007 I0003 K1001 K4001 K0001 K0002 K0102 K1002 K4002 K0101 K1003 K0201 L1007 K0101 T4001 T4002 I0006 I0001 W0101 B0004

wireless energy meter circuit diagram

Abstract: SZGD6060-PET solar cells circuit diagram 12 volt solar cell solar pv schematic photovoltaic cell 10V buck boost solar LTC4054LES5 photovoltaic cell LPR2400ERA
Contextual Info: A Solar Energy Harvester for Wireless Sensor Networks Application Note M1001 Solar provides an excellent source of energy for wireless systems that have no access to fixed power. Solar energy is abundant, present in all but the most northern-reaching climes and dependable for the foreseeable

SI2333DS-T1-E3

Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
Contextual Info: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)

n15 3KV SEC

Abstract: SIL1362 RA1156 schematic lcd inverter dell c840 dell D520 dell samsung y main hd50 d4.0 schematic D520 dell inverter C596A dell 1010
Contextual Info: 4 3 This Sheet of Engineering drawings and specifications contains Confidential, Trade Secret and other Proprietary information of Dell Computer Corporation "Dell" . This document may not be transferred or copied without the express written authorization of Dell.

BA41-00695A

Abstract: TP1274 CONN-50P-FPC Socket AM2 samsung 30 pin lvds diagram 25a44 SMD AC P27 CY28447 samsung electronics ba41 GND103
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

BA81-01580A

Abstract: BA81-01581A PA 66 GF 15 venice 6.2 BA41-00524A MIC2568 BA81 BA59-01318A WM3B2200BG BA41-00520A
Contextual Info: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 6. Expl oded Vi ew and PartLi st 6-1-1.Expl ode_Vi ew-Sorrento-Assy SAMSUNG X1 < 6 - 1 > Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 6. Expl oded Vi ew and PartLi st