SI3850DV Search Results
SI3850DV Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| Si3850DV | Unknown | Metal oxide N/P-channel field effect transistor enh. | Original | 73.49KB | 6 | ||
| Si3850DV | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| Si3850DV | Vishay Intertechnology | Complementary MOSFET Half-Bridge (N- and P- Channel) | Original | 49.24KB | 4 | ||
| SI3850DV | Vishay Telefunken | Si3850ADV vs. Si3850DV Comparison | Original | 62.98KB | 2 | ||
| Si3850DV SPICE Device Model | Vishay | Complementary MOSFET Half-Bridge (N- and P-Channel) | Original | 354.33KB | 4 | ||
| SI3850DV-T1 | Vishay Intertechnology | Complementary MOSFET Half-Bridge (N- and P- Channel) | Original | 49.24KB | 4 |
SI3850DV Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Si3850DV
Abstract: 4S2D
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Original |
si3850dvs-55457--rev09-mar-984s2d | |
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Contextual Info: Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = −4.5 V −0.85 1.30 @ VGS = −3.0 V |
Original |
si3850dvsi3850dv-t1si3850dv-t1--e308-apr-05 | |
Si3850DVContextual Info: SPICE Device Model Si3850DV Complementary MOSFET Half-Bridge N- and P- Channel Characteristics • N- and P- Channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range |
Original |
si3850dv | |
Si3580DV
Abstract: Si3850ADV Si3850DV Si3850DV-T1 si3580
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Original |
si3850advsi3850dvsi3850adv-t1-e3si3850dv-t1-e3+4 | |
Si3850DV-T1
Abstract: Si3850DV s2dg1
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Original |
si3850dvsi3850dv-t1si3850dv-t1--e318-jul-08+1 | |
Si3850DV
Abstract: Si3850DV-T1 S-50132
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Original |
si3850dvsi3850dv-t1si3850dv-t1--e3s-50132--rev+2 | |
Si3850DV
Abstract: Si3850DV SPICE Device Model
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Original |
si3850dv17-apr-01si3850dv spice device model | |
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Contextual Info: Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P Channel P-Channel - 20 rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = - 4.5 V - 0.85 1.30 @ VGS = - 3.0 V |
Original |
si3850dvsi3850dv-t1s-31725--rev18-aug-03 | |
50132Contextual Info: Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = −4.5 V −0.85 1.30 @ VGS = −3.0 V |
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si3850dvsi3850dv-t1si3850dv-t1--e308-apr-05+1 | |
71917
Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
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Original |
an607si9137ssop-28si9910+12 | |
mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
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Original |
2n7000irf7203fds9435a2n7002+14 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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Original |
5ke100a5ke100ca5ke10a5ke10ca+16 | |
VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
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Original |
si4831dysi4833dysi4852dysi4816dy+14 | |
Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
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2n70002n70022n7002e2n7002k+15 | |
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sud*50n025-06p
Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
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vsa-sg0019-0310sud*50n025-06psud70n03-04psi9120+7 | |