16K RAM Search Results

A12L

Abstract: A13L CY7C006 CY7C016 C0066
Contextual Info: with Sem, In t, Busy CY7C006 CY7C016 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 16K x 8 organization CY7C006 • 16K x 9 organization (CY7C016)

A13L

Abstract: CY7C09269A CY7C09369A IDT709269
Contextual Info: 1 CY7C09269A CY7C09369A 16K x16/18 Synchronous Dual Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • Two Flow-Through/Pipelined devices — 16K x 16/18 organization CY7C09269A/369A

Contextual Info: L7C167 16K x 1 Static RAM Features Description_ □ 16K by 1 Static RAM with separate I/O , Chip Select power down The L7C167 is a high-performance, low-power CMOS static Random Access Memory. The storage circuitry is organized as 16,384 words by 1 bit

UBL 025

Abstract: IDT709269 IDT709279 CY7C09269-12AI CY7C09279-12AI
Contextual Info: 025/0251 CY7C09269/79/89 CY7C09369/79/89 PRELIMINARY 16K/32K/64K x16/18 Synchronous Dual Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 6 Flow-Through/Pipelined devices — 16K x 16/18 organization CY7C09269/369

Contextual Info: L7C162 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION □ 16K x 4 Static RAM with Separate I /O and High Impedance Write The L7C162 is a high-performance, low-power CMOS static RAM. The storage cells are organized as 16,384 words by 4 bits per word. Data In and

Contextual Info: L 7 C 164/166 16K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns

Contextual Info: 16K X 32 CMOS DUAL-PORT STATIC RAM MODULE |d t / IDT7M1002 Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-density 512K CMOS Dual-Port RAM module • Fast access times The IDT7M 1002 is a 16K x 32 high-speed CM OS Dual-Port Static RAM Module constructed on a co-fired ceramic sub­

ST72E311

Abstract: ST72T311 ST72T311J2 ST72T311J4 TQFP44 TQFP64 sra 433 d1
Contextual Info: ST72E311 ST72T311 8-BIT MCU WITH 8 TO 16K OTP/EPROM, 384 TO 512 BYTES RAM, ADC, WDG, SCI, SPI AND 2 TIMERS DATASHEET • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ User Program Memory OTP/EPROM : 8 to 16K bytes Data RAM: 384 to 512 bytes including 256 bytes

Contextual Info: L 7C 164/166 16K x 4 Static RAM D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns

Contextual Info: Advance information •■ AS29LL800 II 2.2V 1Mx 8/512Kx 16 CMOS Flash EE PROM Features •O rganization: 1M x 8 / 5 1 2 K x 16 • Sector architecture - O ne 16K; tw o 8K; one 32K; and fifteen 64K byte sectors - O ne 8K; tw o 4K; one 16K; and fifteen 32K w o rd sectors

D425G

Abstract: ACT21 SN74BCT2166
Contextual Info: SN74BCT2163, SN74BCT2164, SN74BCT2166 16K x 5 CACHE ADDRESS COMPARATORS/TAG RAMs SCHS012-D3513, JUNE 1990-REVISED NOVEMBER 1991 SN74BCT2163, SN74BCT2164 Fast Address to MATCH Delay. 12 ns Max FM PACKAGE CTOP VIEW ’BCT2163 Has Totem-Pole Match Output Q\*~

SCAD002

Abstract: BCT2164
Contextual Info: SN74BCT2163, SN74BCT2164, SN74BCT2166 16K x 5 CACHE ADDRESS COMPARATORS/TAG RAMs _ D3513, JUNE 1990 — REVISED A U G U S T 1990 • Fast Address to MATCH Delay . . .12-ns Max • ’BCT2163 has Totem-Pole Match Output

FM24C16B

Abstract: FM24C16 FM24C16A FM24C16A-G FM24C16A-GTR FM24C16A-S EEPROM 256 bytes 24c
Contextual Info: FM24C16A 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1012 Read/Write Cycles • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

24CL16

Abstract: FM24C16 FM24CL16 FM24CL16-S
Contextual Info: Product Preview FM24CL16 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

A13L

Abstract: BY100 IDT70P9268L
Contextual Info: MOBILE MULTIMEDIA INTERFACE M2I Final VERY LOW POWER 1.8V Datasheet 16K X 16 IDT70P9268L SYNCHRONOUS DUAL-PORT STATIC RAM Features ◆ ◆ ◆ True Dual-Ported Memory Cells – Allows simultaneous access of the same memory location ◆ High per-port throughput performance

P4C188

Abstract: P4C188L
Contextual Info: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 22-Pin 300 mil DIP

FM24CL16BG

Abstract: FM24CL16B-G FM24CL16b R4L16B
Contextual Info: FM24CL16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1014 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

A12L

Abstract: A13L IDT70V3569 IDT70V3569S "Dual-Port RAM"
Contextual Info: HIGH-SPEED 3.3V 16K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 5/6ns max. Pipelined output mode

Contextual Info: CMOS DUAL-PORT RAM 3.3V, 16K 2Kx 8-BIT WITH INTERRUPTS Integrated Device Technology, Inc. PRELIMINARY IDT71V321S/L DESCRIPTION: FEATURES: • H igh-speed access The ID T71V 321 is a high-speed 2K x 8 Dual-Port Static RAMs with internal interrupt logic for interprocessor com ­

Contextual Info: ¿ggr-v w!y CMOS STATIC RAM 16K 4Kx 4-BIT CACHE-TAG RAM IDT6178S Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed Address to MATCH Valid time - Military: 12/15/20/25ns - Commercial: 10/12/15/20/25ns (max.) • High-speed Address Access time

2816 eeprom

Abstract: CI EEPROM 2816 DS1220Y-120 DS1220Y DS1220Y-100 DS1220Y-150 DS1220Y-200 2716 eprom
Contextual Info: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

IDT7132

Abstract: IDT7142 8M824
Contextual Info: IDT7132SA/LA IDT7142SA/LA CMOS DUAL-PORT RAM 16K 2K x 8-BIT Integrated Device Technology, Inc. FEATURES: • High-speed access — Military: 25/35/55/100ns (max.) — Commercial: 25/35/55/100ns (max.) — Commercial: 20ns only in PLCC for 7132 • Low-power operation

Z86E6116PSG

Abstract: Microprocessor z86 PQ-32/S-0212
Contextual Info: CMOS Z8 16K/32K EPROM MCUs Z86E61/Z86E63 Microcontrollers Product Specification PS014404-0212 Copyright 2012 Zilog , Inc. All rights reserved. www.zilog.com Z86E61/Z86E63 Microcontrollers Product Specification ii Warning: DO NOT USE THIS PRODUCT IN LIFE SUPPORT SYSTEMS.

Contextual Info: IDT7132SA/LA IDT7142SA/LA CMOS DUAL-PORT RAM 16K 2K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed access — Military: 25/30/35/45/55/70/90/100/120ns (max.) — Commercial: 20/25/30/35/45/55/70/90/100ns (max.) • Low-power operation