L7C162CC15 Search Results

Contextual Info: L7C162 16K x 4 Static RAM D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 16K x 4 Static RAM with Separate 1 /O and High Impedance Write □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation

Contextual Info: L7C162 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION □ 16K x 4 Static RAM with Separate I /O and High Impedance Write The L7C162 is a high-performance, low-power CMOS static RAM. The storage cells are organized as 16,384 words by 4 bits per word. Data In and

Contextual Info: L O G I C L 7 C 1 6 2 1 6 K x 4 Static RAM DEVICES INCORPORATED FEATURES ESCRIPTIQf □ 16K x 4 Static RAM with Separate I/O and High Impedance Write □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation

Contextual Info: L7C1R2 *- — • — - - L 7 C 1 G2 16K x 4 Static RAM JbVUI-S ■ : XJHHO -■AI h □ 16K x 4 Static RAM w ith Separate 1 / 0 and High Im pedance Write □ Auto-Powerdown Design □ A dvanced CMOS Technology □ H igh S p eed — to 12 n s m ax im u m

Elap 78

Contextual Info: L7C162 16K x 4 Static RA M DESCRIPTION □ 16K x 4 Static RAM w ith Separate I /O and H igh Im pedance W rite □ A uto-Pow erdow n Design □ A dvanced CMOS Technology □ High Speed — to 12 ns m axim um □ Low Pow er Operation Active: 325 m W typical at 25 ns

CONTACTOR

Contextual Info: L7C162 1 6 K x 4 S t a t ic R A M FEATURES □ 16K x 4 Static RAM w ith Separate I/O and H igh Im pedance Write □ A uto-Powerdown Design □ A dvanced CMOS Technology □ High Speed — to 12 ns m aximum □ Low Pow er O peration Active: 325 mW typical at 25 ns

Contextual Info: L7C162 16K x 4 Static R A M FEATURES □ 16K x 4 Static RAM with Separate I/O and High Impedance Write □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 [iW typical

CY7C162

Abstract: L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20
Contextual Info: L7C162 L7C162 DEVICES INCORPORATED 16K x 4 Static RAM 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Separate I/O and High Impedance Write q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: CY7C162 L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20
Contextual Info: L7C162 L7C162 DEVICES INCORPORATED 16K x 4 Static RAM 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Separate I/O and High Impedance Write q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: CY7C162 L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20
Contextual Info: L7C162 L7C162 DEVICES INCORPORATED 16K x 4 Static RAM 16K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION The L7C162 is a high-performance, low-power CMOS static RAM. The storage cells are organized as 16,384 words by 4 bits per word. Data In and Data Out are separate. This device is