L7C162 Search Results

Contextual Info: L7C162 16K x 4 Static RAM D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 16K x 4 Static RAM with Separate 1 /O and High Impedance Write □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation

Contextual Info: L7C162 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION □ 16K x 4 Static RAM with Separate I /O and High Impedance Write The L7C162 is a high-performance, low-power CMOS static RAM. The storage cells are organized as 16,384 words by 4 bits per word. Data In and

CY7C161

Contextual Info: LOGIC DEVICES INC SbE D • SSbS'lOS 0 0 0 1 0 3 0 b ÊÊ _ 16KX 4 Static RAM L 7 C 1 6 1 /1 6 2 DESCRIPTION □ 16K x 4 Static RAM with Separate I/O , Transparent Write L7C161 , or High Impedance Write (L7C162) □ Auto-Powerdown Design □ Advanced CMOS Technology

Contextual Info: L7C161/162 16Kx 4 Static RAM DESCRIPTION FEATURES □ 16K x 4 Static RAM with Separate I/O , Transparent Write L7C161 , or I ligh Im pedance Write (L7C162) U A uto-Pow erdow n D esign □ A dvan ced CM O S Technology □ High Speed — to 8 ns m axim um

Contextual Info: L7C162 1 6 K x 4 Static RAM DEVICES INCORPORATED FEATURES | DESCRIPTION □ 16K x 4 Static RAM with Separate I /O and High Im pedance W rite □ A uto-Pow erdow n Design □ A dvanced CMOS Technology □ H igh Speed — to 12 ns m axim um □ Low Pow er O peration

Elap 78

Contextual Info: L7C162 16K x 4 Static RA M DESCRIPTION □ 16K x 4 Static RAM w ith Separate I /O and H igh Im pedance W rite □ A uto-Pow erdow n Design □ A dvanced CMOS Technology □ High Speed — to 12 ns m axim um □ Low Pow er Operation Active: 325 m W typical at 25 ns

CONTACTOR

Contextual Info: L7C162 1 6 K x 4 S t a t ic R A M FEATURES □ 16K x 4 Static RAM w ith Separate I/O and H igh Im pedance Write □ A uto-Powerdown Design □ A dvanced CMOS Technology □ High Speed — to 12 ns m aximum □ Low Pow er O peration Active: 325 mW typical at 25 ns

Contextual Info: L7C162 16K x 4 Static R A M FEATURES □ 16K x 4 Static RAM with Separate I/O and High Impedance Write □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 [iW typical

Contextual Info: LOGIC DEVICES ^XNC IbE D •I SSh5T0S GOO.flSbb =1 ■ 16K x 4 Static RAM L7C 1 61/1 62 T - t t -23-/0 Features Description □ 16K by 4 Static RAM with separate I/O , transparent write L7C161 , or high impedance write (L7C162) The L7C161 and L7C162 are highperformance, low-power CMOS static

CY7C162

Abstract: L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20
Contextual Info: L7C162 L7C162 DEVICES INCORPORATED 16K x 4 Static RAM 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Separate I/O and High Impedance Write q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum

Contextual Info: 16K x 4 Static RAM FEATURES □ 16K x 4 Static RAM with Separate I/O , Transparent Write L7C161 , or High Impedance Write (L7C162) □ Auto-Powerdown Design □ Advanced CMOS Technology □ H ighspeed — to 8 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns

L7C162DC8

Abstract: L7C161PC35 L7C161 ma 8630 L7C161PC20 L7C161PC25 L7C161PC45 L7C161PC85 DM-85 L7C162DC2S
Contextual Info: L7C161/162 16K x 4 Static RAM Features Description □ 16K by 4 Static RAM w ith separate I/O , transparent w rite L7C161 , or h ig h im pedance w rite (L7C162) The L7C161 an d L7C162 are high­ performance, low -pow er CMOS static RAMs. The storage cells are organ­

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: CY7C162 L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20
Contextual Info: L7C162 L7C162 DEVICES INCORPORATED 16K x 4 Static RAM 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Separate I/O and High Impedance Write q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum

Contextual Info: L7C162 16K x 4 Static RAM D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 16K x 4 Static RAM with Separate 1/O and High Impedance Write □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: CY7C162 L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20
Contextual Info: L7C162 L7C162 DEVICES INCORPORATED 16K x 4 Static RAM 16K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION The L7C162 is a high-performance, low-power CMOS static RAM. The storage cells are organized as 16,384 words by 4 bits per word. Data In and Data Out are separate. This device is

L29C* 8 pin SMD

Abstract: 5962-88733 barrel shifter 32-bit 18 x 16 barrel shifter LF2246 LF2247 LF2249 LF2250 LF2272 LF3310
Contextual Info: DEVICES INCORPORATED DSP PRODUCTS PART NO. SPEED ns COM. MIL. PRODUCT DESCRIPTION PACKAGE AVAILABILITY VIDEO IMAGING PRODUCTS LF2242 12/16-bit Half-Band Digital Filter 25 — 44-lead PLCC/PQFP LF2246 LF2247 LF2249 11 x 10-bit Image Filter 11 x 10-bit Image Filter with Coefficient RAM

4Kx4

Contextual Info: Typical DC & AC Characteristics 1 6 K & 6 4 K Static RAMs The following Figures 1 through 8 represent typical DC and AC characteristic curves for the 16K and 64K static RAM products listed below: 16K Static R A M s 64K Static RA M s L7C167 L7C168 L7C170 L7C171

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

Contextual Info: L O G I C L 7 C 1 6 2 1 6 K x 4 Static RAM DEVICES INCORPORATED FEATURES ESCRIPTIQf □ 16K x 4 Static RAM with Separate I/O and High Impedance Write □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation

Contextual Info: L7C1R2 *- — • — - - L 7 C 1 G2 16K x 4 Static RAM JbVUI-S ■ : XJHHO -■AI h □ 16K x 4 Static RAM w ith Separate 1 / 0 and High Im pedance Write □ Auto-Powerdown Design □ A dvanced CMOS Technology □ H igh S p eed — to 12 n s m ax im u m

Package 48 LCC

Contextual Info: Static RAM Package Availability Guide Package Availability Code*2* Part No.O No. Pins Plastic DIP Sldebraze Hermetic DIP CerDIP SOIC Gull-Wing SOJ Plastic (J-Lead] LCC Ceramic LCC 16K Static RAMs K6 L7C167 20 P6 D7 C2 U3 W3 L7C168 20 P6 D7 C2 U3 W3 L7C170

tk1413

Abstract: 150KH 4920DY 1E25B
Contextual Info: Final E le c tric a l S p e c ific a tio n s LTC1625 H i m TECHNOLOGY No R s e n s e Current M ode Synchronous Step-Down Switching Regulator July 1998 DCSCMCTIOn FCflTURCS Highest Efficiency Current Mode Controller No Sense Resistor Required Stable High Current Operation