L7C166 Search Results

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: L7C164CC20 L7C164WC12 L7C164WC15 L7C164WC20
Contextual Info: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION ROW SELECT 8 O ROW ADDRESS CONTROL The L7C164 and L7C166 provide asynchronous unclocked operation with matching access and cycle times.

Contextual Info: L7C164/165/166 16K x 4 Static RAM DESCRIPTION FEATURES The L7C164, L7C165, and L7C166are high-performance, low -pow er CMOS static RAMs. The storage cells are organized as 16,384 w ords by 4 bits per w ord. Data In and Data Out signals share I/O pins. TheL7C164

Contextual Info: L O GI C D E V I CE S / INC IbE D SSbSTOS ODGBSSb b 16Kx 4 Static RAM L 7 C 1 6 4 / 1 6 5 / 1 6 6 T-V é -Z3-IO Features Description □ 16K by 4 Static RAM with common I/O The L7C164, L7C165, and L7C166 are high-performance, low-power CMOS static RAMs. The storage cells are

Contextual Info: LO GI C D E V I C E S INC EbE D • S S b S iO S O Q O C H T t - a ' B _ 4K x 4 Static RAM FEATURES □ 4K x 4 Static RAM with Common I/O, Output Enable L7C170 only □ Auto-Powerdown Design Q Advanced CMOS Technology □ Highspeed — to 8 ns maximum

Contextual Info: L7C164/166 16K x 4 Static R A M FEATURES DESCRIPTION □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 iW typical

s2ld

Abstract: MA 166s
Contextual Info: . i O <I!!H € •Hi L 7 C 16K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 8 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns

Contextual Info: L 7C 164/166 16K x 4 Static RAM D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns

Contextual Info: L 7 C 164/166 16K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns

L29C* 8 pin SMD

Abstract: 5962-88733 barrel shifter 32-bit 18 x 16 barrel shifter LF2246 LF2247 LF2249 LF2250 LF2272 LF3310
Contextual Info: DEVICES INCORPORATED DSP PRODUCTS PART NO. SPEED ns COM. MIL. PRODUCT DESCRIPTION PACKAGE AVAILABILITY VIDEO IMAGING PRODUCTS LF2242 12/16-bit Half-Band Digital Filter 25 — 44-lead PLCC/PQFP LF2246 LF2247 LF2249 11 x 10-bit Image Filter 11 x 10-bit Image Filter with Coefficient RAM

4Kx4

Contextual Info: Typical DC & AC Characteristics 1 6 K & 6 4 K Static RAMs The following Figures 1 through 8 represent typical DC and AC characteristic curves for the 16K and 64K static RAM products listed below: 16K Static R A M s 64K Static RA M s L7C167 L7C168 L7C170 L7C171

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: L7C164CC20 L7C164WC12 L7C164WC15 L7C164WC20
Contextual Info: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Common I/O q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum q Low Power Operation

pin diagram of ic 7495

Abstract: pin diagram of ic 7495 A ci 7495 Internal diagram of ic 7495 pin diagram of 7495 at7c165 oec 8043 c
Contextual Info: AT&T Advance Data Sheet A TT7C 164 A TT7C 165 A TT7C 166 High-Speed CMOS SRAM 64 Kbits 16K x 4 Common I/O Features • 16K by 4-bit static RAM with common I/O ■ Data retention at 2 V for battery backup operation ■ Automatic powerdown during long cycles

Package 48 LCC

Contextual Info: Static RAM Package Availability Guide Package Availability Code*2* Part No.O No. Pins Plastic DIP Sldebraze Hermetic DIP CerDIP SOIC Gull-Wing SOJ Plastic (J-Lead] LCC Ceramic LCC 16K Static RAMs K6 L7C167 20 P6 D7 C2 U3 W3 L7C168 20 P6 D7 C2 U3 W3 L7C170

Contextual Info: V 1' 16K x 4 Static RAM L 7 C 1 6 4 /1 6 5 /1 6 6 DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ Highspeed — to 8 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns

L7C164PC85

Abstract: L7C164PC25 8A720 ma 8630 L7C164PC35 L7C164PC45
Contextual Info: L7C164/165/166 16K x 4 Static RAM Features Description □ 16K by 4 Static RAM with common I/O □ Auto-Powerdown design □ Advanced CMOS technology □ High speed — to 20 ns worst-case □ Low Power Operation Active: 285 mW typical at 45 ns Standby: 50 xW typical

Contextual Info: L 7 C 1 6 4 /1 6 6 16K x 4 Static RAM □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 pW typical □ Data Retention at 2 V for Battery

Contextual Info: Data Sheet January 1992 ATT7C164 ATT7C165 ATT7C166 = s A T bT Microelectronics High-Speed CMOS SRAM 64 Kbit 16K x 4 Common I/O Features • High speed — 10 ns maximum access time ■ Automatic powerdown during long cycles ■ Advanced CMOS technology ■

ELAP CM 140

Contextual Info: •■■MB L 7 C 1 6 4 /1 6 6 mm 1 6 K x 4 Static RAM DEVICES INCORPORATED [ FEATURES DESCRIPTION □ 16K x 4 Static RAM w ith C om m on I/O □ A uto-Pow erdow n Design □ A dv an ced CM OS Technology □ H ig h Speed — to 12 ns m axim um □ L ow Pow er O peratio n

Contextual Info: 16K x 4 Static RAM L 7 C 1 6 4 /1 6 5 / 1 6 6 Features Description_ □ 16K by 4 Static RAM with common I/O Q Auto-Powerdown design □ Advanced CMOS technology □ High speed — to 20 ns worst-case □ Low Power Operation Active: 285 mW typical at 45 ns

ez619

Abstract: 55CCT 1ewd
Contextual Info: LOGIC DEVICES INC 2bE » • SStSIQS 0001052 7 ■ r - 16K x 4 Static RAM I FEATURES L 7 C 1 6 4 /1 6 5 /1 6 6 DESCRIPTION | □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown'04 Design □ Advanced CMOS Technology Q High Speed— to 8 ns maximum Q Low Power Operation

Contextual Info: L7C164/166 \}\v s DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 |iW typical □ Data Retention at 2 V for Battery

Contextual Info: L 16K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 |iW typical

L7C164PC20

Contextual Info: L 7 C 1 6 4 /1 6 6 16K x 4 Static RAM DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 12 ns maximum Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 yiW typical