L7C166KM Search Results

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: L7C164CC20 L7C164WC12 L7C164WC15 L7C164WC20
Contextual Info: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION ROW SELECT 8 O ROW ADDRESS CONTROL The L7C164 and L7C166 provide asynchronous unclocked operation with matching access and cycle times.

Contextual Info: L7C164/166 16K x 4 Static R A M FEATURES DESCRIPTION □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 iW typical

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Abstract: MA 166s
Contextual Info: . i O <I!!H € •Hi L 7 C 16K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 8 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns

Contextual Info: L 7C 164/166 16K x 4 Static RAM D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns

Contextual Info: L7C164/165/166 16K x 4 Static RAM DESCRIPTION FEATURES The L7C164, L7C165, and L7C166are high-performance, low -pow er CMOS static RAMs. The storage cells are organized as 16,384 w ords by 4 bits per w ord. Data In and Data Out signals share I/O pins. TheL7C164

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: L7C164CC20 L7C164WC12 L7C164WC15 L7C164WC20
Contextual Info: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Common I/O q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum q Low Power Operation

Contextual Info: L 7 C 1 6 4 /1 6 6 16K x 4 Static RAM FEATURES □ 16K x 4 Static RAM with Common I/O □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 12 ns maximum Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 [iW typical

Contextual Info: V 1' 16K x 4 Static RAM L 7 C 1 6 4 /1 6 5 /1 6 6 DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ Highspeed — to 8 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns

Contextual Info: L 7 C 1 6 4 /1 6 6 16K x 4 Static RAM □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 pW typical □ Data Retention at 2 V for Battery

ELAP CM 140

Contextual Info: •■■MB L 7 C 1 6 4 /1 6 6 mm 1 6 K x 4 Static RAM DEVICES INCORPORATED [ FEATURES DESCRIPTION □ 16K x 4 Static RAM w ith C om m on I/O □ A uto-Pow erdow n Design □ A dv an ced CM OS Technology □ H ig h Speed — to 12 ns m axim um □ L ow Pow er O peratio n

ez619

Abstract: 55CCT 1ewd
Contextual Info: LOGIC DEVICES INC 2bE » • SStSIQS 0001052 7 ■ r - 16K x 4 Static RAM I FEATURES L 7 C 1 6 4 /1 6 5 /1 6 6 DESCRIPTION | □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown'04 Design □ Advanced CMOS Technology Q High Speed— to 8 ns maximum Q Low Power Operation

Contextual Info: L7C164/166 \}\v s DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 |iW typical □ Data Retention at 2 V for Battery

L7C164PC20

Contextual Info: L 7 C 1 6 4 /1 6 6 16K x 4 Static RAM DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 12 ns maximum Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 yiW typical

L7C164CC20

Abstract: L7C164WC12 L7C164WC15 L7C164WC20
Contextual Info: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Common I/O q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum q Low Power Operation