1680M Search Results

NJG1142KA1

Abstract: HK1005
Contextual Info: NJG1142KA1 WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION The NJG1142KA1 is a wide band low noise amplifier GaAs MMIC designed for mobile TV application. And this amplifier can be tuned to wide frequency 170~1680MHz . The NJG1142KA1 has a LNA pass-through function to select high

Supervisory ICs

Abstract: MAX6832 MAX6833 MAX6834 MAX6835 MAX6836 MAX6837 MAX6838 MAX6839 MAX6840
Contextual Info: FIRST SC70 µP SUPERVISORY ICs TO MONITOR 1.2V WITHOUT EXTERNAL COMPONENTS Small Size, Low Power, and Low Thresholds are Ideal for Portable Equipment 6 FACTORY SET THRESHOLDS MONITOR 1.2V TO 1.8V SYSTEMS 5 RESET TIMING OPTIONS FROM 70µs TO 1680ms OR PUSH-PULL OR

Contextual Info: RFVC9753 RFVC9753Low Phase Noise Voltage Controlled Oscillator 1680MHz to 1740MHz LOW PHASE NOISE VOLTAGE CONTROLLED OSCILLATOR 1680MHz TO 1740MHz Package: MCM, 20-Pin, 6mm x 6mm Frequency and Power versus Voltage Control 1820 3.0 1800 -125dBc/Hz Typical at 100 kHz

Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 1680MHz Part No: MP02132 Model: TA0891A REV NO.: 2 A. MAXIMUM RATING: 1. Input Power Level: 10 dBm 2. DC Voltage : 3V

TA0891A

Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Model: TA0891A SAW Filter 1680MHz Part No: MP02132 REV NO.: 2 A. MAXIMUM RATING: 1. Input Power Level: 10 dBm 2. DC Voltage : 3V

TA1078A

Contextual Info: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 1680MHz Part No: MP03273 Model: TA1078A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 10dBm 2. DC Voltage: 3V

4G lte RF Transceiver

Abstract: RF transceiver LTE
Contextual Info: RFVC9753 RFVC9753Low Phase Noise Voltage Controlled Oscillator 1680MHz to 1740MHz LOW PHASE NOISE VOLTAGE CONTROLLED OSCILLATOR 1680MHz TO 1740MHz Package: MCM, 20-Pin, 6mm x 6mm Frequency and Power versus Voltage Control 1820 3.0 1800 POUT 0dBm Typical 

LT5560

Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT DC991A LOW POWER ACTIVE DOWN-CONVERTING MIXER LT5560 DESCRIPTION Demonstration circuit DC991A is optimized for a down-converting mixer tests & measurements for input frequency range of 700MHz to 1680MHz, an output frequency range of 110 MHz to 170MHz 12

SAWEN1G84

Abstract: SAFEB1G57 SAFEB942MFL0F00 SAFEB942 SAFEB1G57K SAFEB1G57KE0F00 SAFEB1G SAWEP1G84 SAFEB836MAL sawen942
Contextual Info: Filters for Communication Equipment for RF/Local Chip Multilayer LC Filters BPF o LFB18/21/2H/31_SG Series +0.2 +0.10 (2) 0.8 -0.1 (4) 0.15±0.10 (1) Attenuation (dB) (3) 0.15±0.10 0.45±0.15 0.70±0.15 (1)(3) : GND (2) : OUT (4) : IN LFB18_SG Series 10

GRM36

Abstract: HK1005 HK1608 NJG1714KC1 mix 3001
Contextual Info: NJG1714KC1 1.9GHz BAND FRONT-END GaAs MMIC •GENERAL DESCRIPTION NJG1714KC1 is a front-end GaAs MMIC including a LNA, a local amplifier and a mixer, designed mainly for 1.9GHz band cellular phone handsets. The external adjustment circuit is built into NJG1714KC1.

Si4450DY

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Contextual Info: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

nte 1037

Abstract: gt-48002a skip 24 evi 10 t3 "filtering database" GT-48001A GT-48002 S7256 0xF8000000
Contextual Info: GT-48002A Preliminary Rev. Revision 1.2 8/19/97 Switched Fast Ethernet Controller for 100BaseX Please contact Galileo Technology for possible updates before finalizing a design. FEATURES • Single-chip, low cost, Switched Fast Ethernet Controller - Provides packet switching functions between two

2502P

Abstract: CBHK741B019 F63TNR FDW2502P SI6926DQ
Contextual Info: SI6926DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

SI9955DY

Abstract: fairchild NDS 1182
Contextual Info: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: Si4420DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: Si9945DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: Si4412DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

2539a

Abstract: IC TRACE CODE ON BOX LABEL INFORMATION AA MARKING CODE SO8 marking code ng Fairchild TRACE CODE ON BOX PACKING LABEL
Contextual Info: FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • These MOSFETs feature faster switching and lower gate

AA MARKING CODE SO8

Contextual Info: FDS6680S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

CBVK741B019

Abstract: F011 F63TNR F852 FDS2570 FDS9953A L86Z
Contextual Info: FDS2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4A, 150 V.

CBVK741B019

Abstract: F63TNR FDG6302P FFB3906 FMB3906 MMPQ3906 SC70-6 SOIC-16 4977 gm
Contextual Info: E2 MMPQ3906 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.

FDS9953A

Abstract: 9953A CBVK741B019 F011 F63TNR F852 L86Z
Contextual Info: FDS9953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

FDD6672A

Abstract: 6680 MOSFET d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD6680
Contextual Info: FDD6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDW2501NZ

Abstract: 2501NZ DIODE marking S4 06 2502P CBHK741B019 F63TNR FDW2502P
Contextual Info: FDW2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate