13517 Search Results

1352702

Abstract: UL1953 UL508A
Contextual Info: UL Listed Power Distribution Blocks Specifications: Shown: 1351708 UL Listed and 1353702 with accessory cover (UL Recognized) • Safety hinged cover available (CH 1351), 1 cover per pole - p. 58 • UL Listed, Investigated to UL 1953, File QPQS.E309401

13517

Abstract: ul508a
Contextual Info: UL Listed Power Distribution Blocks Specifications: Shown: 1351708 UL Listed and 1353702 with accessory cover (UL Recognized) • Safety hinged cover available (CH 1351), 1 cover per pole - p. 58 • UL Listed, Investigated to UL 1953, File QPQS.E309401

Contextual Info: 12 11 10 8 SYMBOL DEFINITION MISSING SYMBOLS A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. H TOTAL NO OF INSPECTIONS REQUIRED LAST NO. USED (30o8ò) 13517349 - CONNECTOR

RA07M1317MS

Abstract: 135175MHz ra07m1317msa
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to

DFFC 0.5-1.0

Abstract: 1476 1567060000 B 1359 v 12719 1350710 138731-000 1283310
Contextual Info: Unimate Range - SLA/BLA The pin headers and socket blocks of the SLA/BLA product family will only mate as a pair, i.e. only pin headers and socket blocks of the same number of poles will connect together. This is not the only unique feature of this Weidmueller classic: We make this

RA30H1317M

Abstract: RA30H1317M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to

RD12MVP1

Abstract: RD12MVS1 2040D
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-VHF-034-B Date : 10th Feb. 2006 Rev. date : 22 th Jun. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 single-amplifier RF characteristics data at f=135-175MHz,Vdd=7.2V

RA30H1317M1

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M1 RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to

RA08H1317

Abstract: RA08H1317M RA08H1317M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08H1317 RA08H1317M 08H1317M RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module

RD07MUS2B

Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

RD07MUS2B

Abstract: RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-047-A Date : 15th Sep. ‘09 Rev. date : 22 th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=135-175 MHz,Vdd=7.2V

RA08N1317M

Abstract: RA08N1317M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz

RA07M1317M

Abstract: RA07M1317M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to

8C447

Contextual Info: PRODUCT INFORMATION 1300nm 8C447 1550nm PIN/Preamp Datacom, General Purpose, Analog Applications This device consists of a PIN photodiode and a transimpedance amplifier assembled in a TO-46 package. It is designed for short-distance FDDI and ATM up to 155 Mbps. The preamplifier’s linearity and absence of

RA60H1317M-101

Abstract: RA60H1317M RA60H1317M1
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to

PPE PA GF30

Abstract: PA66 GF 25 relay PA66 - GF 25 relay AMP PBT gf33 connector AMP PBT gf30 connector PBT PET GF30 DELPHI Connectors weather-pack pa6 gb gf30 obd II connector AMP PBT GF30 4 pin
Contextual Info: Global Connection Systems Catalog Table of Contents World Headquarters and Customer Center Mail Code 483.400.306 5725 Delphi Drive Troy, Michigan 48098-2815 U.S.A. Tel: [1] 248.813.2334 Fax: [1] 248.813.2333 Asia Pacific Regional Headquarters No. 60, Yuan Guo Road

MAX232 8pin configuration

Abstract: max232 interface pic pc RS232 MAX232 RX1M-151-5 DB9M NULL DATASHEET MAX232 TX1M-151-5 FM RADIO transmitter circuit diagram vhf fm transmitter
Contextual Info: W E N Radiometrix Hartcran House, 231 Kenton Lane, Harrow, HA3 8RP, England Issue 3, 19 October2007 Tel: +44 0 20 8909 9595, Fax: +44 (0) 20 8909 2233 TX1M/RX1M VHF Narrow Band Band FM multi channel radio Transmitter & Receiver UK Version: RX1M-173-5/TX1M-173-5 (10mW)

RD12MVP1

Abstract: RD12MVS1 mitsubishi 5218 5253 1007
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034-A Date : 10th Feb. 2006 Rev.date : 7th Jan. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 135-175MHz RF characteristics data

RA30H1317M1-201

Abstract: Mitsubishi GP730 RA30H1317M1
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M1 RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to

rf amplifier broad band

Abstract: RD06HVF1 AN-VHF-026-A
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-026-A Date : 22th Nov. 2004 Rev.date : 7th Jan. 2010 Prepared : K.Inaba Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD06HVF1 broad band characteristics for 135-175MHz

RD07MUS2B

Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor

RA07M1317MS

Abstract: RA07M1317MSA RA07M1317M-s RA07M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to

weidmuller 170125

Abstract: 160505 din 46228 25nm 161871 Weidmuller BLZ 5.00 H07V-K analoge schaltkreise 132166 BL35
Contextual Info: Steckverbindersysteme in metrischer Bauform Systemübersicht • BL 3.5/SL 3.5 Raster 3,5 mm Die Systeme zeichnen sich durch • BLZ 5.00/SL 5.00 (Raster 5,00 mm) • eine platzsparende Bauweise • BLZ 7.50/SL 7.50 (Raster 7,50 mm) • eine konische Drahteinführung

160455

Abstract: e 156176 163434 162585 Weidmuller BLZ 5.08 158134 163444 168802 ALNUP+161609 161573
Contextual Info: Produktinformation Leiterplattenverbinder LeiterplattenSteckverbinder-Systeme Inhalt Allgemeine Informationen Gesamtübersicht 3 Der schnelle Weg zum optimalen Leiterplatten-Steckverbinder 4 Leiterplatten-Steckverbinder – praxisgerecht, zukunftssicher, kompatibel