131-6 TRANSISTOR Search Results

NEC semiconductor

Abstract: NEC MARKING surface diode ir30 2ds223
Contextual Info: '$7$ 6+ 7 6,/,&21 75$16,6725 6' 131 6,/,&21 (3,7$;,$/ 75$16,6725 25 /2:)5(48(1&< 32:(5 $03/,),(56 PACKAGE DRAWING (UNIT: mm) The 2SD2230 is an element realizing ultra low VCE(sat). This transistor is ideal for muting such as stereo recorders, VCRs,

Contextual Info: '$7$ 6+ 7 COMPOUND TRANSISTOR %$/0 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU RU PLGVSHHG VZLWFKLQJ FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R = 4.7 kΩ, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: '$7$ 6+ 7 COMPOUND TRANSISTOR %$/0 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU RU PLGVSHHG VZLWFKLQJ FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R = 4.7 kΩ, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

CE1F3P

Abstract: D1617
Contextual Info: '$7$ 6+ 7 &203281' 75$16,6725 &( 3 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU )RU PLGVSHHG VZLWFKLQJ The CE1F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for

Contextual Info: SSE D N AMER PHILIPS/DISCRETE ^53=131 D0H025S 1 P o w e rM O S tra n s is to r B U K 4 2 6-80 0 A B U K 426-800B r - 3 1-// GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

CTX110602

Contextual Info: TOP VIEW 2.54 REF 4 PLCS RECOMMENDED PCB PAD LAYOUT 2.54 (4 PLCS) 3.0 REF PCB CUTOUT 21.0 MAX 1 10 2 3 10.16 REF 4 16.5 MAX 1.74 (7 PLCS) 6 5 0.584 SQ REF (7 PLCS) 8.42 16.6 11.9 21.0 28.7 26.0 MAX ELECTRICAL CHARACTERISTICS Turns ratio @ (10 - 2)/(2 - 1): 131 - 135

Contextual Info: N AMER P H I L I P S / D I S C R E T E ^ 53= 131 0 0 3 6 7 1 4 000 b ^ E 1> IAPX BFQ43 BFQ43S V.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors intended fo r use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. The transistors are resistance stabilized and guaranteed to w ith ­

74LS247

Abstract: 75492 TTL 74ls247 ttl 74141 9T TRANSISTOR 74LS248 MA5558 D135 D141 D143
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE I26 75492, 9664 124 9613 [14 □ 13 □ 12 □ 11 □ 10 □ 9 □ 8 □ 8 OUTPUT A □ Vcc □ OUT B 7 2 +IN A Q 3 -IN A ^ 4 GND 6 □ +IN B 5 □ -IN B 2 OUT D Vss OUT C OUT C IN C I27 I28 mA5SS 131 7528, 7529

CNX62

Abstract: BS415
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • ^53*131 GOHIOO? .1 ■ CNX62 r - 4 1 - g s HIGH-VO LTAGE O PTO CO U PLER T h e C N X 6 2 is an optocoupler consisting of an infrared emitting G aA s diode and a silicon npn phototransistor in a dual-in-line D IL plastic envelope. T h e base is not connected.

BSJ110

Abstract: BSJ109 BSJ108
Contextual Info: •I P h ilip .S e m ic o n d u c to r. R ^ ^53=131 □□53755 077 p H 1 L lp s/Jil^ RZ^ tra n sisto re 8 '1'0 0 " ' k 1' ’ ' 6" 60* FE A T U R E S p - . Q U IC K R E F E R E N C E DATA SYM BOL • Interchangeability of drain and source connections

Q62702-S565

Abstract: E6327 Q67000-S229 marking BSs marking SRs SOT SRs SOT23
Contextual Info: BSS 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 131 240 V 0.1 A 16 Ω SOT-23 SRs Type BSS 131 BSS 131 Ordering Code Q62702-S565

Contextual Info: AMER P H IL IP S /D IS C R E T E OLE D ^53=131 001SD0S a DhVtLUPM fcNI U A IA LV2931E50S This data sheet contains advance information and specifications are subject to change without notice. y v r 3 3 - 0 ? - MICROWAVE LINEAR POWER TRANSISTOR NPN silicon planar microwave power transistor intended for use in common-emitter class-A

transistor 131 8D

Abstract: transistor k 3728 QBE+61.2+dp2
Contextual Info: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran­

AD143

Abstract: ad148 ASZ1015 Germanium Power Devices
Contextual Info: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at Type Number ^ 1*0 V ^ CEO y Y ebo y max 32 32 32 - 64 64 64 80 80 50 50 50 32 40 40 40 55 22 22 22 55 80 40 32 32 50 50 50 35 26 26 30 30 32 32 100 100 100 A D Y 10 ADY11 A D Y 12 AD Y13 A D Y 20

Contextual Info: T IP I30, T IP I31, T IP I32 T IP I35, T IP I36, T IP I37 TIP130,131, 132 TIP135,136, 137 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons and Switching Applications DIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1,15

TIP137

Abstract: tip137 dlt TIP130 TIP131 TIP135
Contextual Info: TIP130, TIP131, TIPI 32 T IP I35, T IP I36, T IP I37 TIP130,131,132 TIP135,136,137 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons and Switching Applications _ 3 DIM A B C D e: F G H J K L M N MIN MAX 16,51 10.67 4.83 0.90 1.15

Contextual Info: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA

johanson trim

Contextual Info: MOTOROLA O rder this docum ent by M RF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N-Channel Enhancement-Mode MOSFET D e s ig n e d p rim a rily fo r w id e b a n d la r g e -s ig n a l o u tp u t an d d riv e r fro m

BF247A

Abstract: bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR
Contextual Info: Philips Semiconductors Small-signal Field-effect Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC07 1994 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 150 BS170 347 150

cr 406 transistor

Abstract: BUZ54
Contextual Info: PowerMOS transistor BUZ54 N AMER PHILIPS/DISCRETE — DhE D • ^ 5 3 ^ 3 1 0D14717 5 ■ “ T - $ cH 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

BUZ326

Contextual Info: N AMER PHILIPS/DISCRETE PowerMOS transistor OL.E D • ^53=131 O D l l47Sci T ■ BÜZ326 r - "’ 3 ^ -/3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUZ211

Contextual Info: _ PowerMOS transistor_ BUZ211 N AMER PHILIPS/DISCRETE DbE D • _ _SL OOlMbbfl 7 ■ T-si-13 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. FREDFET* with fast-recovery reverse diode.

BDX63

Contextual Info: N ANER PHILIPS/DISCRETE S5E D bbSETEl 0D111S7 b • BDX63; 63A BDX63B; 63C T - Z Z - W SIL IC O N DARLIN GTO N PO W ER T R A N S IS T O R S N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope, P-N-P complements are BDX62, BD X62A,

MRF951

Contextual Info: MOTOROLA Order this document by MMBR951ALT1/D SEMICONDUCTOR TECHNICAL DATA MMBR951 The RF Line NPN Silicon MRF951 Low Noise, High-Frequency MRF957 Transistors MRF9511 Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.