131-6 TRANSISTOR Search Results

NEC semiconductor

Abstract: NEC MARKING surface diode ir30 2ds223
Contextual Info: '$7$ 6+ 7 6,/,&21 75$16,6725 6' 131 6,/,&21 (3,7$;,$/ 75$16,6725 25 /2:)5(48(1&< 32:(5 $03/,),(56 PACKAGE DRAWING (UNIT: mm) The 2SD2230 is an element realizing ultra low VCE(sat). This transistor is ideal for muting such as stereo recorders, VCRs,

FL 210 transistor

Abstract: CTX210602
Contextual Info: TOP VIEW 2.54 REF 4 PLCS RECOMMENDED PCB PAD LAYOUT 2.54 (4 PLCS) 3.0 REF 21.0 MAX 1 10 2 3 10.16 REF 4 16.5 MAX 1.74 (7 PLCS) 6 5 0.584 SQ REF (7 PLCS) 8.42 11.9 21.0 28.7 26.0 MAX ELECTRICAL CHARACTERISTICS Turns ratio @ (10 - 2)/(3 - 2): 131 – 135 Turns ratio @ (10 - 2)/(2 - 1): 131 – 135

2SB1150

Abstract: D1317 2SB115
Contextual Info: '$7$ 6+ 7 6,/,&21 32:(5 75$16,6725 6' 131 6,/,&21 (3,7$;,$/ 75$16,6725 '$5/,1*721 &211(&7,21 25 /2:)5(48(1&< 32:(5 $03/,),(56 FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip Zener diode • High DC current gain due to Darlington connection • Large current capacity and low VCE(sat)

Contextual Info: '$7$ 6+ 7 COMPOUND TRANSISTOR %$/0 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU RU PLGVSHHG VZLWFKLQJ FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R = 4.7 kΩ, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: '$7$ 6+ 7 COMPOUND TRANSISTOR %$/0 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU RU PLGVSHHG VZLWFKLQJ FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R = 4.7 kΩ, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

CE1F3P

Abstract: D1617
Contextual Info: '$7$ 6+ 7 &203281' 75$16,6725 &( 3 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU )RU PLGVSHHG VZLWFKLQJ The CE1F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for

Siemens SRS 20

Contextual Info: SIEMENS SIPMOS Small-Signal Transistors BSS 101 BSS 131 VDS = 240 V /D = 0 .1 3 /0 .1 0 A ^DSIonl = 1 6 0 • N channel • Enhancement mode • Packages: TO-92, SOT-231 Type Marking Ordering code for version on bulk Ordering code for version in tap e2)

Contextual Info: SSE D N AMER PHILIPS/DISCRETE ^53=131 D0H025S 1 P o w e rM O S tra n s is to r B U K 4 2 6-80 0 A B U K 426-800B r - 3 1-// GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

CTX110602

Contextual Info: TOP VIEW 2.54 REF 4 PLCS RECOMMENDED PCB PAD LAYOUT 2.54 (4 PLCS) 3.0 REF PCB CUTOUT 21.0 MAX 1 10 2 3 10.16 REF 4 16.5 MAX 1.74 (7 PLCS) 6 5 0.584 SQ REF (7 PLCS) 8.42 16.6 11.9 21.0 28.7 26.0 MAX ELECTRICAL CHARACTERISTICS Turns ratio @ (10 - 2)/(2 - 1): 131 - 135

Ug 78A

Abstract: BUZ78 BUZ 78
Contextual Info: SIEM EN S SIPMOS Power MOS Transistor Vos lD = 800 V = 1 .5 A ^ D S o n = 8 BUZ 78 Q • N channel • E nhancem ent mode • Package: T O -2 2 0 A B 1) Type Ordering code BUZ 78 C 6 70 78-A 131 8-A2 Maximum Ratings Parameter Symbol Values Unit D rain-so urce voltage

Contextual Info: 4 3 D5 2 7 1 0053003 TFT • SI HARRIS HAS IRF130/ 131/ 132/133 IRF130R/1 31 R /132R /133R N -C hannel Power MOSFETs Avalanche Energy Rated* May 1992 Package Features TO-2Q4AA • 12A and 14A, 80V - 100V • rDS on = 0 .1 6 fi and 0 .2 3 ft SOURCE • Single Pulse Avalanche Energy Rated*

Contextual Info: N AMER P H I L I P S / D I S C R E T E ^ 53= 131 0 0 3 6 7 1 4 000 b ^ E 1> IAPX BFQ43 BFQ43S V.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors intended fo r use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. The transistors are resistance stabilized and guaranteed to w ith ­

74LS247

Abstract: 75492 TTL 74ls247 ttl 74141 9T TRANSISTOR 74LS248 MA5558 D135 D141 D143
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE I26 75492, 9664 124 9613 [14 □ 13 □ 12 □ 11 □ 10 □ 9 □ 8 □ 8 OUTPUT A □ Vcc □ OUT B 7 2 +IN A Q 3 -IN A ^ 4 GND 6 □ +IN B 5 □ -IN B 2 OUT D Vss OUT C OUT C IN C I27 I28 mA5SS 131 7528, 7529

CNX62

Abstract: BS415
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • ^53*131 GOHIOO? .1 ■ CNX62 r - 4 1 - g s HIGH-VO LTAGE O PTO CO U PLER T h e C N X 6 2 is an optocoupler consisting of an infrared emitting G aA s diode and a silicon npn phototransistor in a dual-in-line D IL plastic envelope. T h e base is not connected.

BSJ110

Abstract: BSJ109 BSJ108
Contextual Info: •I P h ilip .S e m ic o n d u c to r. R ^ ^53=131 □□53755 077 p H 1 L lp s/Jil^ RZ^ tra n sisto re 8 '1'0 0 " ' k 1' ’ ' 6" 60* FE A T U R E S p - . Q U IC K R E F E R E N C E DATA SYM BOL • Interchangeability of drain and source connections

16 sot 23

Abstract: BSS 130 marking SRs SOT E6327 Q62702-S565 Q67000-S229 marking BSs K3530
Contextual Info: BSS 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 131 240 V 0.1 A 16 Ω SOT-23 SRs Type BSS 131 BSS 131 Ordering Code Q62702-S565

Q62702-S565

Abstract: E6327 Q67000-S229 marking BSs marking SRs SOT SRs SOT23
Contextual Info: BSS 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 131 240 V 0.1 A 16 Ω SOT-23 SRs Type BSS 131 BSS 131 Ordering Code Q62702-S565

Siemens SRS 20

Abstract: marking BSs sot23 n1215 marking SRs SOT marking BSs sot23 siemens
Contextual Info: SIEMENS B S S 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 G Type BSS 131 Vbs 240 V b 0.1 A Type BSS 131 BSS 131 Ordering Code Q62702-S565 Q67000-S229 flDS(on) 16 Q Pin 3 S Package

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Contextual Info: BSS 131 Infine on technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 2 Pin 1 G Pin 3 S Type Vbs fc ffDS(on) Package Marking BSS 131 240 V 0.1 A 16Î2 SOT-23 SRs Type BSS 131 BSS 131

T1P137

Abstract: P131T
Contextual Info: TIP130>T,P131' T,P132 III 'W i y 'l l L TIP135, TIP136, T1P137 TIP130, 131, 132 TIP135, 136,137 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons and Switching Applications DIM A B C D E F G H JH _ J K L M i N MIN MAX 16,51 10.67

MMBR951L

Abstract: BR951L MRF951 mrf9511l
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF951 M M BR951L M RF9511L The RF Line NPN Silicon Low Noise, High-Frequency Transistors Iq = 100 mA LOW NOISE HIGH FREQUENCY TRANSISTORS . . . d e sig ned for u se in high gain, lo w n o ise sm all-signal am p lifiers. This series features

Contextual Info: AMER P H IL IP S /D IS C R E T E OLE D ^53=131 001SD0S a DhVtLUPM fcNI U A IA LV2931E50S This data sheet contains advance information and specifications are subject to change without notice. y v r 3 3 - 0 ? - MICROWAVE LINEAR POWER TRANSISTOR NPN silicon planar microwave power transistor intended for use in common-emitter class-A

MMBR951L

Abstract: MRF9511LT1 MRF951 sot-23 marking 7z NF 028
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF951 M M BR951LT1 M M BR951ALT1 M RF9511LT1 The RF Line NPN Silicon Low N oise, H igh-Frequency Transistors Iq = 100 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS . . . designed for use in high gain, low noise small-signal amplifiers. This series