MRF160 Search Results

MOTOROLA POWER 726 MOS FET TRANSISTOR

Abstract: Amp. mosfet 1000 watt VK20019-4B 108 motorola transistor mosfet 400 mhz MRF160 VK200 24906 MW8005
Contextual Info: MOTOROLA Order this document by MRF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc

ADC 50 Ghz

Abstract: MRF16030
Contextual Info: Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz

Contextual Info: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz

johanson trim

Contextual Info: MOTOROLA O rder this docum ent by M RF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N-Channel Enhancement-Mode MOSFET D e s ig n e d p rim a rily fo r w id e b a n d la r g e -s ig n a l o u tp u t an d d riv e r fro m

motorola sps transistor

Abstract: motorola 572 transistor Motorola 1600 395C-01 sps transistor
Contextual Info: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR

transistor 955 MOTOROLA

Abstract: MRF16006
Contextual Info: MOTOROLA Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR

Motorola Microwave power Transistor

Abstract: MRF16006 Transistor MRF16006
Contextual Info: MOTOROLA Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz

6 watts resistor

Abstract: MRF16006 motorola rf Power Transistor
Contextual Info: MOTOROLA Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz

MRF140

Abstract: mrf151g 300 blf245 MRF174 "cross-reference" motorola MRF150 04 150 MRF150 MRF157 SOT123 BLF546
Contextual Info: Version 1.0 Date: 2002-08-01 PHILIPS VDMOS Cross-Reference List UHF Philips Type VDMOS BLF548 Motorola Type TMOS MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 BLF542 MRF160 BLF404 BLF521 MRF158 BLF368 MRF141G BLF278 Motorola Philips

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Guaranteed 28 Volt, 500 MHz Performance

MRF16030

Contextual Info: MRF16030 The RF Line NPN Silicon Power Transistor 30W, 1.6GHz, 28V M/A-COM Products Released - Rev. 07.07 Product Image Designed for 28 V microwave large–signal, common base, Class C, CW amplifier applications in the range 1600 – 1640 MHz. • • •

MRF160

Abstract: VK200
Contextual Info: MOTOROLA Order this document by MRF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Guaranteed 28 Volt, 500 MHz Performance

MRF160

Abstract: VK200
Contextual Info: Order this document by MRF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Guaranteed 28 Volt, 500 MHz Performance

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large-signal, common base, Class-C CW amplifier applications in the range 1600 - 1640 MHz. • Specified 28 Volt, 1.6 GHz Class-C Characteristics

2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

Abstract: 2.4 ghz transmitter rf test equivalent transistor rf "30 mhz"
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR

2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

Abstract: 2.4 ghz transmitter rf test
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR

MRF160

Contextual Info: MRF160 POWE FIELD EFFECT TRANSISTOR PACKAGE STYLE .280 4L PILL DESCRIPTION: The MRF160 is an EnhancementMode N-Channel TMOS designed for wideband large-signal amplifier and oscillator applications to 500 MHz. MAXIMUM RATINGS ID 0.5 mA VDSS 65 V VGS ±40 V

MRF16006

Contextual Info: Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz

MRF16006

Contextual Info: MRF16006 The RF Line NPN Silicon Power Transistor 6.0W , 1.6GHz, 28V M/A-COM Products Released - Rev. 07.07 Product Image Designed for 28 V microwave large–signal, common base, Class C, CW amplifier applications in the range 1600 – 1640 MHz. • • •

transistors cross reference list

Abstract: MOTOROLA circuit for mrf150 CLASS AB mrf151g 300 MRF166W BLF246 MRF140 blf404 MRF177 Motorola transistors MRF158
Contextual Info: PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Philips Type UHF Motorola Type BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 MRF166C BLF542 MRF160 BLF404 BLF521 MRF158 VHF

TRANSISTOR motorola 838

Abstract: motorola diode 739 MRF16030 motorola rf Power Transistor Motorola 1600
Contextual Info: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz

motorola 547

Abstract: Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF160/D SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor MRF160 N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Guaranteed 28 Volt, 500 MHz Performance

MRF160

Abstract: RF MOSFET Driver ADVANCED POWER TECHNOLOGY EUROPE "RF MOSFET"
Contextual Info: MRF160 The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V M/A-COM Products Released - Rev. 07.07 Product Image Designed primarily for wideband large–signal output and driver from 30–500 MHz. N–Channel enhancement mode MOSFET • • • • •

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er Field E ffe c t Transistor N-€hannel Enhancement-Mode MOSFET MRF160 Designed primarily for wideband large-signal output and driver from 30-500 MHz. • Typical Performance at 400 MHz, 28 Vdc