D1617 Search Results

Contextual Info: Balun ] V ie w T y p e 6 [ D I M E N S I O N S ] U n it: m m < Top V iew > < Bottom & Side V iew > -3.2±0.2IN 4 O U T 1 /I 3 Pin No. n p v/m. wà. 1.6+ 0.2 0.68 0.46 _ r v 1 2 GND OUT2 0.25 0 .6 ± 0.05 N—►N1 0 .4 1 Part Nq EHF F D1615 EHF F D1617 EHF

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1L3N on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 10 kΩ) • Complementary transistor with BN1L3N ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: '$7$ 6+ 7 COMPOUND TRANSISTOR %$/0 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU RU PLGVSHHG VZLWFKLQJ FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R = 4.7 kΩ, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

C11531E

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

D1825

Abstract: d1833 AN-265 D1531
Contextual Info: APPLICATION NOTE AN-265 BUS MATCHING WITH IDT FIFOs BUS MATCHING The following diagrams show how an external byte-oriented bus should be mapped to the 9-bit oriented FIFO. The Bus Matching feature offered in the SuperSync II family is a powerful feature designed to eliminate external MUXes. When used in applications where

d1415

Contextual Info: MITSUBISHI LSIs MH64S72AVJG-5,-6 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AVJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.

MITSUBISHI LSIs SDRAM 32M

Abstract: MH32S72VJA-6
Contextual Info: MITSUBISHI LSIs MH32S72VJA-6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH32S72VJA is 33554432 - word x 72-bit Synchronous DRAM module. This consist of eighteen industry standard

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with BN1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

nec ap1l2q

Abstract: PA33
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AP1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching PACKAGE DRAWING UNIT: mm FEATURES • Current drive available up to 0.7 A • On-chip bias resistor • Low power consumption during drive

MA3560

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with BN1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

D1415

Abstract: MH64S72VJG-5
Contextual Info: MITSUBISHI LSIs MH64S72VJG-5,-6 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72VJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.

ce1a3q

Contextual Info: DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PA33

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

CE1F3P

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

D3031

Contextual Info: DP83265 PRELIMINARY National Semiconductor DP83265 BSI Device FDDI System Interface General Description Features The DP83265 BSI device implements an interface between the National FDDI BMACtm device and a host system. It provides a multi-frame, MAC-level interface to one or more

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1N4148 5t

Abstract: MP1305 u7a capacitor magnetic amplifier saturable core EER28 PKS607YN DI-148 TOPSWITCH 242 MP1305 transformer UA7815
Contextual Info: DI-148 Design Idea PeakSwitch Multiple Output Flyback Power Supply for Audio Amplifier Using Magnetic Amplifiers to Achieve Better Cross Regulation Application Device Power Output Input Voltage Output Voltage Topology Audio PKS607YN 75 W, 126 W Peak 195 - 265 VAC

nec ap1l2q

Abstract: PA33
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AP1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching PACKAGE DRAWING UNIT: mm FEATURES • Current drive available up to 0.7 A • On-chip bias resistor • Low power consumption during drive

D1833

Abstract: D1825 AN-265 q815 D916
Contextual Info: APPLICATION NOTE AN-265 BUS MATCHING WITH IDT FIFOs BUS MATCHING The following diagrams show how an external byte-oriented bus should be mapped to the 9-bit oriented FIFO. The Bus Matching feature offered in the SuperSync II family is a powerful feature designed to eliminate external MUXes. When used in applications where

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid