D1415 Search Results

d1415

Abstract: KTD1415 K D1415 DSA00105555
Contextual Info: SEMICONDUCTOR D1415 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K D1415 816 No. Item 1 KEC K KEC CORP. 2 Device Name D1415 D1415 3 hFE Grade 4 Lot No. 98.06.23 Revision No : Marking Description 8 Year

D1415A

Abstract: 2SD1415A d1415
Contextual Info: D1415A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ D1415A ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 3 V, IC = 3 A)

D1415A

Abstract: transistor D1415A 2SD1415A d1415
Contextual Info: D1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington D1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

NP34N055SLE

Abstract: NP34N055HLE NP34N055ILE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HLE, NP34N055ILE, NP34N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Tran- PART NUMBER sistors designed for high current switching applications.

NP32N055SHE

Abstract: NP32N055HHE NP32N055IHE d1415
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HHE, NP32N055IHE, NP32N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER Transistors designed for high current switching applications.

NP34N055SHE

Abstract: NP34N055HHE NP34N055IHE
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NP36N055SHE

Abstract: mp-3zk NP36N055HHE NP36N055IHE
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

27C101

Abstract: 27 eprom programmer schematic 511000 dram interfacing sram and dram 511000 A0-A21 HM511000 SH7032 Hitachi DSA00197 hitachi sh3 1995
Contextual Info: Hitachi Europe Ltd. ISSUE : APPS/64/1.0 APPLICATION NOTE DATE : 06/12/97 Interfacing High Speed SRAM/DRAM to the SH-1 Embedded Controller Introduction Memory Interfacing is a very important aspect of microprocessor based system design. Unfortunately, careful

NP36N055SHE

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

CNR-07D471K

Abstract: CNR-07D431K CNR14D151K CNR-14D621K CNR-14D151K varistor cnr 471k D431K CNR20d471k CNR-07D151K CNR-14D471K
Contextual Info: Metal Oxide Varistors Series Description Page CNR Part Numbering System D2 MOV Description D2 Selection Guide D3-7 Performance Characteristics Line Surge Protection D8-10 D11 Application Notes D12-13 Packaging D14-15 Tape Specifications D16 7267 Coldwater Canyon, North Hollywood. California 91605 • Phone 818 765-8300 • Toll Free (800) 827-7422 • Fax (818) 765-2387

D1415A

Abstract: 2SD1415A
Contextual Info: D1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington D1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

TNY275PN

Abstract: PLC810 PLC810PG TNY275PN equivalent 2MM5245B-7 D1415 transistor STTH8S06D schematic circuit diagram optocoupler, pfc LTV817A lcd tv power supply
Contextual Info: PLC810PG HiperPLC Family Continuous Mode PFC & LLC Controller with Integrated Half-bridge Drivers Product Highlights Features • Highly integrated, eliminates external components • Frequency and phase synchronized PFC and LLC • Reduced noise and EMI

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES

D-101-00

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE NP36N055HHE TO-251 NP36N055IHE TO-252

NP32N055HHE

Abstract: NP32N055IHE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HHE, NP32N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER PACKAGE NP32N055HHE TO-251 NP32N055IHE TO-252 Transistors designed for high current switching applications.

d1415

Contextual Info: MITSUBISHI LSIs MH64S72AVJG-5,-6 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AVJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.

MITSUBISHI LSIs SDRAM 32M

Abstract: MH32S72VJA-6
Contextual Info: MITSUBISHI LSIs MH32S72VJA-6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH32S72VJA is 33554432 - word x 72-bit Synchronous DRAM module. This consist of eighteen industry standard

raychem catalog termination kit and splicing kit

Abstract: Raychem installation procedure rcps-200-20 raychem AD-1377 M7928/1 MS25036 raychem AD-1377 calibration NAS1745 raychem AD-1377 drawings raychem termination kit and splicing kit RBK-ILS-processor
Contextual Info: Terminals and Splices Table of Contents How to Compute Circular Mil Area of Various Wire Shapes . . . . . . . . . . . . . . . . . . . . . . 9003 Terminal Stud Hole Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9004

d1415

Abstract: NP36N055HLE NP36N055ILE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES

NP36N055HHE

Abstract: NP36N055IHE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE NP36N055HHE TO-251 NP36N055IHE TO-252

D1415

Abstract: MH64S72VJG-5
Contextual Info: MITSUBISHI LSIs MH64S72VJG-5,-6 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72VJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.

d0415

Abstract: transistor D1303 D1309 D0902 D09-15
Contextual Info: Datasheet LED Drivers for LCD Backlights White LED Diver for Backlight of Medium/Large-sized LCDs BD9271KUT General Description BD9271KUT is a white LED diver used on backlight of Medium/Large-sized LCDs. This IC can achieve dimming function by SPI control. And through the SPI

MH32S72AQJA-7

Abstract: d1415
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32S72AQJA-7, -8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72AQJA is 33554432 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen

06090

Abstract: ansi-j-std-006 J-STD-004 J-STD-006 D-141-56 J-STD-004 SN63 rol1 d1415 OR22
Contextual Info: SPECIFICATION CONTROL DRAWING MATERIALS 1. INSULATION SLEEVE: Heat shrinkable, transparent blue, radiation cross-linked modified polyvinylidene fluoride. 2. SOLDER PREFORM WITH FLUX: SOLDER: TYPE Sn63 per ANSI J-STD-006. FLUX: TYPE ROL1 per ANSI J-STD-004.