NP32N055IHE Search Results

NP32N055SHE

Abstract: NP32N055HHE NP32N055IHE d1415
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HHE, NP32N055IHE, NP32N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER Transistors designed for high current switching applications.

NP32N055HHE

Abstract: NP32N055IHE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HHE, NP32N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER PACKAGE NP32N055HHE TO-251 NP32N055IHE TO-252 Transistors designed for high current switching applications.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HHE, NP32N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER PACKAGE NP32N055HHE TO-251 NP32N055IHE TO-252 Transistors designed for high current switching applications.

NP32N055HHE

Abstract: NP32N055IHE 44v6
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HHE, NP32N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Tran- PART NUMBER PACKAGE NP32N055HHE TO-251 MP-3 NP32N055IHE

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HHE, NP32N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER PACKAGE NP32N055HHE TO-251 NP32N055IHE TO-252 Transistors designed for high current switching applications.

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

TO-252 MOSFET p channel

Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE
Contextual Info: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering

NP32N055SHE

Abstract: NP32N055HHE NP32N055IHE
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

mc10087f1

Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Contextual Info: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.

TO-252 MOSFET p channel

Abstract: nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE
Contextual Info: Power house NP-Series Q3/2001 ● TJ, MAX = 175° C ● Ultra low On-Resistance RDS ON ● Low Gate-Charge ● Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive