12K1 Search Results

NF 034

Abstract: IGBT abb datasheets 12K1201
Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA1635-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1262 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1630-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage

Contextual Info: Data Sheet, Doc. No. 5SYA 1323-01 12 01 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage

76K1280

Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

ld33b

Abstract: LD45B RN66 25p80 LD12B
Contextual Info: 120K AP7331-ADJ R101 R102 22K 12K1 E5 C35 C31 C36 C37 10uF 100nF 100nF 100nF 100nF LD81B LD82B GP66 UP PULL DOWN GP66 T81 +1 2 3 4 5 6 7 8 GP32 GP34 GP36 GP38 SW51 GP33 GP35 GP37 GP39 VCC-3.3V _ GP32 GP34 GP36 GP38 VCC-3.3V CN51 GP33 GP35 GP37 GP39 _ VCC-3.3V

5SMX12K1701

Contextual Info: VRRM = IF = 1700 V 150 A Fast-Diode Die 5SLX 12K1711 Die size: 11.9 x 11.9 mm Doc. No. 5SYA1662-01 Feb. 05 • • • • Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol

12K12

Abstract: 5SLX12F1200
Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1273 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1633-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

12K1280

Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

IGBT abb datasheets

Abstract: 5SMX12K1701 abb 800
Contextual Info: VRRM = IF = 1700 V 150 A Fast-Diode Die 5SLX 12K1711 Die size: 11.9 x 11.9 mm Doc. No. 5SYA1662-01 July 04 • • • • Fast and soft reverse-recovery Low losses Rugged SOA safe operating area Passivation: SIPOS Nitride plus Polyimide Maximum rated values

Contextual Info: Data Sheet, Doc. No. 5SYA 1323-02 11 02 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage

Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1635-00 Mar 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 PRELIMINARY Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-01 Aug 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1274 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1303-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

Contextual Info: Data Sheet, Doc. No. 5SYA 1323-03 04 14 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-03 04 14 •     Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications

MP05288.01

Abstract: GPS 634R
Contextual Info: Thin Film Chip Resistor 0805 Features • • • • Thin Film NiCr resistance element Precision tolerance from ±0.1% Extremly low TCR from ±5 to ±50 PPM/°C Special packaging 1,000 pcs. / 2,000 pcs. per reel available Application Medical equipment

R1008-QB

Abstract: QFN 7X7 free circuit diagram of rf id MTTF bav99 12k1 r1008 5R62 BAV99 MMBT3904 MMBT3906
Contextual Info: 35.0-45.0 GHz GaAs Receiver QFN, 7x7 mm R1008-QB March 2007 - Rev 21-Mar-07 Features Sub-harmonic Receiver Integrated LNA, Image Reject Mixer, LO Doubler/Buffer +2.0 dBm LO Drive Level 8.0 dB Conversion Gain 4.0 dB NF +5.0 dBm Input Third Order Intercept IP3

Contextual Info: Low Power PCM Repeaters ANALOG DEVICES □ RPT-86/RPT-87 FEATURES • • • • • w ithT I 1,544Mbit/s , CEPT/E1 (2.048Mbit/s), and T1C (3.152Mbit/s) systems. Low Power Consumption (56mW) Single-Supply Operation Wide Data Rate Range <100kbit/s to >3Mbit/s

caller id converter dtmf to fsk

Abstract: V23 FSK Japan ring oscillator
Contextual Info: M ITEL Calling Number Identification Circuit Advance Information CNIC1.1 S E M IC O N D U C T O R Features • D S5035_ ISSUE 3_ N ovem ber 1998 1200 baud Bell 202 and CCITT V.23 Frequency Shift Keying (FSK) demodulation

BELLCORE FSK

Abstract: caller id converter dtmf DS5157 tda 1204
Contextual Info: CMOS MT88E43B Extended Voltage Calling Number Preliminary Information Identification Circuit 2 DS5157 Features • • • • • • • • • • • Compatible with: • British Telecom BT SIN227 & SIN242 • U.K.’s Cable Communications Association

MT88E43AS

Abstract: block diagram of ic 555 as fsk generator MT8841 bt
Contextual Info: CMOS MT88E43 Extended Voltage Calling Number Identification Circuit 2 Features • ISSUE 3 Compatible with: Ordering Information MT88E43AE 24 Pin Plastic DIP 0.6 inch package only MT88E43AS 24 Pin SOIC -40 °C to +85 °C • • • British Telecom (BT) SIN227 & SIN242

Arcol wirewound resistor

Abstract: TI002 Arcol HS50 NHS300 HS75 1K F hs50 100 1 TI005 TI006 HS300 ARCOL 19K36
Contextual Info: HEATSINK RANGE TECHNICAL INFORMATION LAST REVISED 01 NOV 2001 CONTENTS Critical Resistance TI002 Critical Resistance TI005 Critical Voltage TI002 Definition of Terms TI005 Derating Curve HS TI007 Electromagnetic Compatibility (EMC) TI009 Heatsink Selection

59012 h 331

Contextual Info: r to 61 41 65 45 = = = = 1% 1% 5% 5% Tol. Tol. Tol. Tol. on a miniReel in a miniBag on a miniReel in a miniBag Size Code 2 3 5 6 = = = = 0402 0603 0805 1206 Dimensions L x W : 7 = 1210 8 = 2010 9 = 2512 C ase Resistor value Code in £1 — { Use code from product chart)