5SLX12F1200 Search Results

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1262 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1630-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage

Contextual Info: 9& ,&  9  $ ,*%7'LH 60;. 'LH VL]H  [  PP ‡ ‡ ‡ Doc. No. 5SYA1608-01 Aug 02 /RZ ORVV WKLQ ,*%7 GLH +LJKO\ UXJJHG 637 GHVLJQ /DUJH IURQW ERQGDEOH DUHD 0D[LPXP 5DWHG 9DOXHV 3DUDPHWHU Collector-Emitter Voltage (Tj = 25°C, unless specified otherwise

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Abstract: 5SLX12F1200
Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1273 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1633-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 PRELIMINARY Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-01 Aug 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1274 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1303-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

Contextual Info: 9& ,&  9  $ ,*%7'LH 60; . 'LH VL]H  [  PP Doc. No. 5SYA 1617-02 July 03 • /RZ ORVV WKLQ ,*%7 GLH • +LJKO\ UXJJHG 637 GHVLJQ • /DUJH IURQW ERQGDEOH DUHD 0D[LPXP UDWHG YDOXHV  3DUDPHWHU Collector-emitter voltage 6\PERO &RQGLWLRQV

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-03 04 14 •     Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications