12K12 Search Results

NF 034

Abstract: IGBT abb datasheets 12K1201
Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA1635-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1262 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1630-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage

76K1280

Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

12K12

Abstract: 5SLX12F1200
Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1273 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1633-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

12K1280

Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1635-00 Mar 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 PRELIMINARY Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-01 Aug 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1274 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1303-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-03 04 14 •     Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications

59012 h 331

Contextual Info: r to 61 41 65 45 = = = = 1% 1% 5% 5% Tol. Tol. Tol. Tol. on a miniReel in a miniBag on a miniReel in a miniBag Size Code 2 3 5 6 = = = = 0402 0603 0805 1206 Dimensions L x W : 7 = 1210 8 = 2010 9 = 2512 C ase Resistor value Code in £1 — { Use code from product chart)

keytek

Abstract: 8K89 keytek MZ15
Contextual Info: ESD Protection: I/O Port Designers Look to Protect Against ESP Threats By Jon Schleisner Senior Applications Engineer ticated and expensive test equipment. In this case, the test Reliability has become an essential component of any with TPC-2 tip. The events were recorded with a Tektronics

keytek MZ15

Abstract: keytek RC SUPPRESSOR 20 kv 11K11
Contextual Info: Application Note Vishay Semiconductors ESD Protection: I/O Port Designers Look to Protect Against ESD Threats By Jon Schleisner Senior Applications Engineer Reliability has become an essential component of any communication and data management system. In some

12K1280

Contextual Info: VRRM = IF = 1200 V 100 A Diode-Die 5SLY 12G1200 Die size: 8.4 x 8.4 mm Doc. No. 5SYA 1683-01 Dez 12 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

Contextual Info: VRRM = IF = 1200 V 100 A Diode-Die 5SLY 12G1200 Die size: 8.4 x 8.4 mm Doc. No. 5SYA 1683-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

AD7240JN

Abstract: AD7240BQ AD589H AD589HL AD7240 AD7240AQ AD7240KN AD7240SD AD7244
Contextual Info: ANALOG DEVICES □ FEATURES Fast V oltage S ettling Tim e: 550ns to 0.01% Total U nadjusted Error: 1LSB m ax Single Supply Operation Latch U p Proof N o Protection Schottky Required Superb Differential Nonlinearity: 1/2LSB m ax over Tem perature Low P ow er Dissipation: 30m W

1.5K12,A,

Contextual Info: 6-Drawer mini Warehouse Assortment Kit InDevelopment 03*1996 Subject To Design Change! ' 300 items 54,000pcs. Total! Excellent for stores & labs One finger open & close lid Replaceable when depleted Ship Weight: 10 Kg 22 lbs. 2nd ( >ider \ u mhci s O rd e r#

AD7240JN

Abstract: AD7240BQ AD7240 AD7240AQ V1F diode AD7240KN AD7240SD AD589HL AD7244
Contextual Info: ANALOG DEVICES □ FEATURES Fast V oltage S ettling Tim e: 550ns to 0.01% Total U nadjusted Error: 1LSB m ax Single Supply Operation Latch U p Proof N o Protection Schottky Required Superb Differential Nonlinearity: 1/2LSB m ax over Tem perature Low P ow er Dissipation: 30m W