12K1721 Search Results
12K1721 Datasheets Context Search
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Contextual Info: Data Sheet, Doc. No. 5SYA 1323-01 12 01 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage |
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12K1721 CH-5600 | |
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Contextual Info: Data Sheet, Doc. No. 5SYA 1323-02 11 02 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage |
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12K1721 CH-5600 12K1721 | |
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Contextual Info: Data Sheet, Doc. No. 5SYA 1323-03 04 14 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage |
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12K1721 CH-5600 | |
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Contextual Info: Data Sheet, Doc. No. 5SYA 1689-03 04 14 5SLY 12G1700 Fast-Diode Die VRRM = 1700 V IF = 100 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage |
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12G1700 CH-5600 | |
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Contextual Info: Data Sheet, Doc. No. 5SYA 1689-02 11 05 5SLY 12G1700 Fast-Diode Die VRRM = 1700 V IF = 100 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage |
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12G1700 170lated CH-5600 | |
5SLY
Abstract: IGBT ultra fast
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12G1700 CH-5600 5SLY IGBT ultra fast |