12JUN06 Search Results

transistor dtc114

Abstract: DTC114 df3200 dtc123je ic dtc114 DTC114EE DTC114TE DTC114YE DTC123EE DTC124EE
Contextual Info: DTC114EE Series Bias Resistor Transistor NPN Silicon 3 P b Lead Pb -Free COLLECTOR 3 1 2 R1 1 BASE R2 SC-89 (SOT-523F) 2 EMITTER Maximum Ratings (TA=25°C unless otherwise noted) Rating Symbol VCEO VCBO Value 50 Unit V 50 V IC 100 mA Symbol Max Unit PD 200

TS53

Contextual Info: TS53Y Vishay Sfernice Surface Mount Miniature Trimmers Single-Turn Cermet Sealed FEATURES • 0.25 Watt at 70 °C RoHS • For PCB version see T53Y series COMPLIANT • Wide ohmic range 10 Ω to 1 MΩ • Small size for optimum packing density • Suitable for both manual or automatic operation

Si4682DY

Abstract: Si4682DY-T1-E3
Contextual Info: Si4682DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 ID (A)a rDS(on) (Ω) 0.0094 at VGS = 10 V 16 0.0135 at VGS = 4.5 V 13 Qg (Typ) 11 nC • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET® Power MOSFET

Si9424BDY-T1-E3

Abstract: Si9424BDY Si9424BDY-T1
Contextual Info: Si9424BDY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.025 at VGS = - 4.5 V - 7.1 0.033 at VGS = - 2.5 V - 6.1 • TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT S SO-8 S 1

DTC114

Abstract: transistor dtc114 dtc114 marking 24 DTC114EE DTC114TE DTC114YE DTC123EE DTC124EE DTC143EE DTC143TE
Contextual Info: DTC114EE Series Bias Resistor Transistor NPN Silicon 3 P b Lead Pb -Free COLLECTOR 3 1 1 BASE SC-89 (SOT-523F) R2 2 EMITTER Maximum Ratings (TA=25°C unless otherwise noted) Rating 2 R1 Symbol VCEO VCBO Value 50 Unit V 50 V IC 100 mA Symbol Max Unit PD 200

si-7501

Abstract: at90can128 output circuit example SI7501 motor driver RS-458 at90can128 can code example AT90CAN128 TMC428 82c250 AT90CAN128 application note parallel port setting for stepper motor
Contextual Info: TMCM-101 One Axis Closed Loop Controller / Driver Module 3A / 28.5V Manual Version: 1.08 June 24th, 2009 Trinamic Motion Control GmbH & Co KG Sternstraße 67 D - 20 357 Hamburg, Germany http://www.trinamic.com TMCM-101 Manual V1.08 Contents 1 2 3 4 Features .3

Si4736DY

Contextual Info: Si4736DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 13 0.0105 at VGS = 4.5 V 12 • TrenchFET Power MOSFET • LITTLE FOOT® Plus Schottky • Shoot-Thru-Free

Contextual Info: Si4462DY Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 1.50 0.510 at VGS = 6.0 V 1.45 • TrenchFET Power MOSFET • PWM Optimized for fast Switching Pb-free Available

SI4856DY-T1

Abstract: Si4856DY Si4856DY-T1-E3
Contextual Info: Si4856DY Vishay Siliconix New Product N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.006 at VGS = 10 V 17 0.0085 at VGS = 4.5 V 14 • TrenchFET Power MOSFETS • 100 % RG Tested Available RoHS* APPLICATIONS COMPLIANT • Buck Converter

Si4955DY

Abstract: Si4955DY-T1-E3
Contextual Info: Si4955DY Vishay Siliconix New Product Asymmetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 - 30 Channel-2 - 20 rDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 0.027 at VGS = - 4.5 V - 7.0

74188

Abstract: SiE810DF
Contextual Info: SPICE Device Model SiE810DF Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC CE ALL RIGHTS RESERVED. 1 REVISIONS DIST - P LTR 1. ASSEMBLY SHOWN FOR REFERENCE ONLY. SHIPPED LOOSE PIECE AS SHOWN ON PAGE 2. DESCRIPTION DATE DWN APVD B ECR-06-013320

Si4500BDY

Abstract: Si4500BDY-T1 Si4500BDY-T1-E3
Contextual Info: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 rDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V

Contextual Info: Si4923DY Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 8.3 0.031 at VGS = - 4.5 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process Pb-free

Contextual Info: Si4856DY Vishay Siliconix New Product N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.006 at VGS = 10 V 17 0.0085 at VGS = 4.5 V 14 • TrenchFET Power MOSFETS • 100 % RG Tested Available RoHS* APPLICATIONS COMPLIANT • Buck Converter

Contextual Info: Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.130 at VGS = - 4.5 V - 1.8 0.170 at VGS = - 2.5 V - 1.5 0.225 at VGS = - 1.8 V - 1.3 • TrenchFET Power MOSFETs • 1.8 V Rated Pb-free Available

Contextual Info: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch

Contextual Info: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS

420MM

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS A MATERIAL INSULATOR: NYLON 66 COLOR: WHITE CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 4.20MM ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C FLAMABILITY RATING: UL94-V2

Si4464DY-T1-E3

Abstract: Si4464DY Si4464DY-T1 72051
Contextual Info: Si4464DY Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • TrenchFET Power MOSFET • PWM Optimized for (Lowest Qg and Low RG) Pb-free Available

SiC730CD9

Abstract: MOSFET LOSSES SYNC BUCK S-61011
Contextual Info: SiC734CD9 Vishay Siliconix New Product Fast Switching MOSFETs With Integrated Driver FEATURES • Low-side MOSFET control pin for pre-bias start-up • Undervoltage Lockout for safe operation RoHS • Internal boostrap diode reduces COMPLIANT component count

Si4911DY

Contextual Info: Si4911DY Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 8.4 0.023 at VGS = - 2.5 V - 7.6 0.029 at VGS = - 1.8 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process

Si1303DL

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free

Contextual Info: Si4682DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 ID (A)a rDS(on) (Ω) 0.0094 at VGS = 10 V 16 0.0135 at VGS = 4.5 V 13 Qg (Typ) 11 nC • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET® Power MOSFET