12AUG13 Search Results
12AUG13 Datasheets Context Search
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Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P LTR DESCRIPTION B2 DATE REVISED PER ECR-12-009561 DWN APVD AY 12AUG13 SZ D D 7.85 7.85 7.85 2 PLC C C 7.85 2 PLC 1.25 2 PLC 1.25 2 PLC 24.51 |
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ecr-12-00956112aug1312nov0125jan02+2 | |
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Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION 5 4 2 3 - LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S CM 00 - _ B y - _ P LTR G1 DESCRIPTION DATE APVD M.T D.Z 12AUG13 REVISED PER E C O -13 - 0 1 073 8 |
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12aug1307nov02 | |
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Contextual Info: SMM2348ES www.vishay.com Vishay Siliconix Medical N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow 30 RDS(on) () at VGS = 10 V 0.024 RDS(on) () at VGS = 4.5 V 0.032 ID (A) |
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smm2348eso-236ot-23smm2348es-t1-ge3+3 | |
MKT468Contextual Info: Preliminary MKT467, MKT468, MKT469 Vishay BCcomponents DC Film Capacitors MKT Radial Lacquered Type 467 l FEATURES w • AEC-Q200 qualified Available taped and loose in box Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 |
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mkt467mkt468mkt469aec-q200+4 | |
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Contextual Info: SPICE Device Model SQ2325ES www.vishay.com Vishay Siliconix P-Channel 150 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sq2325es2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SPICE Device Model Si7308DN www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si7308dn2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SPICE Device Model SiE818DF www.vishay.com Vishay Siliconix N-Channel 75 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sie818df2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: Si2356DS Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () Max. ID (A)a 0.051 at VGS = 10 V 4.3 0.054 at VGS = 4.5 V 4.1 0.070 at VGS = 2.5 V 3.6 • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization: |
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si2356dso-236ot-23si2356ds-t1-ge3+3 | |
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Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE 1.27 to 2.54 µm Ni CONTACT AREA 0.76 µm Gold SOLDER TAIL AREA 2.54 to 5.08 µm Matt Tin |
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ul94-v02002/95/ec30vac100vac/min+2 | |
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Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE 1.27 to 2.54 µm Ni CONTACT AREA 0.76 µm Gold SOLDER TAIL AREA 2.54 to 5.08 µm Matt Tin |
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ul94-v02002/95/ec30vac100vac/min+4 | |
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Contextual Info: NOTES: 1. MATERIALS AND FINISHES PLATING THICKNESS IN MICROINCHES : BODY ASSEMBLY - BRASS, GOLD PLATING (50 MIN THICK) CAP - BRASS, GOLD PLATING (50 MIN THICK) LOOSE CONTACT - BeCu, GOLD PLATING (50 MIN THICK) & ASSEMBLED CONTACT GASKET - SILICONE RUBBER |
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m39012/56-450212-aug-1309-jul-80rg-400/u+1 | |
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Contextual Info: SiS990DN Vishay Siliconix Dual N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f 0.085 at VGS = 10 V 12.1 100 0.090 at VGS = 7.5 V 11.8 0.105 at VGS = 6 V 10.9 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested |
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sis990dn2002/95/ec2011/65/eujs709a+1 | |
VJ Non-Magnetic Series for IR Reflow SolderingContextual Info: VJ Non-Magnetic Series www.vishay.com Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitors for Non-Magnetic Applications FEATURES • • • • • • • • Manufactured with non-magnetic materials Safety screened for magnetic properties C0G NP0 and X7R/X5R dielectrics |
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2002/95/ec2011/65/eujs709a02-oct-12+1 | |
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Contextual Info: SiRA66DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0023 at VGS = 10 V 50 0.0031 at VGS = 4.5 V 50 Qg (Typ.) 19.2 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8 S 6.15 mm |
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sira66dpsira66dp-t1-ge32002/95/ec2011/65/eu+2 | |
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Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE 1.27 to 2.54 µm Ni CONTACT AREA 0.76 µm Gold SOLDER TAIL AREA 2.54 to 5.08 µm Matt Tin |
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ul94-v02002/95/ec30vac100vac/min | |
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Contextual Info: Si7315DN Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) () Max. ID (A)e 0.315 at VGS = - 10 V - 8.9 0.350 at VGS = - 6 V - 8.7 Qg (Typ.) 15.4 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® |
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si7315dn2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SiS990DN Vishay Siliconix Dual N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f 0.085 at VGS = 10 V 12.1 100 0.090 at VGS = 7.5 V 11.8 0.105 at VGS = 6 V 10.9 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested |
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sis990dn2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sir882adp2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SPICE Device Model SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sum90n04-3m3p2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHOR BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE 1.27 to 2.54 µm Ni CONTACT AREA 0.76 µm Gold SOLDER TAIL AREA 2.54 to 5.08 µm Matt Tin |
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ul94-v02002/95/ec30vac100vac/min+4 | |
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Contextual Info: SiR472ADP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a,g RDS(on) () Max. 30 0.0090 at VGS = 10 V 18 0.0115 at VGS = 4.5 V 18 Qg (Typ.) 9 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • • S 3 |
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sir472adpsir472adp-t1-ge32002/95/ec2011/65/eu+2 | |
IEC 384-14 II 55 100 56 x 2
Abstract: F1772-3 300 V-X2
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f1772-2aec-q20040/110/56/c2002/95/ec+5 | |
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Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE 1.27 to 2.54 µm Ni CONTACT AREA 0.76 µm Gold SOLDER TAIL AREA 2.54 to 5.08 µm Matt Tin |
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ul94-v02002/95/ec30vac100vac/min+6 | |
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Contextual Info: 1 2 3 4 5 15.48 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE Nickel CONTACT AREA Pd-Ni + Gold SOLDER TAIL AREA Matt Tin SHIELDING: BRASS MATT TIN PLATED |
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ul94-v02002/95/ec30vac | |