SIE818DF Search Results
SIE818DF Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIE818DF-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 60A 10-POLARPAK | Original | 10 | |||
| SIE818DF-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 60A POLARPAK | Original | 10 |
SIE818DF Price and Stock
Vishay Intertechnologies SIE818DF-T1-E3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIE818DF-T1-E3 | 32 |
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SIE818DF-T1-E3 | 3,000 |
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Vishay Intertechnologies SIE818DF-T1-GE3Transistor: N-MOSFET; TrenchFET®; unipolar; 75V; 60A; Idm: 80A; 125W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIE818DF-T1-GE3 | 3,000 |
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Get Quote | |||||||
Vishay Intertechnologies SIE818DFT1GE3Power Field-Effect Transistor, 16A I(D), 75V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIE818DFT1GE3 | 3,000 |
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Vishay Intertechnologies SIE818DFT1E3N-channel MOSFET, 30V, 8A, Vishay |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIE818DFT1E3 | 3,000 |
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SIE818DF Datasheets Context Search
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Contextual Info: SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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sie818df2002/95/ec2011/65/eu12-mar-12 | |
74485Contextual Info: SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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Contextual Info: SPICE Device Model SiE818DF www.vishay.com Vishay Siliconix N-Channel 75 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sie818df2002/95/ec2011/65/eujs709a+1 | |
SiE818DF-T1-E3
Abstract: SiE818DF-T1-GE3 74485
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sie818df2002/95/ec11-mar-11sie818df-t1-e3+2 | |
74485
Abstract: SiE818DF-T1-E3 SiE818DF-T1-GE3
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sie818df2002/95/ec18-jul-0874485+2 | |
74485
Abstract: SiE818DF-T1-E3
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sie818df18-jul-0874485sie818df-t1-e3 | |
74391Contextual Info: SPICE Device Model SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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sie818dfs-70620rev09-apr-0774391 | |
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Abstract: 7476 7476 data sheet 7476 datasheet AN609
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sie818dfan60914-aug-07322 1102+3 | |
74485Contextual Info: SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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sie818df2002/95/ec11-mar-1174485 | |
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Contextual Info: SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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sie818df2002/95/ec2011/65/eu12-mar-12 | |
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Contextual Info: SPICE Device Model SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Abstract: SiE818DF-T1-E3
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schematic diagram atx Power supply 500w
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BS250KL-TR1-E3
Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
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Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs Pola rPA K M O S F ET s features • Leadframe and plastic encapsulation construction - Provides better die protection and reliability - Easier manufacturing handling - Fixed footprint and pad layout independent of die size, ≤ 100 V |
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vmn-pt0052-1002 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
R312Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Dual Heat Dissipation Paths Increase Current Density AND TEC I INNOVAT O L OGY PolarPAK N HN POWER MOSFETs O 19 62-2012 PolarPAK® Brings Standard Packaging to Double-Sided Cooling FEATURES • Leadframe and plastic encapsulation construction |
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
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