12NOV01 Search Results

965915-1

Abstract: 963530-1 1241858-2 1241732-2 4-1241730-1
Contextual Info: THIS DRAWING IS JfgUBéU ami COPYRIGHT 2000 RELEASED FOR PUBLICATION -E B E L W W f t í W h v ED— BY AMP INCORPORATED. ALLE RECHTE VORBEHALTEN M Í , 2000 . Ï HATED WITH. IPASSEND ZU. LOC REVISIONS DI5T ÄNDERUNGEN AI D LTR DATE DUN APVD NEU DRAWING CREATED

SUM60N04-05LT

Contextual Info: SUM60N04-05LT New Product Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 60a 0.0065 @ VGS = 4.5 V 20a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P LTR DESCRIPTION B2 DATE REVISED PER ECR-12-009561 DWN APVD AY 12AUG13 SZ D D 7.85 7.85 7.85 2 PLC C C 7.85 2 PLC 1.25 2 PLC 1.25 2 PLC 24.51

Contextual Info: SUM110N04-03 New Product Vishay Siliconix N-Channel 40-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFET D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0028 @ VGS = 10 V 110 a

SUM60N04-06T

Contextual Info: SUM60N04-06T New Product Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0055 @ VGS = 10 V 60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature

Contextual Info: SUY50N03-07AP New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A)a, b 0.007 @ VGS = 10 V 25 0.010 @ VGS = 4.5 V 18 D TO-251 G Notes: 1. Drain Connected to Tab G D S 2. Leads Trimmed to 0.092” " 0.003”

DIODE TP S3L 70

Abstract: diode S3L 49 diode S3L 39 DIN 908 DIODE s3l A115A BYT41D T6819 T6819-TBQ T6829
Contextual Info: Features • • • • • • • • • • • • • • Supply voltage up to 40 V RDSon typ. 0.5 Ω @ 25°C, max. 1Ω @ 150°C Up to 1.5 A output current Three high-side and three low-side drivers usable as single outputs or half bridges Capable to switch all kinds of loads such as DC motors, bulbs, resistors, capacitors

Contextual Info: SUM60N04-06T New Product Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0055 @ VGS = 10 V 60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature

Contextual Info: Si7840DP New Product Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 10 V 18 0.014 @ VGS = 4.5 V 15 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile

SUM60P05-11LT

Abstract: SUM60P05
Contextual Info: SUM60P05-11LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) –55 rDS(on) (W) ID (A) 0.011 @ VGS = –10 V –60a 0.0175 @ VGS = –4.5 V –60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode

tab316

Abstract: LS3 104 capacitor A115-A BYT41D SSO20 T6817 T6817-TKQ T6817-TKS U5021M HS38
Contextual Info: Features • Three high-side and three low-side drivers • Outputs freely configurable as switch, half bridge or H-bridge • Capable to switch all kinds of loads such as DC motors, bulbs, resistors, capacitors • • • • • • • • • • •

T2D21

Abstract: SUM60P05
Contextual Info: SUM60P05-11LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) –55 rDS(on) (W) ID (A) 0.011 @ VGS = –10 V –60a 0.0175 @ VGS = –4.5 V –60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode

SI4860DY

Contextual Info: Si4860DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.008 @ VGS = 10 V 16 0.011 @ VGS = 4.5 V 15 APPLICATIONS