SIR472ADP Search Results
SIR472ADP Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|
SIR472ADP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 18A PPAK SO-8 | Original | 9 |
SIR472ADP Price and Stock
Vishay Siliconix SIR472ADP-T1-GE3MOSFET N-CH 30V 18A PPAK SO-8 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SIR472ADP-T1-GE3 | Cut Tape | 6,517 | 1 |
|
Buy Now | |||||
Vishay Intertechnologies SIR472ADP-T1-GE3N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIR472ADP-T1-GE3) |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SIR472ADP-T1-GE3 | Reel | 14 Weeks | 6,000 |
|
Buy Now | |||||
![]() |
SIR472ADP-T1-GE3 |
|
Get Quote | ||||||||
![]() |
SIR472ADP-T1-GE3 | 5,387 | 9 |
|
Buy Now | ||||||
![]() |
SIR472ADP-T1-GE3 | 4,309 |
|
Buy Now | |||||||
![]() |
SIR472ADP-T1-GE3 | Reel | 6,000 |
|
Buy Now |
SIR472ADP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: SiR472ADP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
SiR472ADP AN609, 5361m 3760u 3542m 0384m 8090m 6002m 9811m 0647m | |
Contextual Info: SiR472ADP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) a, g 0.0090 at VGS = 10 V 18 0.0115 at VGS = 4.5 V 18 Qg (TYP.) 9 nC D 5 D 6 • 100 % Rg and UIS tested • Optimized for high-side switching in |
Original |
SiR472ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiR472ADP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) a, g 0.0090 at VGS = 10 V 18 0.0115 at VGS = 4.5 V 18 Qg (TYP.) 9 nC D 5 D 6 • 100 % Rg and UIS tested • Optimized for high-side switching in |
Original |
SiR472ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiR472ADP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a,g RDS(on) () Max. 30 0.0090 at VGS = 10 V 18 0.0115 at VGS = 4.5 V 18 Qg (Typ.) 9 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • • S 3 |
Original |
SiR472ADP SiR472ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model SiR472ADP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
Original |
SiR472ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |