SI2356DS Search Results

Contextual Info: Si2356DS Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () Max. ID (A)a 0.051 at VGS = 10 V 4.3 0.054 at VGS = 4.5 V 4.1 0.070 at VGS = 2.5 V 3.6 • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization:

Contextual Info: Si2356DS-GE3_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: SPICE Device Model Si2356DS www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

Contextual Info: LTC3638 High Efficiency, 140V 250mA Step-Down Regulator Features n n n n n n n n n n Wide Operating Input Voltage Range: 4V to 140V Internal Low Resistance Power MOSFET No Compensation Required Adjustable 20mA to 250mA Maximum Output Current Low Dropout Operation: 100% Duty Cycle