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    SI7315DN Search Results

    SI7315DN Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI7315DN-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 150V 8.9A 1212-8 Original PDF 13
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    SI7315DN Price and Stock

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    Vishay Siliconix SI7315DN-T1-GE3

    MOSFET P-CH 150V 8.9A PPAK1212-8
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    DigiKey () SI7315DN-T1-GE3 Digi-Reel 87 1
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    SI7315DN-T1-GE3 Cut Tape 87 1
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    SI7315DN-T1-GE3 Reel 3,000
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    IBS Electronics SI7315DN-T1-GE3 6,000
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    Vishay Intertechnologies SI7315DN-T1-GE3

    Power MOSFET, P Channel, 150 V, 8.9 A, 0.315 ohm, PowerPAK 1212, Surface Mount - Tape and Reel (Alt: SI7315DN-T1-GE3)
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    Avnet Americas SI7315DN-T1-GE3 Reel 6,000 3,000
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    Mouser Electronics SI7315DN-T1-GE3
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    Verical SI7315DN-T1-GE3 39,000 3,000
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    Arrow Electronics SI7315DN-T1-GE3 39,000 60 Weeks 3,000
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    Newark SI7315DN-T1-GE3 Bulk 1
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    TTI SI7315DN-T1-GE3 Reel 12,000 3,000
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    Vishay Huntington SI7315DN-T1-GE3

    MOSFET P-CH 150V 8.9A PPAK1212-8
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    Win Source Electronics SI7315DN-T1-GE3 12,721
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    SI7315DN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si7315DN Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) () Max. ID (A)e 0.315 at VGS = - 10 V - 8.9 0.350 at VGS = - 6 V - 8.7 Qg (Typ.) 15.4 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®


    Original     		Si7315DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si7315DN Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) () Max. ID (A)e 0.315 at VGS = - 10 V - 8.9 0.350 at VGS = - 6 V - 8.7 Qg (Typ.) 15.4 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®


    Original     		Si7315DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SPICE Device Model Si7315DN www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		Si7315DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF