SQ2325ES Search Results
SQ2325ES Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SQ2325ES-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 150V 840MA TO236 | Original | 249.63KB |
SQ2325ES Price and Stock
Vishay Intertechnologies SQ2325ES-T1_GE3Trans MOSFET P-CH 150V 0.84A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
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SQ2325ES-T1_GE3 | 35 | 7 |
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SQ2325ES-T1_GE3 | Cut Strips | 35 | 1 |
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SQ2325ES-T1_GE3 | 24 Weeks | 3,000 |
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Vishay Intertechnologies SQ2325ES-T1 GE3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQ2325ES-T1 GE3 | 2,400 |
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Vishay Intertechnologies SQ2325EST1GE3Small Signal Field-Effect Transistor, 0.84A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQ2325EST1GE3 | 66,915 |
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Vishay Siliconix SQ2325ES-T1_GE3MOSFET P-CH 150V 840MA TO236 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQ2325ES-T1_GE3 | 44,910 |
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SQ2325ES Datasheets Context Search
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Contextual Info: SPICE Device Model SQ2325ES www.vishay.com Vishay Siliconix P-Channel 150 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sq2325es2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SQ2325ES_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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sq2325esan6096560u0366u+6 | |
SQ2325ES
Abstract: SQ2325ES-T1-GE3
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sq2325eso-236ot-23aec-q101+3 | |
SQ2325ESContextual Info: New Product SQ2325ES www.vishay.com Vishay Siliconix Automotive P-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg Tested |
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sq2325eso-236ot-23aec-q101+3 | |
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Contextual Info: SQ2325ES www.vishay.com Vishay Siliconix Automotive P-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) -150 RDS(on) () at VGS = -10 V 1.77 • TrenchFET power MOSFET • AEC-Q101 qualified ID (A) -0.84 • 100 % Rg and UIS tested Configuration |
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sq2325esaec-q101ot-23o-236+4 | |
SQ2325ESContextual Info: New Product SQ2325ES www.vishay.com Vishay Siliconix Automotive P-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg Tested |
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sq2325eso-236ot-23aec-q101+3 | |
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Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ |
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aec-q101vmn-sg2151-1212 | |
SQ3427
Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
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aec-q101vmn-sg2151-1209docu33-4-9337-2727sq3427+9 |