12N90Q Search Results

L1047

Abstract: 12N90Q D1488
Contextual Info: IZIIXYS HiPerFET Power MOSFETs Q Class IXFH 12N90Q IXFT 12N90Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt V DSS ^D25 D DS on = 900 V = 12 A = 0.9 Q t rr < 200 ns Preliminary data sheet Symbol Test C onditions Maximum Ratings V DSS Td = 25°C to 150°C

Contextual Info: OIXYS HiPerFET Power MOSFETs Q Class IXFH 12N90Q VDSS IXFT 12N90Q I D25 ^ D S o n N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt = 900 V = = 12 A 0 .9 Q trr < 200 ns P relim inary d a ta sh e e t Symbol Test Conditions Maximum Ratings

Contextual Info: HiPerFETTM Power MOSFETs Q Class IXFH 12N90Q IXFT 12N90Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt VDSS ID25 RDS on = 900 V = 12 A = 0.9 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

12n90q

Abstract: PLUS247
Contextual Info: HiPerFETTM Power MOSFETs Q Class IXFH 12N90Q IXFT 12N90Q IXFX 12N90Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt VDSS ID25 RDS on = 900 V = 12 A = 0.9 Ω trr ≤ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: HiPerFETTM Power MOSFETs Q Class IXFH 12N90Q IXFT 12N90Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt VDSS ID25 RDS on = 900 V = 12 A = 0.9 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

C1146

Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

C1218

Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Contextual Info: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268