120NS Search Results

Contextual Info: UM23C24100 1,572,864 X 16/3,145,728 X 8 BIT CMOS MASK ROM P R E L IM IN A R Y Features • 1,572,864 x 16/3,145,728 x 8-bit organization * Single +5V power supply * Access time: 120ns max. ■ Current: Operating: 60mA (max.) Standby: 50 <;A (max.) ■ Three-state outputs for wired-OR expansion

44-PIN dice

Contextual Info: UM 23C16100A 1,048,576 X 16/2,097,152 x 8 BIT CMOS MASK ROM Features • 1,048,576 x 16 bit or 2,097,152 x 8 bit organization ■ Single +5V power supply ■ Access time: 120ns max. ■ Current: Operating: 50 mA (max.) _ Standby. 100 uA (max.) ■ Mask programmed _for chip enable (Power-down) C E / CE,

as3145

Contextual Info: UM23C24002 3,145,728 X 8 BIT CMOS MASK ROM PRELIM INARY Features • ■ ■ ■ ■ ■ ■ TTL-compatible inputs and outputs 3,145,728 x 8-bit organization Single +5V power supply Access time: 120ns max. Current: Operating: 60mA (max.) Three-state outputs for w ired-OR expansion

XM28C010P

Contextual Info: XM28C010P 1 Megabit Puma Module 32K x 32 Bit High Speed 5 Volt Byte Alterable Nonvolatile Memory Array • High Reliability —Endurance: 100,000 Cycles —Data Retention: 100 Years FEATURES • High Speed, High Density Memory Module —150ns, 120ns, 90ns and 70ns Access Times

Contextual Info: 2SK2044 AP A d v a n c e d P e rfo rm a n c e Series _ Vdss“ 600V N Channel Power M OSFET £4286 F e a tu r e s • Low ON resistance. ■Very high-speed sw itching. • H igh-speed diode (trr= 120ns). ■M icaless package facilitatin g mounting.

3A73

Contextual Info: 1M BIT 65,536 W O R D x 16 BIT C M O S M A S K R O M DESCRIPTION The TC531024P/F is a 1,048,576 bits read only memory organized as 65,536 words by 16 bits. The TC531024P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high speed and low power features with access time of 120ns / 150ns, an operation current of 40mA at

Contextual Info: IDT7130SA/LA 1DT7140SA/LA CMOS DUAL-PORT RAM 8 K 1 K x 8-BIT Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 25/30/35/45/55/70/90/100/120ns (max.) —Commercial: 20/25/30/35/45/55/70/90/100ns (max.) • Low-power operation

32-TSOP2-400F

Abstract: altl
Contextual Info: ADVANCED KM68V4000AL/AL-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Ststic RAM Low VoltQge Operstion FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) :3«W(Typ.) L-Version 1.5« W(Typ.) LL-Version

M27V201

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M27V201 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 120ns ■ LOW POWER CONSUMPTION: – Active Current 15mA at 5MHz 32 32 – Standby Current 20µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

Contextual Info: & 27C128 Microchip 128K 16K X 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C128 is a CMOS 128K • • • • — 120ns access tim e available CMOS Technology for low power consumption — 20mA Active current

MAX4189

Abstract: MAX4189ESD MAX4190 TAJB106M010 MAX4188 RG3390
Contextual Info: 19-1369; Rev 0; 7/98 MAX4188 Evaluation Kit _Features ♦ Fast Enable/Disable Times 120ns/35ns _Component List _Ordering Information DESIGNATION QTY DESCRIPTION C1, C4 2 10µF, 10V, 20% tantalum capacitors

29F800T

Abstract: 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12
Contextual Info: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption

MASK ROM 32M PROGRAM

Abstract: K3N6C4000E-DC mask rom A2034
Contextual Info: K3N6C4000E-DC CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 100ns(Max.) : CL=50pF 120ns(Max.) : CL=100pF • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.)

Contextual Info: K3N5V U 1000E-D(G)C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF

555H

Abstract: MX29F200B MX29F200T
Contextual Info: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz

29F080

Abstract: 29f080-90 MX29F080 SA10 SA11 SA12 SA13 SA14
Contextual Info: PRELIMINARY MX29F080 8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • • • • • • • • 1,048,576 x 8 byte mode only stuction Single power supply operation - 5.0V only operation for read, erase and program operation Fast access time: 70/90/120ns

Contextual Info: K3N5V U 1000E-TC CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF

Contextual Info: K3N7V U 1000B-TC CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF

Contextual Info: MICROELECTRONICS XL28C64B E x txH o n ctin? 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN C O N F IG U R A TIO N S F E A TU R ES • Fast Read A ccess T im es — 120ns, 150ns, 200ns and 250ns ■ Low C M O S P o w er C onsum ption

Contextual Info: ELMO SEMIC OND UCTOR CORP M3E D • BSTQSbM QQDDÜS1 0 * E S C C PRELIMINARY T-Hb-\3-»'7 8 M egabit FLASH MEMORY Features: ♦ 1Mb x 8 Organization ♦ Access Time of 120ns ♦ Low Power Operation: Standby: 1mA Max. Operating: 50mA Max. ♦ 10,000 Erase/Program Cycles

Contextual Info: '7 005120 F eatures 4 « n v-t'cA. Paged. C onfigurations w ith Page Reset on Pozuet—Up AT27C512 - Not Paged, 64K x B AT27C51S - 4 Pages. 16K x fl AT27CS1S - 2 Pages. S2K x 8 Low Power CMOS Operation 40mA max. Active a t SMHx 100y,A max. Stan dby F ast Read Access Time — 120ns

Contextual Info: WSF128K16-XXX 128Kx16 SRAM / NOR FLASH MODULE SMD 5962-96900*  Weight FEATURES  Access Times of 35ns (SRAM) and 70ns (FLASH) • WSF128K16-H1X — 13 grams typical • WSF128K16-XG1UX1 — 5 grams typical  Access Times of 70ns (SRAM) and 120ns (FLASH)

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

Contextual Info: T T WPF29640-120GVI WHITE /MICROELECTRONICS 64M BYTE 4x4Mx32 FLASH (5VSupply;5V Program) SIMM MODULE A D VA N C ED * FEATURES • A ccess Tim e of 120ns ■ 10,000 E rase/Program Cycles Packaging: • B lock Erase/Program Lockout du ring Pow er T ra n sitio n s