11D TRANSISTOR Search Results

MOTOROLA 813 transistor

Abstract: h11d1 motorola PD3007
Contextual Info: QT Optoelectronics SEMICONDUCTOR TECHNICAL DATA T O VDE UL & CSA Order this document by H11D1/D •i SET SEMKO DEMKO NEMKO BABT H 11D 1* Glob al Optoi solator H11D2 6-Pin DIP Optoisolators High Voltage TVansistor Output 300 Volts [CTR =20% Min] "Motorola Preferred Device

H11D1

Abstract: H11D3 VDE0113 VDE0160 VDE0832 VDE0833 VDE0883
Contextual Info: MOTOROLA SE M IC O N D U C TO R TECHNICAL DATA H11D 1 H 11 D 2 H 11 D 3 H 11D 4 6 -P in D IP O p to is o la to rs Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e ,

Transistor TT 2140

Abstract: npn transistor w27 b24jf 251C M54526P bipolar power transistor driver circuit bipolar dc clamp
Contextual Info: b 2 4 clflB 7 b3E D 0M 11D M IT S U B IS H I DGTL 51? H n iT 3 M ITSUBISHI BIPOLAR DIGITAL ICS M54526P LOGIC 7-U N IT 500m A DARLINGTON TR A N S IS TO R ARRAY W IT H C L A M P DIODE DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h e M 54526P, 7 -ch an n e l sink driver, consists of 14 N PN tran ­

MCT2E

Abstract: H11A1 H24A1 H24A2 H24A3 H24A4 IS74 SFH609-1 SFH609-2 SFH609-3
Contextual Info: ISOCOM COMPONENTS Photo Transistor General Purpose 4 and 6 Pin DIP Part Number Current Transfer Ratio If = 10mA Min % Features Contin u ou s Forw ard Current Max (m A) 20 4 Pin P a ckage 75 H24A 4 50 H11A1 50 350 0 IL2 NEW 30 ( If= 1m A) 750 0 100 IS1 3.0

transistor SMD 11d

Abstract: 11D transistor Diode smd 11D J
Contextual Info: SIEMENS H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS* HIGH BVcer VOLTAGE OPTOCOUPLER FEATURES Packaqe Dimensions in Inches mm . • CTR at lF=10 mA, BVCER=10 V: >20% • Good CTR Linearity with Forward Current • Low CTR Degradation ♦ " I?1 fSlVl

Contextual Info: S IE M E N S BFQ19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5GHz at collector currents from 10 mA to 70 mA • C EC C -type available: C E C C 50 002/259 E S P : Electrostatic discharge sensitive device, observe handling precaution!

kd 2902

Contextual Info: 2SA1455K V ~ 7 > v 7 > $ / 7 ransistors 2 S A 1 4 5 5 K Epitaxial Planar PNP Silicon Transistor * W E f iJ S * f iM i* 1 S f f l/H ig h Voltage Low Freq. Low Noise Amp. • h y > V ¿3/Dimensions Unit : mm 1) r a H E E T '£ > 3 0 V c E O = — 120V 2) N F = 0 .2 d B (Typ.)

1301P

Abstract: K1206 ldmos
Contextual Info: ERICSSON PTE 10125* 135 Watts, 1.4-1.6 GHz LDMOS Field Effect Transistor Description The 10125 is an internally m atched, comm on source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DAR. Rated output

Contextual Info: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features: • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size

Contextual Info: ERICSSON ^ PTE 10107* 5 Watts, 2.0 GHz LDMOS Field Effect Transistor Description The 10107 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2,0 GHz. It is rated at 5 watts minimum output power. Ion implantation, nitride

11D transistor

Contextual Info: SIEMENS H11 D1/H11 FEATURES • CTR at lp=10 mA.BVcERxlOV: 220% • Good CTR Linearity with Forward Currant • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage Phototransistor, 5.3 KV, TRÍOS High BVcer Voitage Optocoupler Dimensions in inches mm

Contextual Info: r z 7 S G S -T H O M S O N ^ T # . IM O g M IlL J ir a R a D (g i A M 8 0 6 1 0 -0 3 0 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS • R E F R A C T O R Y /G O L D M ETA LLIZA T IO N ■ E M IT T E R S IT E B A LLA STED > IN P U T /O U T P U T M A T C H IN G

C3902

Abstract: 25A15 SC3902 A 1507 EN2101B 2SA audio POWER TRANSISTORS tA 1507 2SA1507 Audio Circuit with IC 701
Contextual Info: Ordering number:EN2101B _ 2SA1507/2SC3902 PNP/NPN Epitaxial Planar Silicon Transistors 160V/1.5A Switching Applications A pplications • Color TV audio output, converters, inverters. F e a tu re s •High breakdown voltage. • Large current capacity.

Contextual Info: ERICSSON ^ PTE 10043* 12 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10043 is an internally matched, common source, n-channel en­ hancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts minimum

Contextual Info: HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS The H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled

marking RJA

Contextual Info: NSL12AW Product Preview High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications 12 VOLTS 3.0 AMPS PNP TRANSISTOR Features: • • • • http://onsemi.com High Current Capability (3 A) High Power Handling (Up to 650 mW)

Contextual Info: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B - DECEMBER 1976 - REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D OR N PACKAGE TOP VIEW 500-mA Rated Collector Current (Single Output) High-Voltage Outputs . . . 100 V

TIL112

Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

marking PD

Abstract: NSL12AW NSL12AWT1
Contextual Info: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features: • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size

BS0615N

Abstract: smd diode marking code ug SMD diode KL 615N smd diode marking FG smd code marking book smd diode Mu smd code BS0 26APulsed BS0615
Contextual Info: BSO 615N Infineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance ^DSion 0.15 ß • Avalanche rated Continuous drain current fc> 2.6 A

BLF245

Abstract: sot123 package VHF transistor amplifier circuit
Contextual Info: Philips Semiconductors tb S B T B l GGSTTSB SOT M APX Product specification VHF power MOS transistor BLF245 N AUER PHILIPS/DISCRETE b^E T> PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability

BLF544B

Abstract: 74649
Contextual Info: Product specification Philips Sem iconductors bb£3^31i 0030137 0^2 M A P X UHF push-pull power MOS transistor N AMER PHILIPS/DISCRETE BLF544B b*îE D- PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

PIC1670

Abstract: vending machine pic microcontroller PIN CONFIGURATION OF PIC1670 PIC1665
Contextual Info: MICROCHIP TECHNOLOGY INC 22E D t.lG3501 OOQMTlfl 5 • -0 & M ic r o c h ip 8 Bit Microcontroller FEATURES PIN CONFIGURATION 40 Lead Dual In Line 1024 x 13-bit Program ROM 64 x 8-bit RAM 16 special purpose registers Arithmetic Logic Unit Sophisticated interrupt structure

H11AV1A

Abstract: H11AV3 SL5504 507Q
Contextual Info: — TH OM SO N/ DISTRIBUTOR SfiE D • T0Et.ñ?3 OQDS74fi 741 ■ TCSK Optoelectronic Products Optoisolators/Optocouplers T ype # D e s c rip tio n S u rg e Iso la tio n V o lta g e RMS M in Continued C u rre n t T ra n s fe r R a tio M in T y p ic a l (ps)