1301P Search Results

9434

Abstract: transistor 1877 ADC 50 Ghz p 477 RF 1501 RF NPN POWER TRANSISTOR 3 GHZ 200 watts
Contextual Info: e PTB 20074 14 watts, 1.477–1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP

PTB 20245

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ
Contextual Info: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is

capacitor siemens 4700 35

Contextual Info: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of

resistor qbk

Contextual Info: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11

transistor rf m 9837

Contextual Info: e PTF 10114 12 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10114 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 12 watts power output. Nitride surface

e20231

Abstract: 20231 transistor E101
Contextual Info: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power

RF NPN POWER TRANSISTOR 3 GHZ 200 watts

Contextual Info: e PTB 20175 55 Watts, 1.9–2.0 GHz Cellular Radio RF Power Transistor Description The 20175 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.9 to 2.0 GHz. It is rated at 55 watts minimum output power and may be used for both CW and PEP

ericsson 10159

Abstract: PTF10159 470-860 mhz Power amplifier w
Contextual Info: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power

Contextual Info: PRE-RELEASE PTF 10041* 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10041 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 12 watts power output. Nitride surface passivation

20191 ic

Contextual Info: e PTB 20191 12 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.

PTB 20200

Contextual Info: e PTB 20167 60 Watts, 850–960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier

hit 215

Contextual Info: e E S A E L E R E PR HIT 1920-10 PTE 31042* 10 Watts, 1.9–2.0 GHz 50-Ohm Power Hybrid Description • The 1920-10 is a 50–ohm power hybrid intended for applications requiring linear power amplification in the PCS frequency range. The part is designed to operate with 50–ohm source and load impedances

K934

Abstract: LZ9GG31 8c542 VXD1 switch K2961 ZENER3 UCB1300 lcd inverter board schematic MAX1692EUB VXD1
Contextual Info: Intel StrongARM* SA-1110 Development Board Schematics May 2000 Phase 5 Order No: 278279-006 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no

P4917-ND

Abstract: capacitor siemens 4700 35 G200
Contextual Info: PTF 10015 50 Watts, 300–960 MHz GOLDMOS Field Effect Transistor Description Features The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full

atc 17-33

Abstract: transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 capacitor siemens 4700 35 atc 1733
Contextual Info: PTF 10036 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and full gold metallization ensure

10125

Abstract: G200 K1206 rf mosfet ericsson
Contextual Info: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated

smt a1 transistor

Abstract: A1234 G200 PTF 10021
Contextual Info: PTF 10021 30 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is

TRANSISTOR 955 E

Abstract: PTB 20148 35 W 960 MHz RF POWER TRANSISTOR NPN IC 935 965 transistor
Contextual Info: e PTB 20148 60 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP

2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 10149
Contextual Info: PTF 10149 70 Watts, 921–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10149 is an internally matched, 70 Watt LDMOS FET intended for cellular and GSM amplifier applications from 921–960 MHz. This device operates at 50% efficiency with 16 dB of gain. Nitride

G200

Contextual Info: PTF 10111 6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure

Contextual Info: PTH 32003 25 Watts, 1.9–2.0 GHz 50-Ohm High-Gain Power Hybrid Description • The PTH 32003 is a high–gain 50–ohm power hybrid intended for applications requiring linear amplification and high gain in the PCS frequency range. The part is designed to operate with 50–ohm source

9434

Abstract: PTB 20200 PTB 20171 transistor b 1166 transistor 9350
Contextual Info: e PTB 20171 25 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP

0930 IC

Contextual Info: PTB 20239 12 Watts, 1465–1513 MHz Cellular Radio RF Power Transistor Description The PTB 20239 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 12 watts minimum output power, it may be used for both CW

JX - 638

Abstract: 20190 UT85-25 UT-85-25 0280 212 010 microstrip
Contextual Info: e PTB 20190 175 Watts, 470–806 MHz Digital Television Power Transistor Description The 20190 is a class AB, NPN, common emitter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically