9434 Search Results

Contextual Info: o A3 9 4 6 3 6 0 - ì COMME /N0 / 0UE IO m UD 'T cn NO TIC E D ' U T I L I S A T I O N o 15 150 16 T IC 949497 - 2 1 -349497-0 349497-6 943497-5 g49497-4 949497-3 NUMERO i: if is 13 ÎÏ i l lo! oQ [DESSINE LE 23/ 04/ 9f PAP PRESSION SUR PO/GNEES : 500 g VERIFIE LE

IRHY597130CM

Abstract: IRHY593130CM T0-257AA
Contextual Info: PD - 94343 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597130CM 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A International Rectifier’s R5TM technology provides

GA600HD25S

Abstract: igbt "internal thermistor" int-a-pak
Contextual Info: PD - 94341A GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DUAL INT-A-Pak Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package

IRF7F3704

Abstract: TC.. 12A MOSFET Drivers 4.5v to 100v input regulator
Contextual Info: PD-94340B HEXFET POWER MOSFET THRU-HOLE TO-39 IRF7F3704 20V, N-CHANNEL Product Summary Part Number BVDSS IRF7F3704 20V RDS(on) 0.035Ω ID 12A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

ST T4 3560

Abstract: T2 AL 250V 150Vt GA600HD25S
Contextual Info: PD - 94341 GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DOUBLE INT-A-Pak Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package

Contextual Info: PD - 94349A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y31N20 200V, N-CHANNEL Product Summary Part Number BVDSS IRF5Y31N20 200V RDS(on) 0.092Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

7c264

Abstract: PLD201 CY7C264 CY7C342 P201 7c26
Contextual Info: Qualification Report February 1996, QTP# 94341, Version 1.0 CMP QUALIFICATION FOR P201 AND PLD201 PROCESS 1 CY7C2xx and CY7C3xx PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied:

GA150KS61U

Abstract: ge 142
Contextual Info: PD -94346 GA150KS61U Low Side Switch Chopper Module Ultra-FastTM Speed IGBT IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 9434 Multi-Conductor - Audio, Control and Instrumentation Cable For more Information please call 1-800-Belden1 Description: 22 AWG stranded 7x30 tinned copper conductors, conductors cabled, PVC insulation, PVC jacket.

JANSR2N7547T3

Contextual Info: PD-94343A IRHY597130CM RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA JANSR2N7547T3 100V, P-CHANNEL REF: MIL-PRF-19500/712 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A JANSR2N7547T3

IRF5Y31N20

Contextual Info: PD - 94349A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y31N20 200V, N-CHANNEL Product Summary Part Number BVDSS IRF5Y31N20 200V RDS(on) 0.092Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRL7N1404

Abstract: LOGICGATE smd diode 5s
Contextual Info: PD - 94348A HEXFET POWER MOSFET SURFACE MOUNT SMD-1 IRL7N1404 40V, N-CHANNEL Product Summary Part Number BVDSS IRL7N1404 40V RDS(on) 0.006Ω ID 55A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

Contextual Info: PD-94342F 2N7583U2 IRHNA67260 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67260 Radiation Level 100K Rads (Si) RDS(on) 0.028Ω ID 56A* IRHNA63260 300K Rads (Si) 0.028Ω 56A* International Rectifier’s R6TM technology provides

2n7583

Abstract: 2N7583U2
Contextual Info: PD-94342E 2N7583U2 IRHNA67260 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67260 Radiation Level 100K Rads (Si) RDS(on) 0.028Ω ID 56A* IRHNA63260 300K Rads (Si) 0.028Ω 56A* International Rectifier’s R6TM technology provides

PAL16L8

Abstract: Epoxy Sumitomo 1085 cy7b185 EME-6300H CY7B145 PAL20 CY7B185-VC
Contextual Info: Qualification Report February, 1995 - QTP# 94342 Version 1.0 BICMOS CHEMICAL MECHANICAL POLISHING CMP PRODUCT DESCRIPTION (for qualification) Information provided in this document is intended for generic qualification and technically describes the Cypress part

Contextual Info: PD - 94348 HEXFET POWER MOSFET SURFACE MOUNT SMD-1 IRL7N1404 40V, N-CHANNEL Product Summary Part Number BVDSS IRL7N1404 40V RDS(on) 0.006Ω ID 55A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

9433

Abstract: 72311 9434 9434 8 pin integrated circuit DG9433DQ dual low leakage SOT23 package 200 V DG9432 DG9432DQ DG9433 DG9434
Contextual Info: DG9432/9433/9434 New Product Vishay Siliconix Low-Voltage Dual SPST Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D Wide Operation Voltage +2.7 to +12 V Low Charge Injection - QINJ: 1 pC Low Power Consumption TTL/CMOS Logic Compatible Over The Full

Contextual Info: PD-94342E 2N7583U2 IRHNA67260 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67260 Radiation Level 100K Rads (Si) RDS(on) 0.028Ω ID 56A* IRHNA63260 300K Rads (Si) 0.028Ω 56A* International Rectifier’s R6TM technology provides

IRF7F3704

Abstract: TYPE 310 4.5v to 100v input regulator
Contextual Info: PD - 94340 HEXFET POWER MOSFET THRU-HOLE TO-39 IRF7F3704 20V, N-CHANNEL Product Summary Part Number BVDSS IRF7F3704 20V RDS(on) 0.05Ω ID 12A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRF 949

Abstract: IRHNA63260 IRHNA67260
Contextual Info: PD - 94342C RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67260 100K Rads (Si) IRHNA63260 300K Rads (Si) RDS(on) 0.028Ω 0.028Ω ID 63A 63A SMD-2 International Rectifier’s R6 technology provides

Contextual Info: PD-94340B HEXFET POWER MOSFET THRU-HOLE TO-39 IRF7F3704 20V, N-CHANNEL Product Summary Part Number BVDSS IRF7F3704 20V RDS(on) 0.035Ω ID 12A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRF 949

Abstract: mosfet 40a 12v IRHNA63260 IRHNA67260
Contextual Info: PD-94342D RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67260 100K Rads (Si) IRHNA63260 300K Rads (Si) RDS(on) 0.028Ω 0.028Ω ID 56A∗ 56A∗ International Rectifier’s R6TM technology provides

Contextual Info: PD-94342G 2N7583U2 IRHNA67260 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67260 Radiation Level 100K Rads (Si) RDS(on) 0.028Ω ID 56A* IRHNA63260 300K Rads (Si) 0.028Ω 56A* SMD-2 International Rectifier’s R6TM technology provides

IRHNA63260

Abstract: IRHNA64260 IRHNA67260 IRHNA68260
Contextual Info: PD - 94342 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67260 100K Rads (Si) RDS(on) 0.028Ω ID 63A IRHNA63260 300K Rads (Si) 0.028Ω 63A IRHNA64260 600K Rads (Si)