P5276 Search Results

Contextual Info: PTF 10043 GOLDMOS Field Effect Transistor 12 Watts, 1.9–2.0 GHz Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device

IDG200

Contextual Info: ERICSSON $ PTE 10035* 30 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10035 is an internally matched common source n-channel en­ hancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts minimum

PTE10026

Contextual Info: E R IC SSO N í PTE 10026* 6 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10026 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation

Transistor AC 51 0865 75 834

Abstract: ATC 1084 fe 5571 AC 51 0865 Transistor AC 51 0865 75 730 ic atc 1084 PTE 10011 Ericsson
Contextual Info: E R IC SSO N í PTE 10011* 6 Watts, H F - 1 . 5 GHz L D M O S Field Effect Transistor Description The 10011 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation

P4917-ND

Abstract: capacitor siemens 4700 35 G200
Contextual Info: PTF 10015 50 Watts, 300–960 MHz GOLDMOS Field Effect Transistor Description Features The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full

capacitor siemens 4700 35

Abstract: G200 atcb
Contextual Info: PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description • • The PTF 10043 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts

ERICSSON 10031

Abstract: PTF 10031 ericsson b
Contextual Info: ERICSSON ^ PTF 10031 45 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10031 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 45 watts minimum output power. Nitride surface passivation

10019

Abstract: P4917-ND
Contextual Info: ERICSSON ^ PTE 10019* 70 Watts, 860-960 MHz LDMOS Field Effect Transistor Description The 10019 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for cellular, GSM, and DAMP applications in the 860 to 960 MHz range. It is rated at 70 watts

Contextual Info: ERICSSON ^ PTE 10101* 60 Watts, 1.0 GHz LDMOS Field Effect Transistor Description Performance at 960 MHz, 28 Volts - Output Power = 60 Watts - Power Gain = 12.0 dB Typ - Efficiency = 55% Typ Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage

PTF10027

Abstract: ericsson 10027 f 0952
Contextual Info: ERICSSON $ PTF 10027 12 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10027 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 12 watts minimum output power. Nitride surface passivation

transistor 21789

Contextual Info: ERICSSON ^ PTE 10109* 55 Watts, 470-860 MHz LDMOS Field Effect Transistor Description The 10109 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 860 MHz. It is rated at 55 watts minimum output power. Nitride surface passivation

transistor 21789

Abstract: ERICSSON 10031 PTF 10031
Contextual Info: ERICSSON í PTF 10031 45 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10031 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 45 w a tts m inim um o u tp u t power. N itride surface

transistor 21789

Abstract: 0965 TRANSISTOR ATC 1595
Contextual Info: ERICSSON ^ PTE 10101 60 Watts, HF-1.0 GHz LDMOS Field Effect Transistor Description The 10101 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 60 w a tts m inim um o u tp u t power. N itride surface

ic 0941

Abstract: ericsson 10027 10027 mosfet SIEMENS B 58 371 R/Atmel 0947
Contextual Info: E R IC SSO N í PTE 10027* 12 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10027 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 18 watts minimum output power. Nitride surface passivation

data transistor 1650

Abstract: G200
Contextual Info: PTF 10045 30 Watts, 1.60–1.65 GHz GOLDMOS Field Effect Transistor Description The PTF 10045 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.65 GHz. It is rated at 30 watts power output. Nitride surface passivation

G200

Contextual Info: PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device

ATC 1084

Abstract: pte10011
Contextual Info: ERICSSON $ PTE 10011* 6 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10011 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation

ERICSSON 10031

Abstract: G200
Contextual Info: PTF 10031 50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10031 is a 50 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization ensure

ERICSSON 10031

Abstract: G200
Contextual Info: GOLDMOS PTF 10031 Field Effect Transistor 50 Watts, 1.0 GHz Description The PTF 10031 is a 50–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. This device operates at 55% efficiency with 13 dB gain. Nitride surface passivation and full gold

F 10007

Abstract: G200 10007
Contextual Info: PTF 10007 GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization

G200

Abstract: 10007
Contextual Info: PTF 10007 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10007 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization

Contextual Info: PTF 10015 50 Watts, 300–960 MHz GOLDMOS Field Effect Transistor Description Features The PTF 10015 is a 50–watt GOLDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. This device operates at 55% efficiency with 13 dB gain. Nitride surface

PTF10026

Abstract: U016 10026 IEC-68-2-54
Contextual Info: ERICSSON ^ PTF 10026 6 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10026 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation

G200

Abstract: 500 watts amplifier schematic diagram
Contextual Info: PTF 10045 GOLDMOS Field Effect Transistor 30 Watts, 1.60–1.65 GHz Description • The PTF 10045 is a GOLDMOS FET intended for large signal amplifier applications to 1.65 GHz. Rated at 30 watts power output, it operates at 43% efficiency with 11.5 dB gain. Nitride surface passivation and