10D4 DIODE
Abstract: 10d4
Contextual Info: SILICON RECTIFIER DIODE IODI— IODIO i a /i oo ~ i o o o v FEATURES • Miniature Size 0 Low Forward Voltage Drop • Low Reverse Leakage Current • High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS >vs TYPE Voltage Rating
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10d10bbl5123ddd231410d4 diode+110d4
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10D10 diode
Abstract: 10d2 diode 10D4 DIODE 10D10 10D4 DIODE 10D2
Contextual Info: IODI-IODIO ÌA/IOO— IOOOV SILICON RECTIFIER DIODE FEA TU R ES » Miniature Size » Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS \TYPE Voltage Rating Symbol'''^
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10d1010d10 diode10d2 diode10d4 diode+210d4diode 10d2
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10D10 diode
Abstract: 10D10 10d2 diode 10D4 T3B diode 10D6 diode 10dl 10D2 10D8 10D4 DIODE
Contextual Info: SILICON RECTIFIER DIODE IODI— IODIO ia /ioo ~ iooov FEATUR ES • Miniature Size 0 Low Forward Voltage Drop ° Low Reverse Leakage Current • High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S >\T¥PE Voltage Rating
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10d10bbl51eb000e31410d10 diode+810d2 diode10d4t3b diode10d6diode 10dl10d210d810d4 diode
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11505A
Abstract: diode zener 1n4002 10D10 diode 11708a 30S4 DIODE ir 10d10 diode 30S10 diode DIODE 10D1 34301a IR 10D4
Contextual Info: Sem iconductors International Rectifier Zener Diodes & Silicon Rectifiers 10 W a ffs a f 95‘C B a s e - 5 % toteran ce co n tin u e d RE F E R E N C E T A B L E Max. D C Zener Current Zener Voltage Type Stock No. 1028.2T5 10Z9.1T5 10Z10T5 10Z11T5 10Z12T5
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11701d11702b10z10t5it703x+1610z11t511704r10z12t511705g10z13t511706e11505adiode zener 1n400210d10 diode11708a30s4 diodeir 10d10 diode30s10 diodediode 10d134301air 10d4
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1N538
Abstract: 1n1085a AMERICAN MICROSEMICONDUCTOR 1N1079 1HV15K 1N1084 Thyr
Contextual Info: American Microsemiconductor manufacturers of Diodes, Transistors, Thyr. 1 of 2 Home Part Number: 1N538 Online Store 1N538 Diodes Silic o n Re c t ifier Transistors Integrated Circuits Optoelectronics
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com/1n5381n5381n1085aamerican microsemiconductor+41n10791hv15k1n1084thyr
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1n4816
Abstract: 1N5054 1N5052 PD2004C 10D10 1n5053
Contextual Info: INTERNATI ONAL RECTIFIER 4855452 SS d ËTJ 4ÖSS4S5 D D D 4 IiOb D 55C 04906 INTERNATIONAL R EC TIFIER Data Sheet No. PD-2.004C INTERNATIONAL RECTIFIER I O R 1N4816,1N5052,1QD, SOD SERIES 1.5 and 2 .0 Amp Molded Silicon Rectifier Diodes Description/Features
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1n48161n50521n4816-221n5052-54+41n5054pd2004c10d101n5053
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1N4822
Abstract: 1N4820 1N5054 IR 20D2 1N4816 10d05 IR 10D4 IR 10D 7 7510D1 1N4817
Contextual Info: INTERNATIONAL RECTIFIER 4855452 SS INTERNATIONAL DE~| 4ÖSS4S5 DDD4clDt. 55C RECTIFIER 04906 D Data Sheet No. PD-2.004C IN T E R N A T IO N A L R E C T IF IE R IÖR <11X14816,1IM5052S10IDSSOD SERIES 1.5 and 8 .0 Amp Molded Silicon R ectifier Diodes Description/Features
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dd04cldb1im48161n48161n5052+111n4816-221n5052-541n48221n48201n5054ir 20d210d05ir 10d4ir 10d 77510d11n4817
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motorola diode cross reference
Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3
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1n58171n58181m5819mbr150+14mbr160mbr190mbr110011dq0311dq04motorola diode cross referencereplacement uf5402ir 30d1diode ir 30d110df2 "cross reference1n4007 "direct replacementdiode ru4air 10d41n5818 "direct replacement
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CS518
Contextual Info: DS26518DK Octal T1/E1/J1 Transceiver Demo Kit Daughter Card www.maxim-ic.com FEATURES GENERAL DESCRIPTION The DS26518DK is an easy-to-use evaluation board for the DS26518 octal T1/E1/J1 transceiver. The DS26518DK is a stand-alone system. The board comes complete with a transceiver, transformers,
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ds26518dkds26518rs-232ds26528+2txena518cs518
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cs1m
Abstract: 11d8 Schottky 16a8 k6n137 rb69 rb60 RECTIFIER rj45 extended vertical socket DS26518 11B8 dat518
Contextual Info: DS26518DK Octal T1/E1/J1 Transceiver Demo Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26518DK is an easy-to-use evaluation board for the DS26518 octal T1/E1/J1 transceiver. The DS26518DK is a stand-alone system. The board comes complete with a transceiver, transformers,
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ds26518dkds26518rs-232ds26528dk02a0+10ds26528cs1m11d8 schottky16a8k6n137rb69rb60 rectifierrj45 extended vertical socket11b8dat518
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11d8 Schottky
Abstract: T1341 RB39 pdata 16a8 RB35 RB59 csr schematic usb to spi rj45 k6n137 RB40
Contextual Info: DS26518DK Octal T1/E1/J1 Transceiver Demo Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26518DK is an easy-to-use evaluation board for the DS26518 octal T1/E1/J1 transceiver. The DS26518DK is a stand-alone system. The board comes complete with a transceiver, transformers,
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ds26518dkds26518rs-232ds26528dk02a0+11ds2652811d8 schottkyt1341rb39pdata16a8rb35rb59csr schematic usb to spi rj45k6n137rb40
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DIODE 20B2
Abstract: CIS10J270NC ELM7S08WS BA41-0071 D5092 28B3 KBC3_SUSPWR RS600ME 218s6ecla21fg K45 S2
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D Table of Contents FIRENZE2-R Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
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533/667mhzrs600mesb600ba41-00714a+15ba41-00715a022nf027nf047nf0033nf018nfdiode 20b2cis10j270ncelm7s08wsba41-0071d509228b3kbc3_suspwr218s6ecla21fgk45 s2
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F10P100
Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Contextual Info: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04
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11eqs03l11eqs02l11eq0311eq04+1611eq0511eq0611eq0911eq1011eqs0311eqs04f10p10010ef112mf30diode f40c60kq10b30mf40f10kf20b12mf40c16p04qc25p40f
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rtl8103
Abstract: mec1308 tps51620 N10M-GE BA41-01100A h3 379 RTL8103EL ALC269 AON6912L adc633
Contextual Info: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D QingDao_ULCPC g n l u a s i t m n a e S fid n o
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ba41-01100aba41-01097aba41-01098artl8103+8mec1308tps51620n10m-geh3 379rtl8103elalc269aon6912ladc633
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SS338A
Abstract: Diode smd BD27 BD2430 cq521 18b2 diode BE513 3b506 HAINAN2 TP2041 B538
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION
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rs600msb600ba41-xxxxxars600+14rev500tp2165tp2123tp2124ss338adiode smd bd27bd2430cq52118b2 diodebe5133b506hainan2tp2041b538
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BA41-00695A
Abstract: TP1274 CONN-50P-FPC Socket AM2 samsung 30 pin lvds diagram 25a44 SMD AC P27 CY28447 samsung electronics ba41 GND103
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
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ba41-00694aba41-00695ayonah667047nf+11rhu002n0612-c4tp1274conn-50p-fpcsocket am2samsung 30 pin lvds diagram25a44smd ac p27cy28447samsung electronics ba41gnd103
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TP2788
Abstract: TP2801 l xd 402 HAINAN3 mx25l8005m2c-15g NH82801HBM timer 8254 circuit LE88CLPM SI2315BDS-T1 20b1 diode
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION
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ba41-00844aba41-00845atp2074tp2075+16tp2076tp2077tp2735tp2736tp2737tp2754tp2788tp2801l xd 402hainan3mx25l8005m2c-15gnh82801hbmtimer 8254 circuitle88clpmsi2315bds-t120b1 diode
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BA41-00808A
Abstract: BA41-00807A samsung schematic ICS95461 TP2136 tp2116 hainan3 HU-1M2012-121JT BA41-00809A 2u42
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents HAINAN3_INT C CPU : Chip Set :
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rs600msb600ba41-00807aba41-00808a+12rs600tp2656rev500tp2660samsung schematicics95461tp2136tp2116hainan3hu-1m2012-121jtba41-00809a2u42
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B30C300
Abstract: 29A4 samsung electronics 10K 34C1 TP678 gfx E3 diode diode 39b2 TP730 NC7SZ175P6X_NL HDR-10P-SMD
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
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ba41-00574ayonah667sheet18sheet19+13047nfrhu002n0612-c4b30c30029a4samsung electronics 10k34c1tp678gfx e3 diodediode 39b2tp730nc7sz175p6x_nlhdr-10p-smd
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ST T4 D560
Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom
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yonah667sheet18sheet19sheet20+16sheet24sheet25sheet29sheet30sheet32sheet33st t4 d560st d560 t4st 1803 dhib-566u574j551246d1ba09-00009asamsung gddr354b4
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16D 22 varistor
Abstract: ERZVA9D270 ERZVA9V220 ERZVA7D680 znr k 330 ERZV14V680 ERZVA9D470 ERZV14V470 ERZV14D470 ERZVA7V330
Contextual Info: ÒZNRÓ Transient/Surge Absorbers, ÒSeries VÓ Type D ÒZNR Ó Transient/Surge Absorbers (Low Voltage Rating) V D Series: Type: ÒZNR Ó Transient/Surge Absorber, Series V is newly released through our continued research in ceramic material composition of ZnO varistor and manufacturing
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erzv05v220cserzv07v220cserzv10v220cserzv14v220cs+16erzv05v270cserzv07v270cserzv10v270cserzv14v270cserzv05v330cserzv07v330cs16d 22 varistorerzva9d270erzva9v220erzva7d680znr k 330erzv14v680erzva9d470erzv14v470erzv14d470erzva7v330
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6A4 mic DIODE
Abstract: r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF XW6800 R8202 R6803 C8207
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 04 426972 ENGINEERING RELEASED DATE
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vr6800vr8290xw6800xw6801+15xw6802xw7100xw7101xw7103xw7200xw73106a4 mic dioder8201ferr-250-ohmc5100 mosfetj8200bs520eofr8202r6803c8207
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2SD618
Abstract: MOTHERBOARD INTEL G31 ICH7 SCHEMATIC DIAGRAM BC615 DIODE 20B2 samsung u252 20b1 diode TP-107-02 SAMSUNG R60 plus S3F94 SLB9635TT1.2
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents SEDONA_plus Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
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yonah667ba41-00697acalistp11574tp11575+15tp11578tp11579tp11516tp11517tp115202sd618motherboard intel g31 ich7 schematic diagrambc615diode 20b2samsung u25220b1 diodetp-107-02samsung r60 pluss3f94slb9635tt1.2
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BA41-00809A
Abstract: HAINAN3_EXT BA41 HAINAN3 BA41-00810A 218s6ecla21fg RS600ME smd diode code ak12 SI2315BDS-T1 B502 samsung p28
Contextual Info: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents HAINAN3_EXT C 1. COVER 2-7. DIAGRAM & ANNOTATION
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rs600sb600ba41-00809aba41-00810a+13tp2123tp2124tp2125tp2062tp2063hainan3_ext ba41hainan3218s6ecla21fgrs600mesmd diode code ak12si2315bds-t1b502samsung p28
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