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10N10 Datasheets (7)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
10N10	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
HM10N10K	VBsemi Electronics Co Ltd	N-Channel 100 V MOSFET with 175 °C junction temperature, RDS(on) 0.140 Ω at VGS = 10 V, continuous drain current up to 13 A, available in TO-252 package, suitable for PWM and primary side switch applications.	Original	PDF
SL10N10A	SLKOR	Trench Power MV MOSFET technology, SOT-223 package, VDS 100V, RDS(ON)@10V,MAX 95mΩ, ID 10A, VGS ±20V, TJ 150°C, TSTG -50 to 155°C, ID Tc=25°C 10A.	Original	PDF
JMTI10N10A	Jiangsu JieJie Microelectronics Co Ltd	N-channel enhancement mode power MOSFET with 100V drain-source voltage, 10A continuous drain current, and RDS(on) less than 110mΩ at VGS=10V, housed in a TO-251-3L package.	Original	PDF
SLP_D10N10T	Maplesemi	N-Channel MOSFET with 100V drain-source voltage, 10A continuous drain current, 105mΩ typical RDS(on) at VGS = 10V, and low gate charge, suitable for power management and switching applications.	Original	PDF
CJU10N10	JCET Group	N-Channel Power MOSFET CJU10N10 with 100V drain-source voltage, 9.6A continuous drain current, 0.115Ω typical on-resistance at 10V gate voltage, low gate charge, and fast switching capability in a TO-252-2L package.	Original	PDF
JMTK10N10A	Jiangsu JieJie Microelectronics Co Ltd	100V, 10A N-channel enhancement mode power MOSFET in TO-252-3L package with RDS(on) less than 108 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency.	Original	PDF

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onsemi NTMFS010N10GTWG 100V MVSOA IN PQFN56 PACKAGE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	NTMFS010N10GTWG	Digi-Reel	1,960		1	1 $3.98 10 $2.60 100 $1.82 1000 $1.50 10000 $1.50	Buy Now
	NTMFS010N10GTWG	Cut Tape	1,960		1	1 $3.98 10 $2.60 100 $1.82 1000 $1.50 10000 $1.50	Buy Now
Avnet Americas	NTMFS010N10GTWG	Tape & Reel		52 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.19	Buy Now
Avnet Silica	NTMFS010N10GTWG			53 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	NTMFS010N10GTWG			25 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micro Commercial Components MCB110N10Y-TP N-CHANNEL MOSFET,D2-PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCB110N10Y-TP	Tape & Reel	1,545			1 - 10 - 100 - 1000 - 10000 -	Buy Now
SLKOR SL10N10A 100V 1 N-CHANNEL 3.1W10ASOT-223-
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SL10N10A	Cut Tape	1,349		1	1 $0.34 10 $0.21 100 $0.13 1000 $0.08 10000 $0.08	Buy Now
STMicroelectronics STF10N105K5 MOSFET N-CH 1050V 6A TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STF10N105K5	Tube	762		1	1 $4.05 10 $4.05 100 $1.86 1000 $1.41 10000 $1.26	Buy Now
Avnet Americas	STF10N105K5	Tube		18 Weeks	1,000	1 - 10 - 100 - 1000 $1.29 10000 $1.22	Buy Now
STMicroelectronics	STF10N105K5		924		1	1 $4.05 10 $2.65 100 $1.98 1000 $1.65 10000 $1.65	Buy Now
ComSIT USA	STF10N105K5		1,750			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	STF10N105K5		150	19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	STF10N105K5			19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Maritex	STF10N105K5		994		1	1 $4.06 10 $3.53 100 $2.54 1000 $2.06 10000 $2.06	Buy Now
Vyrian	STF10N105K5		8,011			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Qnity Laird MGV0302R10N-10 FIXED IND 100NH 10.5A 9 MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MGV0302R10N-10	Cut Tape	760		1	1 $1.15 10 $0.95 100 $0.78 1000 $0.78 10000 $0.78	Buy Now
Avnet Americas	MGV0302R10N-10	Tape & Reel		14 Weeks	6,000	1 - 10 - 100 - 1000 - 10000 $0.60	Buy Now
Avnet Abacus	MGV0302R10N-10	Tape & Reel		32 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Sager	MGV0302R10N-10				5,000	1 - 10 - 100 - 1000 - 10000 $0.58	Buy Now

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10N10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
10N100D Abstract: DSA003705 Contextual Info: Advance Technical Information High Voltage MOSFET N-Channel, Depletion Mode VDSS = 1000 V = 10 A ID25 RDS on = 1.4 Ω IXTH 10N100D IXTT 10N100D TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C	Original	10N100D 10N100D O-247 O-247 O-268 O-268 DSA003705	PDF
10N100 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt	Original	12N100Q ISOPLUS247TM 10N100Q 12N100 10N104 IXFR10N100 IXFR12N100 10N100	PDF
Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs ISOPLUS247™ Q CLASS ix f r DSS D 25 10 A 12N100Q 1000 V IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface t rr < 200 ns D S (on) 1.05 Q 1.20 Q N-Channel Enhancement Mode Avalanche Rated, HighdV/dt	OCR Scan	ISOPLUS247â 12N100Q 10N100Q 12N100 10N100 IXFR10N100	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances	Original	ISOPLUS247TM 12N100Q 10N100Q 12N100S IXFR10N100 IXFR12N100 IXFH12N100Q 728B1	PDF
IRF520 Abstract: IRF120 10n10 circuit diagram irf520 mtp10n10 irf5205 MTP10N08 IRF121 IRF122 IRF123 Contextual Info: — = = ^ - = fl4 D Ë f â 4b*11,74 Q0E?aS 4 □ 3469674 FAIRCHILD SEMICONDUCTOR 84D 2 7 85 4 D IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power M O SFET s, 11 A, 60-100 V F A IR C H IL D A Schlumberger Company Power And Discrete Division Description	OCR Scan	IRF120-123/IRF520-523 MTP10N08/10N10 O-220AB IRF120 IRF121 IRF122 IRF123 IRF520 IRF521 MTP10N08/10N10 IRF520 10n10 circuit diagram irf520 mtp10n10 irf5205 MTP10N08 IRF123	PDF
IXFH12N100Q Abstract: 10N100 6a diode 12N100Q IXFR12N100 Contextual Info: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances	Original	ISOPLUS247TM 12N100Q 10N100Q 12N100 10N100 10N1IS IXFR10N100 IXFH12N100Q 10N100 6a diode IXFR12N100	PDF
ixgh 1500 Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a Contextual Info: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•	OCR Scan	10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a	PDF
13N100 Abstract: 10N100 13n10 Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH / IXFM 10N100 IXFH / IXFM 12N100 IXFH 13N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM	Original	10N100 12N100 13N100 13N100 10N100 13n10	PDF
Contextual Info: □IXYS IXFH 10N100 IXFH 12N100 HiPerFET Power MOSFETs IXFH/FM 10N 100 IXFH/FM 12N100 IXFM 10N100 IXFM 12N100 ^DSS 1000 V 1000 V ^D25 10 A 12 A D DS on 1.20 a 1.05 a K 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol	OCR Scan	10N100 12N100	PDF
10N10 Abstract: P-TO252 SPD10N10 SPU10N10 Contextual Info: SPD 10N10 Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.2 Ω Continuous drain current ID 10 A Enhancement mode • Avalanche rated • dv/dt rated	Original	10N10 SPD10N10 P-TO252 Q67040-S4119 SPU10N10 P-TO251 Q67040-S4111-A2 10N10 P-TO252 SPD10N10 SPU10N10	PDF
10N100F Abstract: 10n100 98934 Contextual Info: VDSS HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM ID25 RDS on 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr ≤ 250 ns (Electrically Isolated Back Surface) 1.05 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt	Original	ISOPLUS247TM 12N100F 10N100F IXFR10N100 IXFR12N100 728B1 10n100 98934	PDF
Contextual Info: MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ID25 RDS on 1000 V 1000 V 10 A 12 A 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V	Original	10N100 12N100 O-247 O-204	PDF
10N100E Contextual Info: MOTOROLA O rder this docum ent by M TW 10N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TW 10N 100E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 10 AMPERES	OCR Scan	10N100E/D 340K-01 10N100E	PDF
XC+872 Contextual Info: SPD 10N10 Inf i ne on technologies Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS 100 V • Enhancement mode Drain-Source on-state resistance ñ DS on1 0.2 Q. • Avalanche rated Continuous drain current	OCR Scan	10N10 11-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T XC+872	PDF

ixth12n100 Abstract: 12n100 3055P Contextual Info: n ix Y S MegaMOS FET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ^D25 1000 V 1000 V 10 A 12 A p DS on 1.20 Q 1.05 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T0 =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 1000	OCR Scan	10N100 12N100 Cto150 O-247AD O-204 O-204 ixth12n100 3055P	PDF
10N100 Abstract: transistor ixth 12N100 N100 transistor N100 Contextual Info: MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ID25 RDS on 1000 V 1000 V 10 A 12 A 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V	Original	10N100 12N100 O-247 O-204 10N100 transistor ixth 12N100 N100 transistor N100	PDF
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt	Original	12N100Q ISOPLUS247TM 10N100Q 12N100 10N100 10N100 IXFR10N100	PDF
10n10 Contextual Info: Preliminary Data SPD 10N10 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.2 Ω Continuous drain current ID 10 A Enhancement mode • Avalanche rated • dv/dt rated	Original	10N10 SPD10N10 SPU10N10 PG-TO252 PG-TO251 Q67040-S4119-A2 Q67040-S4111-A2 10n10	PDF
10N100 Abstract: 12n100 D-68623 IXYS SEMICONDUCTOR IXYS 120 Contextual Info: IXFH 10N100 IXFH 12N100 VDSS HiPerFETTM Power MOSFETs IXFM 10N100 IXFM 12N100 ID25 IXFH/FM 10N100 1000 V 10 A IXFH/FM 12N100 1000 V 12 A RDS on trr 1.20 Ω 1.05 Ω 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH)	Original	10N100 12N100 10N100 12N100 O-247 D-68623 IXYS SEMICONDUCTOR IXYS 120	PDF
10N100 Abstract: 12n100 N100 Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 1000 V 1000 V Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C	Original	10N100 12N100 10N100 12n100 N100	PDF
Contextual Info: □ IXYS Low VCE sal IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 V CES ^C25 V CE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions vw CES T, = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RaE = 1 M£2	OCR Scan	N100U1 N100AU1 O-247 10N100U1 10N100AU1 4bflb22b	PDF
10N100 Contextual Info: DIXYS Low VCE 6al IGBT High speed IGBT 10N100 10N100A V y c es ^C25 v CE (sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Ae Sym bol Test Conditions Maximum Ratings V ces T, = 25“C t o 150°C 1000 V co„ ^ = 25“C to 150“C; RaE = 1 M£2 1000 V VGEs	OCR Scan	IXGH10N100 IXGH10N100A O-247 10N100A 10N100A 10N100 10N100U1 10N100AU1	PDF
MTM40N20 Abstract: MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252 Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•Tc = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15	OCR Scan	O-204AA IRF240 MTM15N20 IRF252Â IRF250Â MTM40N20 MTM5N18 MTM5P18* MTM7N18 MTM8P18* MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252	PDF
10N100 Abstract: N100 12n100 TO204AA Contextual Info: VDSS MegaMOSTMFET ID25 RDS on 1000 V 10 A 1.20 Ω 1000 V 12 A 1.05 Ω IXTH/IXTM 10 N100 IXTH/IXTM 12 N100 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V	Original	10N100 12N100 O-247 O-204 10N100 N100 12n100 TO204AA	PDF

10N10 Search Results

10N10 Datasheets (7)

10N10 Price and Stock

onsemi NTMFS010N10GTWG

Micro Commercial Components MCB110N10Y-TP

SLKOR SL10N10A

STMicroelectronics STF10N105K5

Qnity Laird MGV0302R10N-10

10N10 Datasheets Context Search

10N100D

10N100

IRF520

IXFH12N100Q

ixgh 1500

13N100

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10N100F

10N100E

XC+872

ixth12n100

10N100

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MTM40N20

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