1026 NPN TRANSISTOR Search Results

PU421

Abstract: 1026A PS 1025A PU3113 PU3213 PU4113 PU4213 PU4413 PU4513 6 "transistor arrays" ic
Contextual Info: Power Transistor Arrays P U 3213, P U 4213, P U 4513 PU3213, PU4213, PU4513 P a c k a g e D im e n s io n s PU3213 P o w e r A m p lifier, S w itch in g C o m p le m e n ta ry P a ir with P U 3 1 1 3 , P U 4 1 1 3 , P U 4 4 1 3 • F e a tu re s • • •

FMG6

Abstract: J200M
Contextual Info: ROHM CO LTD h7 MOE D Bl TfiSÖ'm GQ0b324 T B R H H //Transistors . " "• " ~ S w S W 'O FMG6 y~-yj. 9 0 * > / * - * K ^ -T /ty In v e rte r Driver Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor •m • Wf2\fji£!§I/Dimensions U n it: mm

Contextual Info: SIEMENS BCR 505 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kü, R2=10kQ Marking Ordering Code Pin Configuration BCR 505 XWs Q62702-C2354 1= B Package LU It C\J Type 3=C

Contextual Info: FMG6 h "7 > v 7, £ / I ransistors FlU IO ft if $ ^ '> 7 ^ 7 V - t f f ^ T : i 7 Ji ^ - :E - ; i ' K N P N y 'J a > -f — $ K v -f/V ln v e rte r Driver Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor • fl-JK\tD±H/Dimensions Unit : mm 1) X - n - 5 - E - J L KM"-y >y-V T'

LM 3041

Abstract: 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076
Contextual Info: I . I .“~ . MILITARY SEMICONDUCTOR DEVICE, SPECIFICATION TRANSJSIT3R, TYPE NPN, GERMANIUM, POWSR ,. 2N326 This 5Pedification is mandatory for use by all Departments and Agencies of lhe Department of Defense. 1. sCOPE 1.1 transistor. 1 This specilic.l ion cover.

TH3L10

Abstract: c 4235 transistor npn transistor c 4236 TH3L10 datasheet TH5P4 TH3L10 ic 883 transistor 2SC4310 tk3l10 2SA1795
Contextual Info: HIGH VOLTAGE • HIGH SPEED SWITCHING TRANSISTORS HDT series ITO-220 Bipolar transistors NPN Absolute Maximum Ratings VCEO VEBO IC IB PT Tstg TJ VCEO (sus) (min) [V] [V] [V] [A] [A] [W] [˚C] [˚C] [V] 6 3 10 15 4 6 800 7 hFE (min) VCE (sat) (max) VBE (sat)

TRANSISTOR 2n65s

Abstract: 2N65S 2N498 2N657 transistor 2N656 ad 303 transistor 2N856 2N497 2N656 transistor afr 22
Contextual Info: ➤ ✌ ✍✚ —. ‘“”-”” — MIL-s-19500/74E 17 Wtober l’dLi7 SUPSRSED2NT MIL-S-19500/74D 20 March 1964 See 6.3 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, MEDIUM- POWER, TYPES 2N497, 2N498, 2N656, AND 2N657 This specification

2N3442

Abstract: MIL-PRF19500 JANTX 2222 2N3442 JAN transistor d 331 data
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 05 November 1999. INCH-POUND MIL-PRF-19500/370D 05 August 1999 SUPERSEDING MIL-S-19500/370C 25 September 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER

2N2708

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 November 1999 INCH-POUND MIL-PRF-19500/302C 1 August 1999 SUPERSEDING MIL-S-19500/302B 20 January 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,

LT1026

Abstract: LT1026C LT1026CH LT1026I LT1026M LT1026MH LT1054 1026I
Contextual Info: LT1026 Voltage Converter U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ Generates + and – from Single Input Up to ±18V Output Only Needs Four 1µF Capacitors No Inductors 10mA Output Current Minimum Operates Down to 4V No Latchup 8-Pin Minidip The LT 1026 is a switched capacitor voltage doubler and

transistor t06

Abstract: transistor t06 19 T06 transistor
Contextual Info: Philips Semiconductors Product specification PNP switching transistor PMSS3906 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • Switching in e.g. telephony and professional

Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2

rca 40411

Abstract: RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 BD181 rcs258 rca 40363
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ { s a t )—V 'C E X - mA h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 M H z min; P j to 150 W max

LT1026

Abstract: lt1044 LT1026C LT1026CH LT1026CJ8 LT1026I LT1026MH LT1026MJ8 inverter voltage
Contextual Info: LT1026 Voltage Converter U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1026 is a switched capacitor voltage doubler and inverter on a single monolithic die. Capable of operating from a 4V to 10V input, it provides ±7V to ±18V output. Output currents of over 10mA are available. Two charge

1D SOT 23-6

Abstract: SOT-23 m1e MMBTA42LT1G
Contextual Info: MMBTA42LT1, MMBTA43LT1 MMBTA42LT1 is a Preferred Device High Voltage Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish COLLECTOR 3 MAXIMUM RATINGS Rating Symbol MMBTA42

C-48U

Abstract: 2N3739 QML-19500 C48U TO-66 CASE 614
Contextual Info: This documentation process conversion measures necessary to comply with this revision shall be completed by 30 October 1999. INCH-POUND MIL-PRF-19500/402C 30 August 1999 SUPERSEDING MIL-S-19500/402B 8 April 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER

diode cc 3053

Abstract: cc 3053 diode 2N6383 2N6384 2N6385 MIL-PRF19500 K 3053 TRANSISTOR
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 November 1999. INCH-POUND MIL-PRF-19500/523B 10 August 1999 SUPERSEDING MIL-S-19500/523A 21 July 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER

radiator 0,019

Abstract: 2n5578
Contextual Info: •■i ■1 Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d hFE \ / a w~ (CMC1 CEO V CEX V VcE^^- V 'C E X -m A ' ‘c A V CE V Tem p.—°C 25 V CE V •c A 2N5578 FAMILY (n-p-n) High Current, High Power f y = 0.4 MHz min; P y = 300 W max

2n3054

Abstract: 40349
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2

1026A

Abstract: PU4213 PU3113 PU3213 PU4113 PU4413 PU4513 101025 1026 npn transistor
Contextual Info: Power Transistor Arrays PU3213, PU4213, PU4513 Silicon NPN Epitaxial Planar Type P U 3 2 1 3 , P U 4 2 1 3, P U 4 5 1 3 Package Dimensions PU3213 Power Amplifier, Switching Complementary Pair with PU3113, PU4113, PU4413 • Features 0.810.25^ 3fl-“0.5±0.15

2N5302

Abstract: 2N5303 MIL-PRF19500 2n5302 transistor
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 29 October 1999. MIL-PRF-19500/456D 29 July 1999 SUPERSEDING MIL-S-19500/456C 18 November 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER

BFT65

Abstract: transistor bft65 f451 61 SIEMENS 25813
Contextual Info: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration

2N1016B

Abstract: 2N1016D 2N1016C transistor kc 2026 102A MC 3041 2N1016 kc 2026
Contextual Info: MIL SP E C S IC|ODDOiaS OODObTl 4 |~ M IL-S-19500/102A 29 December 1966 ' SUPERSEDING M IL -S-19500/102 NAVY 19 July 1962 (See 6 .2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D This specification is mandatory for u se by a ll Depart­

2N389

Abstract: 2N424 l73a AAZ marking
Contextual Info: i c | 00001B5 HIL SPECS DOOltjfll b | MIL-S-1950 0 /17 3 A 24 November 1964-_ SUPERSEDING MIL-S-19500/1 7 3 NAVY 7 April 1961 MILITARY SPECIFICATION TRANSISTOR, NPN, SILICON TYPES 2N389 AND 2N424 This specification Is mandatory for use by all Departments and