100IIA Search Results

Contextual Info: Ordering number : EN3206 _ F C 1 3 2 No.3286 NPN Epitaxial Planar Silicon Composite Transistor Sw itching Applications with Bias Resistance F e a tu re s • On-chip bias resistances (R1 = lOkii, R2 = 47kC2) • Composite type with 2 transistors contained in the CP package currently in use, improving the

2N4260

Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
Contextual Info: s[^pT e x a s Discrete Semiconductors In s tru m e n ts Polarity High Current NPN Amplifiers Device Type Case Maximum ratings BV BV BV CBO CEO EBO ICM mA V V V hFE1 hFE2 1C fT 1C mA min. min. max. MHz max. mA 250 250 300 1000 1000 1000 20 25 25 — 1000 1000

Contextual Info: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .

Contextual Info: SANYO SEMICONDUCTOR FC107 CORP E2E D 7 cn 7 D 7 b Q0G7372 1 T-Sl-ll # P N P Epitaxial Planar S ilicon C o m p o site Transistor 2066 Switching Applications 3075 with Bias Resistances R1=47ki2, R2=47kO Features • On-chip bias resistors (Ri = 47kfl,R2= 47k£2)

Contextual Info: S A M S UN G SEMICONDUCTOR INC MPS6562 m g q J 7 cj t . 4 m 2 QQ07330 1 PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AUDIO TRANSISTOR • Collector-Emltter Voltage: Vc*0 =25V • Collector Dissipation: Pc max =625mW • Complement to MPS6560 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: UNCONTROLLED DOCUMENT SC:0.25 PART NUMBER REV. SSF-H 233Q G YD PRELIM INARY IN P / N DIR ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 'C PARAMETER lf=2DmA GREEN YELLOW UNITS 565 2.2 585 2.1 nm Vf PEAK WAVELENGTH FORWARD VOLTAGE TYP. TEST COND FORWARD VOLTAGE (MAX.)

Contextual Info: S AM S U N G SEMICONDUCTOR INC MPS6601 14E O | 7^ 4142 0007331 3 | NPN EPITAXIAL SILICON TRANSISTOR ' T-29-21 AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: Vceo=25V • Collector Dissipation: Pc max =625mW A B S O L U T E MAXIMUM RATINGS (Ta=25°C)

transistor marking 551

Abstract: E551 1N MARKING marking code SAL sot-23
Contextual Info: KST13/14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T ^ 2 S V Characteristic Symbol Collector-Base Voltage Collactor-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Small Signal MOSFET

Contextual Info: N-CHANNEL SMALL SIGNAL MOSFET 2N7000 FEATURES TO-92 1 • Fast switching speeds • TO-92 Package ' V ’ i 1. S o u rc e 2. Gate 3. Drain PRODUCT SUMMARY Part Number V ds R d S o ii ta< on ) 2N7000 60V 5.0 n 200 mA MAXIMUM RATINGS Characteristic Drain-Source Voltage (1)

C1684 r .85 transistor

Abstract: 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS 0FT8ELECTB0HICS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS “T h e 4N 35,4N 36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS

1B2 zener diode

Abstract: 1b2 zener 2SC4671
Contextual Info: Ordering number: EN 3483 2SC4671 No.3483 NPN Epitaxial P lan ar Silicon D arlington T ransistor Various Drivers Applications I A p p lic a tio n s . Suitable for use in switching of L load motor drivers, p rin te r ham m er drivers, relay drivers F e a tu re s

MC1400

Abstract: LT1021C-5 SOI series shunt lt1021-5 lt1021 APPLICATION lt 1021-10 LT 1021 lt1021dcn8-5 LTI021-7 LT1021A-10
Contextual Info: LINEAR TECHNOLOGY CORP r r m EOE D • SSlflMbfl GQ03ST1 S ■ _ m g y -iy TEC H N O LO G Y LT1021 Precision R e fe re n c e F€ATUR€S DCSCRIPTIOfl ■ Pin Compatible w ith M ost Bandgap Reference Applications, Including Ref 0 1 , Ref 0 2 , LM 3 6 8 ,

Contextual Info: Philips Semiconductors Product specification 3.3V Octal inverting buffer 3-State 74LVT240 FEATURES DESCRIPTION • Octal bus interface The LVT240 Is a high-performance BiCMOS product designed for V cc operation at 3.3V. • 3-State buffers This device is an octal inverting buffer that is ideal for driving bus

NB013

Abstract: B014-024 cs b013
Contextual Info: NB013,014 NPN , NB023,024(PNP ° NATL S E m C O N D 130 N A T L {DISCRETE! 56 SEMICOND, » E ^ b S D 1 1 3 0 0035501 5 (DISCRETE) 28C 35589 ^National r Æj Semiconductor - ' Z f ' Z D . / ¡ u o n f if m / D w o ! 30m A low noise transistors N B 0 2 3 .0 2 4 (PNP)

mp362

Abstract: MP362A 5VBW
Contextual Info: • 5QE D bQi?H.H4 00033ÔH. T I MICRO POWER SYSTEMS INC â k MICRO POWER MP360 MP361 MP362 SYSTEM S PNP DUAL MONOLITHIC SILICON NITROX’ TRANSISTORS MONOLITHIC MATCHED PAIRS FOR D IFFEREN TIAL AM PLIFIERS HIGH GAIN T'2.9 '27 h F E> 6 0 0 @ 10juA • IjuA

ispgal22lv10a

Contextual Info: is p G A L 2 2 L V 1 0 n-System Programmable Low Voltage E2CMOS® PLD Generic Array Logic >IN-SYSTEM PROGRAMMABLE — IEEE 1149.1 Standard TAP Controller Port Programming — 4-Wire Serial Programming Interface — Minimum 10,000 Program/Erase Cycles

Contextual Info: F£Ö to 199,! HI7131 m HARRIS Ë SE M IC O N D U C TO R Ë Ë Ë Ë Ë 3 1/2 D igit Low Power, High C M R R LCD D isplay Type A /D C onverter February 1993 Features Description • 120dB CMRR Equal to ±0.01 Count/V of Com­ mon Mode Voltage Error • Fast Recovery from Input Overrange Results

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 4 -JU N E 1996 FMMT589 _O _ I • FEATURES * Low equivalent on-resistance; RcE Mt 2 5 0 m ii a t 1A PARTMARKING DETAILS - 589 COMPLEMENTARY TYPE- FMMT489

Contextual Info: SM-8 DUAL NPN M EDIUM POWER HIGH GAIN TRANSISTORS ZDT694 ISSU E 1 - NOVEM BER 1995_ Oll 1 c r c2Πc2U L .1 _U Bi _U Ei ~ n b2 1 1 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL - T694 ABSOLUTE MAXIMUM RATINGS. SY M B O L PARAM ETER VALUE V CBO

Contextual Info: UNCONTROLLED DOCUMENT PA R T N U M B ER REV. S S L—L X 5 0 F T 3 S I C / A A REV, E.C.N . N U M B ER AND R EV ISIO N A E.C.N , #11149 COMMENTS DATE 1 1.0 2.06 05,00 [00.197] ELECTRO-OPTICAL CHARACTERISTICS Ta =25‘C PARAMET[R MIN lf=20mA MAX 63B P[AK WAVELENGTH

IN4804

Abstract: IN4801 IN4807 IN4802 IN4806 1N950 IN4803 IN480 1N4807 1N952
Contextual Info: _ 3 LORAL / F R E Ö U EN C Y / S E M I C O N D _ 96D 00812 D Jlb.HIGH VOLTAGE » • TUNING VAR ACTORS 7 ^ 0 7 ./ 9 SS71L21 OOOO êla T TYPICAL DIODE CAPACITANCE VS REVERSE VOLTAGE 1 N 4 8 0 1 , A , B, C, D through 1N4807, A , B, C, D 1 N 95 0 through 1N952

IN4148

Abstract: IN4148 specifications IN4148 diode specifications IN4148 equivalent
Contextual Info: BURR — BROLJN CORP H E I d I 7 3 i 3 b 5 o o m g g ^ T - s S - o Y " B U R R -B R O W N E g | \ REF200 3 DUAL CURRENT SOURCE o o CM U_ LU DC FEATURES APPLICATIONS • COMPLETELY FLOATING: No Common Connection • HIGH ACCURACY: lOOfiA ±0.5% • LOW TEMPERATURE COEFFICIENT:

UC3879 application notes

Abstract: unitrode u136 Unitrode U-136 Current-doubler rectifier uc3879 Application Note U-136 U136
Contextual Info: y UNITRODE UC1879 UC2879 UC3879 Phase Shift Resonant Controller FEATURES • Programmable Output Turn On Delay; Zero Delay Available • Compatible with Voltage Mode or Current Mode Topologies • Practical Operation at Switching Frequencies to 300kHz • Four 100mA Totem Pole Outputs

SLVS132

Abstract: TPS2814
Contextual Info: TPS2811, TPS2812, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS SLVS132 - OCTOBER 1985 TPS2811, TPS2812, TPS2813. . D, P, AND PW PACKAGES TOP VIEW Industry-Standard Driver Replacement 20-ns Max Rise/Fall Times and 30 ns Max Propagation Delay - 1-nF Load