0D30 Search Results

Contextual Info: ADV MICRO MEMORY MAE D Q257S2Û 0D304Ô4 b IA M D 4 T -4 6 -1 3 -2 9 Advanced Micro Devices Am27C2048 2 Megabit (131,072 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Fast access time -v 100 ns Low power consumption - 25 mA typical CMOS standby current

samsung serdes

Contextual Info: 1 Technical Data Sheet August 2002 FIBEROPTICS DIVISION TR137FA-0D30S 622Mbps 1310nm Small Form Factor Pluggable SFP LC Duplex Single Mode Transceiver Features Links of 15km with 9/125µm single mode fiber 1.3µm InGaAsP MQW FP laser Highly sensitive InGaAs PIN Photodiode

Contextual Info: N AUER PHI LIP S/ DIS CR ETE bRE D • bbS3R31 0D30727 33R « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

Contextual Info: N AUER PH ILI PS/ DI SC RE TE bTE » • bbS3T31 0D30b^5 T H P ro d uc t S p ecificatio n P hilips S em ico nd uc tors BUK456-1000B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

transistor IRF520

Abstract: IRF520 mos die 312c IRF52
Contextual Info: 3QE D 7 T 2 C 237 0D30130 5 • Q S-THOMSON SGS-THOMSON IRF520 CHIP Ey N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 9 5 x9 5 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:

Contextual Info: ANALOG DEVICES INC bSE D ö l b ö D G 0D30fl7a TT1 D 32-Bit IEEE Floating-Point DSP Microprocessor ANALOG ► DEVICES FEATURES Superscalar IEEE Floating-Point Processor Off-Chip Harvard Architecture Maximizes Signal Processing Performance 80 ns, 12.5 MIPS Instruction Rate, Single-Cycle

UB8830D

Abstract: u125d UB8820M ub 8820 u880 UL7211D ub 8840 MC 4011 BCP U806D UB8840M
Contextual Info: in n flkän X □ n i Typenübersicht TkinOBOM 0D30p Fertigungsprogram m n pOH3BOACTBeHHaa nporpaMMa Das vorliegende H eft soll dem Zweck dienen, U e/ibto npeflCTaB/ieHHOM npocneKTa-TeipaAn AB/iaeTcs» einen Überblick über das Erzeugnissortim enten H a lb ­

k455

Abstract: BUK455 BUK455-200A BUK455-200B T0220AB
Contextual Info: bTE D N AMER PHI LIP S/ DI SC R ET E • 0D30b50 Ô3D H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: 3QE » • 7 ^ 2 C 2 3 7 0D30734 H ■ ^ p 3 > °M £ fZ J SCS-THOMSON Ä 7# [M ^ m ie T T IM O tg S IR FK 4 H250 'T js S-THÖMSÖN N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE IR FK4H 250 V dss Ros on) Id 200 V 0 .02 1 Q 108 A . ■ . ■

Contextual Info: N AMER PHILIPS/DISCRETE bRE D bb53R31 0D30S10 273 « A P X Product Specification Philips Semiconductors BUK442-1OOA/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

OE57S

Abstract: BD847 BDP282 Am79C82 AMD AM3 Processor Functional DD30 NP10 CC03X amd am3 pin latches BD23
Contextual Info: ADV MI CR O T E L E C O M 4ÖE D 0257527 0D30Ö05 fl • AMD3 P R E L IM IN A R Y Advanced Micro Devices Am79C830 FORMAC Plus DISTINCTIVE CHARACTERISTICS ■ Implements the FDDI Media Access Control (MAC) layer protocol for ISO standard 9314-2 Pointers to claim and beacon frames

BUK444

Abstract: 3BS transistor BUK444-800A BUK444-800B buk444 800
Contextual Info: N AMER PHILIPS/DISCRETE blE D • ^53^31 0D305^ Philips Semiconductors Product Specification PowerMOS transìstor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

16C256

Abstract: KM416C256DJ
Contextual Info: KM4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: TOSHIBA TC74VHC4040F/FN/FS/FT TOSHIBA C M O S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC4040F, TC74VHC4040FN, TC74VHC4040FS, TC74VHC4040FT 12-STAGE RIPPLE-CARRY BINARY COUNTER The TC74VHC4040 is an advanced high speed CMOS 12 STAGE BINARY COUNTER / DIVIDER fabricated with

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson BU RR -BR O W N «! I OPA644 1 DEMO BOARD AVAILABLE See Appendix A Low Distortion Current Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • SLEW RATE: 2500V/|is The OPA644 is a wideband precision current feed­

nec V850e2m manual

Abstract: v850E2M architecture v850e2 architecture
Contextual Info: Cover User’s Manual 32 V850E2/PG4-L User’s Manual: Hardware Renesas microcomputers V850 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

ty 612

Abstract: PJ 3139
Contextual Info: PMC-Sierra, Inc. ADVANCE PM5313 SPECTRA-622 DATA SHEET PMC-981162 ISSUE 2 SONET/SDH PAYLOAD EXTRACTOR/ALIGNER FOR 622 MBIT/S PM5313 SPECTRA-622 SONET/SDH PAYLOAD EXTRACTOR/ALIGNER FOR 622 MBIT/S DATA SHEET PROPRIETARY AND CONFIDENTIAL ADVANCE ISSUE 2: MAY 1999

SI 1150H

Abstract: xnxx 1155H 16 x E1 G.703 MP 9720 ds yt 1208 diode 1N311
Contextual Info: PM5313 SPECTRA-622 SONET/SDH PAYLOAD EXTRACTOR/ALIGNER FOR 622 MBIT/S DATA SHEET PRELIMINARY ISSUE 3: OCTOBER 1999 Proprietary and Confidential to PMC-Sierra Inc., and for its Customers’ Internal Use REVISION HISTORY Issue No. Issue Date Details of Change

1N07

Abstract: relay cross reference z570 1062H
Contextual Info: PMC-Sierra, Inc. PRELIMINARY PM5313 SPECTRA-622 DATA SHEET PMC-1981162 ISSUE 4 SONET/SDH PAYLOAD EXTRACTOR/ALIGNER FOR 622 MBIT/S PM5313 SPECTRA-622 SONET/SDH PAYLOAD EXTRACTOR/ALIGNER FOR 622 MBIT/S DATA SHEET PRELIMINARY ISSUE 4: FEBRUARY 2000 Proprietary and Confidential to PMC-Sierra Inc., and for its Customers’ Internal Use

Zl11

Abstract: A12C
Contextual Info: ADV MI CRO MEMORY 4ÔE » 0E5755Ö GÜ3 D4 b ö ö • AÎ1DM T—46—13-29 Advanced Micro Devices Am27C020 2 Megabit (262,144 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ 100% Flashrlte programming -typical programming time of 30 seconds Fast access time

HARRIS 82C54

Abstract: CS82C54-10 P82C54
Contextual Info: HARRIS SEMICOND SECTOR MbE D • M302E71 DD3flb'fll 3 « H A S R O C ' R A H A R R I S S E M I C O N D U C T O R i / i f a T - 3 Z .- 3 3 - 0 5 February CM OS Programmable Interval Timer 1992 Features Description • 10MHz or 8MHz Clock Input Frequency The Harris 82C54 is a high performance C M O S Programma­

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

Contextual Info: TMS320DM6467T www.ti.com SPRS605C – JULY 2009 – REVISED JUNE 2012 TMS320DM6467T Digital Media System-on-Chip Check for Samples: TMS320DM6467T 1 Digital Media System-on-Chip DMSoC 1.1 Features 12 • High-Performance Digital Media SoC – 1-GHz C64x+ Clock Rate