0D30B Search Results
0D30B Price and Stock
Microchip Technology Inc APT30D30BGDIODE STD 300V 30A TO247 [B] |
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APT30D30BG | Tube | 190 | 1 |
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APT30D30BG | Bulk | 20 Weeks | 190 |
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APT30D30BG | Bulk | 190 |
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APT30D30BG | Tube | 20 Weeks |
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APT30D30BG | Tube | 129 |
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Microchip Technology Inc APT30D30BCTGDIODE ARRAY GP 300V 30A TO247 |
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APT30D30BCTG | Tube | 75 | 1 |
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APT30D30BCTG | Bulk | 20 Weeks | 110 |
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APT30D30BCTG | Bulk | 110 |
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APT30D30BCTG | Tube | 20 Weeks |
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APT30D30BCTG | Tube | 75 |
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APT30D30BCTG | 22 Weeks | 110 |
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APT30D30BCTG | 21 Weeks | 110 |
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Mersen Electrical Power STZ240D30BQZB QB 300kA 240V DELTA |
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Mersen Electrical Power STZ480D30BXZB T1 300kA 480V DELTA N4X |
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Mersen Electrical Power STZ240D30BRZB RB 300kA 240V DELTA |
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0D30B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: N AUER PH ILI PS/ DI SC RE TE bTE » • bbS3T31 0D30b^5 T H P ro d uc t S p ecificatio n P hilips S em ico nd uc tors BUK456-1000B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in |
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bbS3T31 0D30b BUK456-1000B O220AB BUK456-1000IB bbS3T31 | |
k455
Abstract: BUK455 BUK455-200A BUK455-200B T0220AB
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0D30b50 K455-200A/B T0220AB BUK455 -200A -200B -ID/100 k455 BUK455-200A BUK455-200B T0220AB | |
HARRIS 82C54
Abstract: CS82C54-10 P82C54
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M302E71 82C54 16-bit 82C54) 10MHz 82C54-10) 80C86, 80C88, HARRIS 82C54 CS82C54-10 P82C54 | |
g030blContextual Info: ADV MICRO MEMORY MÖE » DE5752Ö a 0 3 D b l D 7 • AMDM T—46—13—25 Advanced Micro Devices A m 27X1024 1 Megabit <65,536 x 16-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ■ ■ As an OTP EPROM alternative: - Factory optimized programming |
OCR Scan |
DE5752Ã 27X1024 16-Bit) KS000010 0205-005A Am27X1024 g030bl | |
AM28F256Contextual Info: ADV MICRO MEMORY 4ÖE T> □2S7SEÖ GD30bSS 7 IAMD4 Preliminary Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time Low power consumption - 30 mA maximum active current |
OCR Scan |
GD30bSS Am28F256 32-pin -32-pin Am28F256-95C4JC Am28F256-95C3JC | |
5-530825-2
Abstract: 4-530396-4 4-530396-3
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Centerlines-70 Centerlines-50 E28476 Standa90 0030LfiS 5-530825-2 4-530396-4 4-530396-3 | |
645405-1Contextual Info: j . H J H f c lw H Q l Card Edge Connectors f i ' û ! ' 1/ / Board-to-Board, W ire-to-Board &Î Catalog 82619 Revised 8-96 Standard Edge II Connectors Product Facts Standard Edge II Connectors • Maximum number of dual positions .100 [2.54] Centerlines-70 |
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Centerlines-70 Centerlines-50 E28476 Standa90 0030LfiS 645405-1 | |
030b4T
Abstract: C1204B
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KM416V1004BJ 16Bit 1Mx16 7Rb4142 03Qb5 030b4T C1204B | |
1NA114Contextual Info: Or, Call Castomer Service at 1-800-548-6132 USA Only B U R R -B R O W N s E INA114 1 FEATURES DESCRIPTION • LOW OFFSET VOLTAGE: 50|iV max The IN A 114 is a low cost, general purpose instrumen tation am plifier offering excellent accuracy. Its versa |
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INA114 115dB SOL-16 23ki2 49kSl 17313L5 17313LS GG30bftb 1NA114 | |
1-645235-6
Abstract: 5558 op amp
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Centerlines-70 Centerlines-50 E28476 0030LfiS 1-645235-6 5558 op amp | |
3055 7FContextual Info: j . H J H f c lw H Q l Card Edge Connectors f i ' û ! ' 1/ / Board-to-Board, W ire-to-Board &Î Catalog 82619 Revised 8-96 Standard Edge II Connectors Product Facts Standard Edge II Connectors • M axim um num ber of dual positions .10 0 [2 .5 4 ] Centerlines-70 |
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Centerlines-70 Centerlines-50 E28476 0030LfiS 3055 7F | |
Contextual Info: j . H J H f c lw H Q l Card Edge Connectors f i ' û ! ' 1/ / Board-to-Board, W ire-to-Board &Î Catalog 82619 Revised 8-96 Standard Edge II Connectors Product Facts Standard Edge II Connectors • Maximum number of dual positions .100 [2.54] Centerlines-70 |
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Centerlines-70 Centerlines-50 E28476 0030LfiS | |
SGS40TA045Contextual Info: 3QE » m 7 eJ2cî 5 3 7 0030b4fi Q • rZZ SCS-THOMSON “ 7# ^DOæULllOïïiOOaflûS t-w s i S G S 4 0 T A 045 S G S- TH O M SO N NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS . LOW Rth JUNCTION TO CASE . ADAPTED FOR HIGH POWER SWITCHING |
OCR Scan |
0030b4fi T0-240) T-91-20 O-240) PC-029« SGS40TA045 | |
qml-38535
Abstract: CDFP2-F14 CQCC1-N20 GDFP1-F14
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0030t qml-38535 CDFP2-F14 CQCC1-N20 GDFP1-F14 | |
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C1000B
Abstract: I22S stt 300
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KM416V 16Bit 1Mx16 HMH01EJHBSH0IHBII KM416V1000BT) C1000B I22S stt 300 | |
rise time of phototransistor
Abstract: IR phototransistor OPB827 OPB828 OPB828A OPB828B OPB828C OPB828D OPB829 time curves
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OPB828 OPB828A, OPB828B, OPB828C, OPB828D OPB828A OPB828B OPB828C OPB828D rise time of phototransistor IR phototransistor OPB827 OPB829 time curves | |
Contextual Info: N AUER PHILIPS/DISCRETE b^E D bbS3R31 ODBDhOO EOS H A P X Product Specification Philips Semiconductors BUK453-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in |
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bbS3R31 BUK453-60A/B O220AB BUK453 0030b04 | |
Contextual Info: N AHER PHILIPS/DISCRETE bTE D ^53=531 0030b7D Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies |
OCR Scan |
0030b7D -TO220AB BUK456-60A/B BUK456 | |
1016F
Abstract: INA103AG burr brown package 211 AD625 INA103 INA103BG INA103KP 100I4 burr-brown 700
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100MHz 110dB AD625 INA103 17313LS 0D30b33 1016F INA103AG burr brown package 211 AD625 INA103BG INA103KP 100I4 burr-brown 700 | |
AD9005
Abstract: AD9005ALM AD9005KM AD9005TM 46-PIN
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12-Bit, AD9005A 12-Bit MIL-STD-883-Compliant MSBID11 74HC374 AD9713 AD9005 AD9005ALM AD9005KM AD9005TM 46-PIN |