0D30B Search Results
0D30B Price and Stock
Microchip Technology Inc APT30D30BGUltrafast Soft Recovery Rectifier Diode 300V 30A 2-Pin TO-247 - Rail/Tube (Alt: APT30D30BG) |
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APT30D30BG | Tube | 20 Weeks | 190 |
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APT30D30BG | Bulk | 250 |
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APT30D30BG | Tube | 534 | 20 Weeks |
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APT30D30BG | 8,867 |
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Torex Semiconductor LTD XC6220D30BER-GLDO Voltage Regulator, Fixed, 1.6 V to 6 V, 1 Output, 3.05V, Positive Output, 1A, 60mV - Tape and Reel (Alt: XC6220D30BER-G) |
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XC6220D30BER-G | Tape & Reel | 16 Weeks | 3,000 |
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Torex Semiconductor LTD XC6220D30BMR-GLDO Voltage Regulator, Fixed, 1.6 V to 6 V, 1 Output, 3.05V, Positive Output, 1A, 60mV - Tape and Reel (Alt: XC6220D30BMR-G) |
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XC6220D30BMR-G | Tape & Reel | 16 Weeks | 3,000 |
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Torex Semiconductor LTD XC6220D30BPR-GLDO Voltage Regulator, Fixed, 1.6 V to 6 V, 1 Output, 3.05V, Positive Output, 1A, 60mV - Tape and Reel (Alt: XC6220D30BPR-G) |
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XC6220D30BPR-G | Tape & Reel | 16 Weeks | 1,000 |
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Mean Well NPF-120D-30BE- Boxed Product (Development Kits) (Alt: NPF-120D-30BE) |
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NPF-120D-30BE | Box | 19 Weeks, 3 Days | 1 |
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NPF-120D-30BE |
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NPF-120D-30BE | 1 | 1 |
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NPF-120D-30BE |
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0D30B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: N AUER PH ILI PS/ DI SC RE TE bTE » • bbS3T31 0D30b^5 T H P ro d uc t S p ecificatio n P hilips S em ico nd uc tors BUK456-1000B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in |
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bbs3t310d30bbuk456-1000bo220ab+1 | |
k455
Abstract: BUK455 BUK455-200A BUK455-200B T0220AB
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0d30b50k455-200a/bt0220abbuk455+6 | |
HARRIS 82C54
Abstract: CS82C54-10 P82C54
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m302e7182c5416-bit10mhz+6 | |
g030blContextual Info: ADV MICRO MEMORY MÖE » DE5752Ö a 0 3 D b l D 7 • AMDM T—46—13—25 Advanced Micro Devices A m 27X1024 1 Megabit <65,536 x 16-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ■ ■ As an OTP EPROM alternative: - Factory optimized programming |
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de575227x102416-bitks000010+3 | |
AM28F256Contextual Info: ADV MICRO MEMORY 4ÖE T> □2S7SEÖ GD30bSS 7 IAMD4 Preliminary Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time Low power consumption - 30 mA maximum active current |
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gd30bssam28f25632-pin-32-pin+2 | |
5-530825-2
Abstract: 4-530396-4 4-530396-3
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centerlines-70centerlines-50e28476standa90+4 | |
645405-1Contextual Info: j . H J H f c lw H Q l Card Edge Connectors f i ' û ! ' 1/ / Board-to-Board, W ire-to-Board &Î Catalog 82619 Revised 8-96 Standard Edge II Connectors Product Facts Standard Edge II Connectors • Maximum number of dual positions .100 [2.54] Centerlines-70 |
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centerlines-70centerlines-50e28476standa90+2 | |
030b4T
Abstract: C1204B
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km416v1004bj16bit1mx167rb4142+3 | |
1NA114Contextual Info: Or, Call Castomer Service at 1-800-548-6132 USA Only B U R R -B R O W N s E INA114 1 FEATURES DESCRIPTION • LOW OFFSET VOLTAGE: 50|iV max The IN A 114 is a low cost, general purpose instrumen tation am plifier offering excellent accuracy. Its versa |
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ina114115dbsol-1623ki2+5 | |
1-645235-6
Abstract: 5558 op amp
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centerlines-70centerlines-50e284760030lfis+2 | |
3055 7FContextual Info: j . H J H f c lw H Q l Card Edge Connectors f i ' û ! ' 1/ / Board-to-Board, W ire-to-Board &Î Catalog 82619 Revised 8-96 Standard Edge II Connectors Product Facts Standard Edge II Connectors • M axim um num ber of dual positions .10 0 [2 .5 4 ] Centerlines-70 |
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centerlines-70centerlines-50e284760030lfis+1 | |
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Contextual Info: j . H J H f c lw H Q l Card Edge Connectors f i ' û ! ' 1/ / Board-to-Board, W ire-to-Board &Î Catalog 82619 Revised 8-96 Standard Edge II Connectors Product Facts Standard Edge II Connectors • Maximum number of dual positions .100 [2.54] Centerlines-70 |
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centerlines-70centerlines-50e284760030lfis | |
SGS40TA045Contextual Info: 3QE » m 7 eJ2cî 5 3 7 0030b4fi Q • rZZ SCS-THOMSON “ 7# ^DOæULllOïïiOOaflûS t-w s i S G S 4 0 T A 045 S G S- TH O M SO N NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS . LOW Rth JUNCTION TO CASE . ADAPTED FOR HIGH POWER SWITCHING |
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0030b4fit0-240t-91-20o-240+2 | |
qml-38535
Abstract: CDFP2-F14 CQCC1-N20 GDFP1-F14
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0030tqml-38535cdfp2-f14cqcc1-n20+1 | |
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C1000B
Abstract: I22S stt 300
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km416v16bit1mx16hmh01ejhbsh0ihbii+4 | |
rise time of phototransistor
Abstract: IR phototransistor OPB827 OPB828 OPB828A OPB828B OPB828C OPB828D OPB829 time curves
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opb828opb828aopb828bopb828c+6 | |
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Contextual Info: N AUER PHILIPS/DISCRETE b^E D bbS3R31 ODBDhOO EOS H A P X Product Specification Philips Semiconductors BUK453-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in |
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bbs3r31buk453-60a/bo220abbuk453+1 | |
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Contextual Info: N AHER PHILIPS/DISCRETE bTE D ^53=531 0030b7D Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies |
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0030b7d-to220abbuk456-60a/bbuk456 | |
1016F
Abstract: INA103AG burr brown package 211 AD625 INA103 INA103BG INA103KP 100I4 burr-brown 700
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100mhz110dbad625ina103+9 | |
AD9005
Abstract: AD9005ALM AD9005KM AD9005TM 46-PIN
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12-bitad9005amil-std-883-compliantmsbid11+7 | |