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    0D30B Search Results

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    0D30B Price and Stock

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    Microchip Technology Inc APT30D30BG

    DIODE STD 300V 30A TO247 [B]
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    DigiKey APT30D30BG Tube 190 1
    • 1 $2.95
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    Avnet Americas APT30D30BG Bulk 20 Weeks 190
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    Mouser Electronics APT30D30BG
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    Newark APT30D30BG Bulk 190
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    Microchip Technology Inc APT30D30BG Tube 20 Weeks
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    TME APT30D30BG 1
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    NAC APT30D30BG Tube 129
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    Master Electronics APT30D30BG
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    Microchip Technology Inc APT30D30BCTG

    DIODE ARRAY GP 300V 30A TO247
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    DigiKey APT30D30BCTG Tube 75 1
    • 1 $5.12
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    Avnet Americas APT30D30BCTG Bulk 20 Weeks 110
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    Mouser Electronics APT30D30BCTG
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    Newark APT30D30BCTG Bulk 110
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    Microchip Technology Inc APT30D30BCTG Tube 20 Weeks
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    TME APT30D30BCTG 1
    • 1 $7.42
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    NAC APT30D30BCTG Tube 75
    • 1 $4.90
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    Avnet Silica APT30D30BCTG 22 Weeks 110
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    EBV Elektronik APT30D30BCTG 21 Weeks 110
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    Master Electronics APT30D30BCTG
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    Mersen Electrical Power STZ240D30BQ

    ZB QB 300kA 240V DELTA
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    DigiKey STZ240D30BQ Bulk 1
    • 1 $4196.89
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    Mouser Electronics STZ240D30BQ
    • 1 $6103.46
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    Mersen Electrical Power STZ480D30BX

    ZB T1 300kA 480V DELTA N4X
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    DigiKey STZ480D30BX Bulk 1
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    Mouser Electronics STZ480D30BX
    • 1 $7037.08
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    Mersen Electrical Power STZ240D30BR

    ZB RB 300kA 240V DELTA
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    DigiKey STZ240D30BR Bulk 1
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    Mouser Electronics STZ240D30BR
    • 1 $6323.18
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    0D30B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: N AUER PH ILI PS/ DI SC RE TE bTE » • bbS3T31 0D30b^5 T H P ro d uc t S p ecificatio n P hilips S em ico nd uc tors BUK456-1000B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    bbS3T31 0D30b BUK456-1000B O220AB BUK456-1000IB bbS3T31 PDF

    k455

    Abstract: BUK455 BUK455-200A BUK455-200B T0220AB
    Contextual Info: bTE D N AMER PHI LIP S/ DI SC R ET E • 0D30b50 Ô3D H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    0D30b50 K455-200A/B T0220AB BUK455 -200A -200B -ID/100 k455 BUK455-200A BUK455-200B T0220AB PDF

    HARRIS 82C54

    Abstract: CS82C54-10 P82C54
    Contextual Info: HARRIS SEMICOND SECTOR MbE D • M302E71 DD3flb'fll 3 « H A S R O C ' R A H A R R I S S E M I C O N D U C T O R i / i f a T - 3 Z .- 3 3 - 0 5 February CM OS Programmable Interval Timer 1992 Features Description • 10MHz or 8MHz Clock Input Frequency The Harris 82C54 is a high performance C M O S Programma­


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    M302E71 82C54 16-bit 82C54) 10MHz 82C54-10) 80C86, 80C88, HARRIS 82C54 CS82C54-10 P82C54 PDF

    g030bl

    Contextual Info: ADV MICRO MEMORY MÖE » DE5752Ö a 0 3 D b l D 7 • AMDM T—46—13—25 Advanced Micro Devices A m 27X1024 1 Megabit <65,536 x 16-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ■ ■ As an OTP EPROM alternative: - Factory optimized programming


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    DE5752Ã 27X1024 16-Bit) KS000010 0205-005A Am27X1024 g030bl PDF

    AM28F256

    Contextual Info: ADV MICRO MEMORY 4ÖE T> □2S7SEÖ GD30bSS 7 IAMD4 Preliminary Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time Low power consumption - 30 mA maximum active current


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    GD30bSS Am28F256 32-pin -32-pin Am28F256-95C4JC Am28F256-95C3JC PDF

    5-530825-2

    Abstract: 4-530396-4 4-530396-3
    Contextual Info: j . H J H f c lw H Q l Card Edge Connectors f i ' û ! ' 1/ / Board-to-Board, W ire-to-Board &Î Catalog 82619 Revised 8-96 Standard Edge II Connectors Product Facts Standard Edge II Connectors • Maximum number of dual positions .100 [2.54] Centerlines-70


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    Centerlines-70 Centerlines-50 E28476 Standa90 0030LfiS 5-530825-2 4-530396-4 4-530396-3 PDF

    645405-1

    Contextual Info: j . H J H f c lw H Q l Card Edge Connectors f i ' û ! ' 1/ / Board-to-Board, W ire-to-Board &Î Catalog 82619 Revised 8-96 Standard Edge II Connectors Product Facts Standard Edge II Connectors • Maximum number of dual positions .100 [2.54] Centerlines-70


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    Centerlines-70 Centerlines-50 E28476 Standa90 0030LfiS 645405-1 PDF

    030b4T

    Abstract: C1204B
    Contextual Info: KM416V1004BJ ELECTRONICS CMOS D R A M 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    KM416V1004BJ 16Bit 1Mx16 7Rb4142 03Qb5 030b4T C1204B PDF

    1NA114

    Contextual Info: Or, Call Castomer Service at 1-800-548-6132 USA Only B U R R -B R O W N s E INA114 1 FEATURES DESCRIPTION • LOW OFFSET VOLTAGE: 50|iV max The IN A 114 is a low cost, general purpose instrumen­ tation am plifier offering excellent accuracy. Its versa­


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    INA114 115dB SOL-16 23ki2 49kSl 17313L5 17313LS GG30bftb 1NA114 PDF

    1-645235-6

    Abstract: 5558 op amp
    Contextual Info: j . H J H f c lw H Q l Card Edge Connectors f i ' û ! ' 1/ / Board-to-Board, W ire-to-Board &Î Catalog 82619 Revised 8-96 Standard Edge II Connectors Product Facts Standard Edge II Connectors • Maximum number of dual positions .100 [2.54] Centerlines-70


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    Centerlines-70 Centerlines-50 E28476 0030LfiS 1-645235-6 5558 op amp PDF

    3055 7F

    Contextual Info: j . H J H f c lw H Q l Card Edge Connectors f i ' û ! ' 1/ / Board-to-Board, W ire-to-Board &Î Catalog 82619 Revised 8-96 Standard Edge II Connectors Product Facts Standard Edge II Connectors • M axim um num ber of dual positions .10 0 [2 .5 4 ] Centerlines-70


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    Centerlines-70 Centerlines-50 E28476 0030LfiS 3055 7F PDF

    Contextual Info: j . H J H f c lw H Q l Card Edge Connectors f i ' û ! ' 1/ / Board-to-Board, W ire-to-Board &Î Catalog 82619 Revised 8-96 Standard Edge II Connectors Product Facts Standard Edge II Connectors • Maximum number of dual positions .100 [2.54] Centerlines-70


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    Centerlines-70 Centerlines-50 E28476 0030LfiS PDF

    SGS40TA045

    Contextual Info: 3QE » m 7 eJ2cî 5 3 7 0030b4fi Q • rZZ SCS-THOMSON “ 7# ^DOæULllOïïiOOaflûS t-w s i S G S 4 0 T A 045 S G S- TH O M SO N NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE . ADAPTED FOR HIGH POWER SWITCHING


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    0030b4fi T0-240) T-91-20 O-240) PC-029« SGS40TA045 PDF

    qml-38535

    Abstract: CDFP2-F14 CQCC1-N20 GDFP1-F14
    Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 REV STATUS OF SHEETS PMIC N/A REV 1 SHEET 2 3 4 5 6 7 8 9 10 11 12 13 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE


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    0030t qml-38535 CDFP2-F14 CQCC1-N20 GDFP1-F14 PDF

    C1000B

    Abstract: I22S stt 300
    Contextual Info: K M 4 1 6 V l O O O BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CM OS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


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    KM416V 16Bit 1Mx16 HMH01EJHBSH0IHBII KM416V1000BT) C1000B I22S stt 300 PDF

    rise time of phototransistor

    Abstract: IR phototransistor OPB827 OPB828 OPB828A OPB828B OPB828C OPB828D OPB829 time curves
    Contextual Info: 0 .O P IE K Product Bulletin OPB828 July 1996 Slotted Optical Switches Types OPB828A, OPB828B, OPB828C, OPB828D .955 24.26 , I .760 (19.30) .7^C (18.80) , J (6.60) > (6. 10) t «•—' )I '—• e .-*95 [12-37 '-WHIT£ DOT INDICATES COLLECTOA •dt Features


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    OPB828 OPB828A, OPB828B, OPB828C, OPB828D OPB828A OPB828B OPB828C OPB828D rise time of phototransistor IR phototransistor OPB827 OPB829 time curves PDF

    Contextual Info: N AUER PHILIPS/DISCRETE b^E D bbS3R31 ODBDhOO EOS H A P X Product Specification Philips Semiconductors BUK453-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


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    bbS3R31 BUK453-60A/B O220AB BUK453 0030b04 PDF

    Contextual Info: N AHER PHILIPS/DISCRETE bTE D ^53=531 0030b7D Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    0030b7D -TO220AB BUK456-60A/B BUK456 PDF

    1016F

    Abstract: INA103AG burr brown package 211 AD625 INA103 INA103BG INA103KP 100I4 burr-brown 700
    Contextual Info: Or, Cdll Customer Service at 1-800-548-6132 USA Only APPLICATIONS • LO W THD+N: 0.0009% at 1kHz, G = 100 • HIGH Q UALITY M IC RO PH O N E P R E A M P S (R E P L A C E S T R A N S F O R M E R S ) • HIGH G B W : 100MHz at G = 1000 • MOVING-COIL P R E A M P L IF IE R S


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    100MHz 110dB AD625 INA103 17313LS 0D30b33 1016F INA103AG burr brown package 211 AD625 INA103BG INA103KP 100I4 burr-brown 700 PDF

    AD9005

    Abstract: AD9005ALM AD9005KM AD9005TM 46-PIN
    Contextual Info: ANALOG DEVICES INC 42E D • OfllbaOG 0 Q 3 G b b 0 S ■ ANA T - 5 I - / 0 - / Z □ A N A LO G D E V IC E S FEATURES Complete 12-Bit A/D Converter Includes Track and Hold, Reference, and Timing Bipolar Analog Input ±1.024 V Up to 10 M S P S Sampling Rate


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    12-Bit, AD9005A 12-Bit MIL-STD-883-Compliant MSBID11 74HC374 AD9713 AD9005 AD9005ALM AD9005KM AD9005TM 46-PIN PDF